STPS120M (R) POWER SCHOTTKY RECTIFIER Table 1: Main Product Characteristics IF(AV) 1A VRRM 20 V Tj (max) 150C VF(max) 0.41 V A C FEATURES AND BENEFITS Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop for higher efficiency and extented battery life Low thermal resistance Avalanche capability specified DESCRIPTION STmite (DO216-AA) Table 2: Order Code Part Number STPS120M Marking 120 Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in STmite, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the small size of the package this device fits battery powered equipment (cellular, notebook, PDA's, printers) as well chargers and PCMCIA cards. Table 3: Absolute Ratings (limiting values) Symbol Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward voltage Value 20 Unit V 2 A IF(AV) Average forward current Tc = 140C = 0.5 1 A IFSM Surge non repetitive forward current tp = 8.3 ms sinusoidal 50 A PARM Repetitive peak avalanche power tp = 1s Tj = 25C Tstg Tj dV/dt Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage (rated VR, Tj = 25C) 1400 W -65 to + 150 C 150 C 10000 V/s 1 dPtot * : --------------- > -------------------------- thermal runaway condition for a diode on its own heatsink dTj Rth ( j - a ) September 2004 REV. 3 1/6 STPS120M Table 4: Thermal Resistance Symbol Parameter Value Unit Rth(j-c)* Junction to case 20 C/W Rth(j-l)* 250 C/W Junction to ambient * Mounted with minimum recommended pad size, PC board FR4. Table 5: Static Electrical Characteristics Symbol Parameter Tests conditions Tj = 25C Tj = 100C IR * Reverse leakage current Tj = 25C Min. VR = VRRM VR = 10V Tj = 100C Tj = 25C VR = 5V Tj = 100C Tj = 25C VF * Tj = 100C Forward voltage drop Tj = 25C Tj = 100C IF = 1A IF = 3A Typ Max. 1.3 3.9 275 850 0.6 2.0 145 450 0.4 1.0 105 300 0.44 0.49 0.36 0.41 0.48 0.54 0.42 0.48 Unit A V * tp = 380 s, < 2% Pulse test: 2 To evaluate the conduction losses use the following equation: P = 0.34 x IF(AV) + 0.07 IF (RMS) Figure 1: Conduction losses versus average current Figure 2: Average forward current versus ambient temperature ( = 0.5) PF(AV)(W) IF(AV)(A) 0.6 1.2 = 0.2 = 0.1 1.1 = 0.5 0.5 Rth(j-a)=Rth(j-c) 1.0 = 0.05 0.9 0.4 0.8 =1 0.7 0.3 Rth(j-a)=270C/W 0.6 0.5 0.4 0.2 0.3 T T 0.2 0.1 IF(AV)(A) =tp/T 0.0 0.0 2/6 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 tp =tp/T 0.0 1.1 1.2 0 Tamb(C) tp 25 50 75 100 125 150 STPS120M Figure 3: Normalized avalanche derating versus pulse duration power Figure 4: Normalized avalanche derating versus junction temperature PARM(tp) PARM(1s) power PARM(tp) PARM(25C) 1 1.2 1 0.1 0.8 0.6 0.4 0.01 0.2 Tj(C) tp(s) 0.001 0.01 0.1 1 0 10 100 25 1000 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) 50 75 100 125 150 Figure 6: Relative variation of thermal impedance junction to ambient versus pulse duration IM(A) Zth(j-c)/Rth(j-c) 22 1.0 20 0.9 18 0.8 16 0.7 14 0.6 TC=25C 12 = 0.5 0.5 10 TC=75C 0.4 8 0.3 6 TC=125C 4 0.2 IM 2 t 0.1 t(s) =0.5 0 1.E-03 1.E-02 1.E-01 1.E+00 Figure 7: Reverse leakage current versus reverse voltage applied (typical values) = 0.2 T = 0.1 Single pulse 0.0 1.E-04 tp(s) 1.E-03 =tp/T 1.E-02 tp 1.E-01 Figure 8: Junction capacitance versus reverse voltage applied (typical values) IR(mA) C(pF) 1.E+01 1000 F=1MHz VOSC=30mVRMS Tj=25C Tj=150C 1.E+00 Tj=125C 1.E-01 Tj=100C 100 1.E-02 Tj=75C Tj=50C 1.E-03 Tj=25C VR(V) VR(V) 10 1.E-04 0 2 4 6 8 10 12 14 16 18 20 1 10 100 3/6 STPS120M Figure 9: Forward voltage drop versus forward current (low level) Figure 10: Forward voltage drop versus forward current (high level) IFM(A) IFM(A) 100.0 2.0 1.8 1.6 Tj=100C (maximum values) Tj=100C (maximum values) 1.4 10.0 1.2 Tj=100C (typical values) 1.0 Tj=100C (typical values) 0.8 Tj=25C (maximum values) 1.0 0.6 Tj=25C (maximum values) 0.4 0.2 VFM(V) VFM(V) 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Figure 11: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu = 35m, typical values) Rth(j-a)(C/W) 300 250 200 150 100 50 S(cm) 0 0.0 4/6 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 STPS120M Figure 12: STmite Package Mechanical Data DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. A 0.85 1.00 1.15 0.033 0.039 A1 -0.05 0.05 -0.002 b 0.40 0.65 0.016 b2 0.70 1.00 0.027 c 0.10 0.25 0.004 D 1.75 1.90 2.05 0.069 0.007 E 1.75 1.90 2.05 0.069 0.007 H 3.60 3.75 3.90 0.142 0.148 L 0.50 0.63 0.80 0.020 0.025 L2 1.20 1.35 1.50 0.047 0.053 L3 0.50 0.019 ref ref R 0.07 0.003 R1 0.07 0.003 L3 D b2 b H L2 L E R C A A1 0 to 6 R1 Max. 0.045 0.002 0.025 0.039 0.010 0.081 0.081 0.154 0.031 0.059 Figure 13: Foot Print Dimensions (in millimeters) 1.82 1.38 2.03 0.75 1.10 0.50 0.71 Table 6: Ordering Information Ordering type STPS120M Marking 120 Package STmite Weight 15.5 mg Base qty 12000 Delivery mode Tape & reel Table 7: Revision History Date Revision Jul-2003 2A 13-Sep-2004 3 Description of Changes Last update. STmite package dimensions reference A1 change: from blank (min) to -0.05mm and from 0.10 (max) to 0.05mm. 5/6 STPS120M Information furnished is believed to be accurate and reliable. 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