®
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Table 1: Main Product Characteristics
IF(AV) 1 A
VRRM 20 V
Tj (max) 150°C
VF(max) 0.41 V
STPS120M
POWER SCHOTTKY RECTIFIER
REV. 3
Table 3: Absolute Ratings (limiting values)
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 20 V
IF(RMS) RMS forward voltage 2 A
IF(AV) Average forward current Tc = 140°C δ = 0.5 1A
IFSM Surge non repetitive forward current tp = 8.3 ms sinusoidal 50 A
PARM Repetitive peak avalanche power tp = 1µs Tj = 25°C 1400 W
Tstg Storage temperature range -65 to + 150 °C
TjMaximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage (rated VR, Tj = 25°C) 10000 V/µs
* : thermal runaway condition for a diode on its own heatsink
dPtot
dTj
--------------- 1
Rth j a
–()
-------------------------->
C
A
STmite
(DO216-AA)
September 2004
FEATURES AND BENEFITS
■Very small conduction losses
■Negligible switching losses
■Extremely fast switching
■Low forward voltage drop for higher efficiency
and extented battery life
■Low thermal resistance
■Avalanche capability specified
DESCRIPTION
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.
Table 2: Order Code
Part Number Marking
STPS120M 120
STPS120M
2/6
Table 4: Thermal Resistance
* Mounted with minimum recommended pad size, PC board FR4.
Table 5: Static Electrical Characteristics
Pulse test: * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.34 x IF(AV) + 0.07 IF2(RMS)
Symbol Parameter Value Unit
Rth(j-c)*Junction to case 20 °C/W
Rth(j-l)* Junction to ambient 250 °C/W
Symbol Parameter Tests conditions Min. Typ Max. Unit
IR * Reverse leakage current
Tj = 25°C VR = VRRM
1.3 3.9
µA
Tj = 100°C 275 850
Tj = 25°C VR = 10V 0.6 2.0
Tj = 100°C 145 450
Tj = 25°C VR = 5V 0.4 1.0
Tj = 100°C 105 300
VF * Forward voltage drop
Tj = 25°C IF = 1A 0.44 0.49
V
Tj = 100°C 0.36 0.41
Tj = 25°C IF = 3A 0.48 0.54
Tj = 100°C 0.42 0.48
Figure 1: Conduction losses versus average
current
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
P (W)
F(AV)
δ= 1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
δ= 0.05
δ= 0.2 δ= 0.5
δ= 0.1
T
δ
=tp/T tp
I (A)
F(AV)
I (A)
F(AV)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0 25 50 75 100 125 150
T
δ
=tp/T tp T (°C)
amb
R=R
th(j-a) th(j-c)
R =270°C/W
th(j-a)
STPS120M
3/6
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values)
Figure 6: Relative variation of thermal
impedance junction to ambient versus pulse
duration
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values)
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t)
P (1µs)
ARM p
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125 150
T (°C)
j
P(t)
P (25°C)
ARM p
ARM
0
2
4
6
8
10
12
14
16
18
20
22
1.E-03 1.E-02 1.E-01 1.E+00
I
M
t
δ=0.5
I (A)
M
t(s)
T =25°C
C
T =75°C
C
T =125°C
C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01
T
δ
=tp/T tp
δ= 0.5
δ= 0.2
δ= 0.1
Single pulse
Z/R
th(j-c) th(j-c)
t (s)
p
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
02468101214161820
I (mA)
R
V (V)
R
T =125°C
j
T =150°C
j
T =100°C
j
T =50°C
j
T =25°C
j
T =75°C
j
10
100
1000
110100
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
STPS120M
4/6
Figure 9: Forward voltage drop versus forward
current (low level)
Figure 10: Forward voltage drop versus
forward current (high level)
Figure 11: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy printed board FR4, Cu = 35µm, typical
values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
I (A)
FM
V (V)
FM
T =25°C
(maximum values)
j
T =100°C
(maximum values)
j
T =100°C
(typical values)
j
0.1
1.0
10.0
100.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I (A)
FM
V (V)
FM
T =25°C
(maximum values)
j
T =100°C
(maximum values)
j
T =100°C
(typical values)
j
R (°C/W)
th(j-a)
0
50
100
150
200
250
300
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
S(cm²)
STPS120M
5/6
Figure 12: STmite Package Mechanical Data
Figure 13: Foot Print Dimensions (in millimeters)
C
L2
L
A1
R1
R
0° to 6°
b
H
b2
D
L3
A
E
1.82
2.03 1.10
0.50
1.38
0.75
0.71
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 0.85 1.00 1.15 0.033 0.039 0.045
A1 -0.05 0.05 -0.002 0.002
b 0.40 0.65 0.016 0.025
b2 0.70 1.00 0.027 0.039
c 0.10 0.25 0.004 0.010
D 1.75 1.90 2.05 0.069 0.007 0.081
E 1.75 1.90 2.05 0.069 0.007 0.081
H 3.60 3.75 3.90 0.142 0.148 0.154
L 0.50 0.63 0.80 0.020 0.025 0.031
L2 1.20 1.35 1.50 0.047 0.053 0.059
L3 0.50
ref
0.019
ref
R 0.07 0.003
R1 0.07 0.003
Table 6: Ordering Information
Ordering type Marking Package Weight Base qty Delivery mode
STPS120M 120 STmite 15.5 mg 12000 Tape & reel
Table 7: Revision History
Date Revision Description of Changes
Jul-2003 2A Last update.
13-Sep-2004 3 STmite package dimensions reference A1 change: from
blank (min) to -0.05mm and from 0.10 (max) to 0.05mm.
STPS120M
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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