DSS8110Y
Document number: DS31679 Rev. 3 - 2
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DSS8110Y
100V NPN LOW SATURATION TRANSISTOR IN SOT363
Features
BVCEO > 100V
I
C = 1A high Continuous Collector Current
I
CM = 3A Peak Pulse Current
R
CE(sat) = 200m for a Low Equivalent On-Resistance
Low Saturation Voltage VCE(sat) < 200mV @ 1A
Complementary PNP Type Available (DSS9110Y)
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads. Solderable per
MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DSS8110Y-7 ZN5 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green”
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021
Code X Y Z A B C D E F G H I
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Device Symbol Pin-Out Top
SOT-363
ZN5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
ZN5
YM
CCE
CCB
C
B
E
e3
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 1 A
Peak Pulse Collector Current ICM 3 A
Base Current – Continuous IB 0.3 A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 625 mW
Thermal Resistance, Junction to Ambient (Note 5) R
JA 200 °C/W
Thermal Resistance, Junction to Lead (Note 6) R
JL 81 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (at the end of collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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Document number: DS31679 Rev. 3 - 2
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Thermal Characteristics and Derating Information
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 50 100 150 200
T , AMBIENT TEMPERATURE ( C)
A
Fig. 1 Power Dissipation vs. Ambient Temperature
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (W)
D
R = 200°C/W
JA
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1,000
0.001
0.01
0.1
1
10
I,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(
A
)
C
Pw = 100ms
Pw = 10ms
Pw = 1ms
DC
Pw = 100µs
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 3 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
R (t) = r(t) *
JA
R
R = 180°C/W
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1
DSS8110Y
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Collector-Base Breakdown Voltage BVCBO 120 V IC = 100µA, IE = 0
Collector-Emitter Breakdown Voltage BVCEO 100 V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 5 V IE = 100µA, IC = 0
Collector Cutoff Current ICBO 

100
50
nA
µA
VCB = 80V, IE = 0
VCB = 80V, IE = 0, TA = 150°C
Collector Cutoff Current ICES 100 nA
VCE = 80V, VBE = 0
Emitter Cutoff Current IEBO 100 nA
VEB = 4V, IC = 0
ON CHARACTERISTICS (Note 8)
DC Current Gain hFE
150
150
100
80



500
V
VCE = 10V, IC = 1mA
VCE = 10V, IC = 250mA
VCE = 10V, IC = 500mA
VCE = 10V, IC = 1A
Collector-Emitter Saturation Voltage VCE(sat)


40
120
200
mV
IC = 100mA, IB = 10mA
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
Collector-Emitter Saturation Resistance RCE
(
sat
)
  200 m IC = 1A, IB = 100mA
Base-Emitter Saturation Voltage VBE
(
sat
)
1.05 V
IC = 1A, IB = 100mA
Base-Emitter Turn On Voltage VBE
(
on
)
0.9 V
VCE = 10V, IC = 1A
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo 7.5 pF
VCB = 10V, f = 1.0MHz
Current Gain-Bandwidth Product fT 100 MHz VCE = 10V, IC = 50mA, f = 100MHz
Notes: 8. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
DSS8110Y
Document number: DS31679 Rev. 3 - 2
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0
0.2
0.4
0.6
0.8
1.0
1.2
0246810
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
0
100
200
300
400
500
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
h , DC CURRENT GAIN
FE
0.01
0.1
1
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.0001
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION
CE(SAT)
VOLTAGE (V)
T = -55°C
A
I/I = 10
CB
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.0001
0
0.2
0.4
0.6
0.8
1.2
V , BASE-EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
1.0
V = 10V
CE
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.1 1 10 100 1,000
0
0.2
0.4
0.6
0.8
1.0
V, B
A
SE-E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E (V)
BE(SAT)
1.2
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
I = 10
CB
/I
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
DSS8110Y
Document number: DS31679 Rev. 3 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT363
Dim Min Max Typ
A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11
 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.5
G 1.3
X 0.42
Y 0.6
C1 1.9
C2 0.65
A
M
JL
D
B C
H
K
F
X
Z
Y
C1
C2
C2
G
DSS8110Y
Document number: DS31679 Rev. 3 - 2
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DSS8110Y
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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