DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data BVCEO > 100V Case: SOT363 IC = 1A high Continuous Collector Current ICM = 3A Peak Pulse Current Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 RCE(sat) = 200m for a Low Equivalent On-Resistance Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage VCE(sat) < 200mV @ 1A Complementary PNP Type Available (DSS9110Y) Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 e3 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Weight: 0.006 grams (approximate) C SOT-363 C C E C C B B E Top View Device Symbol Pin-Out Top Ordering Information (Note 4) Product DSS8110Y-7 Notes: Marking ZN5 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. ZN5 Date Code Key Year Code Month Code YM Marking Information ZN5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) 2010 X 2011 Y 2012 Z 2013 A 2014 B 2015 C 2016 D 2017 E 2018 F 2019 G 2020 H 2021 I Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DSS8110Y Document number: DS31679 Rev. 3 - 2 1 of 7 www.diodes.com July 2014 (c) Diodes Incorporated DSS8110Y Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Peak Pulse Collector Current Base Current - Continuous Thermal Characteristics Symbol VCBO VCEO VEBO IC ICM IB Value 120 100 5 1 3 0.3 Unit V V V A A A Value 625 200 81 -55 to +150 Unit mW C/W C/W C (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Lead (Note 6) Operating and Storage Temperature Range Symbol PD RJA RJL TJ, TSTG ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point (at the end of collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DSS8110Y Document number: DS31679 Rev. 3 - 2 2 of 7 www.diodes.com July 2014 (c) Diodes Incorporated DSS8110Y Thermal Characteristics and Derating Information 10 0.7 Pw = 100s IC, COLLECTOR CURRENT (A) PD, POWER DISSIPATION (W) 0.6 0.5 0.4 0.3 0.2 0.1 0 1 DC Pw = 100ms 0.1 Pw = 10ms Pw = 1ms 0.01 RJA = 200C/W 0.001 0.1 0 50 100 150 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Dissipation vs. Ambient Temperature 1 10 100 1,000 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 RJA(t) = r(t) * RJA RJA = 180C/W D = 0.05 D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DSS8110Y Document number: DS31679 Rev. 3 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 3 Transient Thermal Response 3 of 7 www.diodes.com 10 100 1,000 July 2014 (c) Diodes Incorporated DSS8110Y Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol Min Typ Max Unit BVCBO BVCEO BVEBO 120 100 5 100 50 100 100 V V V nA A nA nA 150 150 100 80 500 V 40 120 200 mV 200 1.05 0.9 m V V VCE = 10V, IC = 1mA VCE = 10V, IC = 250mA VCE = 10V, IC = 500mA VCE = 10V, IC = 1A IC = 100mA, IB = 10mA IC = 500mA, IB = 50mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 1A, IB = 100mA VCE = 10V, IC = 1A 7.5 pF MHz VCB = 10V, f = 1.0MHz VCE = 10V, IC = 50mA, f = 100MHz Collector Cutoff Current ICBO Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 8) ICES IEBO DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat) Collector-Emitter Saturation Resistance Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product RCE(sat) VBE(sat) VBE(on) Cobo fT 100 Notes: Test Condition IC = 100A, IE = 0 IC = 10mA, IB = 0 IE = 100A, IC = 0 VCB = 80V, IE = 0 VCB = 80V, IE = 0, TA = 150C VCE = 80V, VBE = 0 VEB = 4V, IC = 0 8. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. DSS8110Y Document number: DS31679 Rev. 3 - 2 4 of 7 www.diodes.com July 2014 (c) Diodes Incorporated DSS8110Y 500 1.0 400 IB = 5mA hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) 1.2 0.8 IB = 4mA 0.6 IB = 3mA IB = 2mA 0.4 0.2 0 IC/IB = 10 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) T A = 25C 200 T A = -55C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 5 Typical DC Current Gain vs. Collector Current VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 1 0.1 TA = 150C TA = 85C TA = 25C T A = -55C 0.01 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) T A = 85C 0 0.001 2 4 6 8 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage TA = 125C T A = 125C 300 100 IB = 1mA 0 T A = 150C 1.2 VCE = 10V 1.0 0.8 TA = -55C 0.6 T A = 25C 0.4 T A = 85C TA = 125C 0.2 TA = 150C 0 0.0001 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current 1.2 IC/IB = 10 1.0 0.8 T A = -55C 0.6 TA = 25C 0.4 TA = 85C TA = 125C 0.2 0 0.1 TA = 150C 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current DSS8110Y Document number: DS31679 Rev. 3 - 2 5 of 7 www.diodes.com July 2014 (c) Diodes Incorporated DSS8110Y Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0 8 All Dimensions in mm B C H K M J D F L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 C1 G Y X DSS8110Y Document number: DS31679 Rev. 3 - 2 6 of 7 www.diodes.com July 2014 (c) Diodes Incorporated DSS8110Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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