SD453N/R SERIES
FAST RECOVERY DIODES Stud Version
400A
450A
Bulletin I2076/A
Features
High power FAST recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 2500V
High current capability
Optimized turn on and turn off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 150°C
Typical Applications
Snubber diode for GTO
High voltage free-wheeling diode
Fast recovery rectifier applications
IF(AV) 400 450 A
@ TC70 70 °C
IF(RMS) 630 710 A
IFSM @ 50Hz 9300 9600 A
@ 60Hz 9730 10050 A
VRRM range 1200 to 2500 1200 to 2500 V
trr 2.0 3.0 µs
@ TJ25 25 °C
TJ- 40 to 150 °C
Parameters Units
SD453N/R
S20 S30
Major Ratings and Characteristics
case style
B-8
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SD453N/R Series
Voltage VRRM , maximum repetitive VRSM , maximum non- IRRM max.
Type number Code peak reverse voltage repetitive peak rev. voltage @ TJ = TJ max.
V V mA
12 1200 1300
16 1600 1700
20 2000 2100
25 2500 2600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD453N/R 50
SD453N/R
S20 S30
IF(AV) Max. average forward current 400 450 A180° conduction, half sine wave
@ case temperature 70 70 °C
IF(RMS) Max. RMS forward current 630 710 A
@ case temperature 55 52 °C
IFSM Max. peak, one-cycle forward, 9300 9600 t = 10ms No voltage
non-repetitive surge current 9730 10050 t = 8.3ms reapplied
7820 8070 t = 10ms100% VRRM
8190 8450 t = 8.3ms reapplied Sinusoidal half wave,
I2tMaximum I2t for fusing 432 460 t = 10ms No voltage Initial TJ = TJ max.
395 420 t = 8.3ms reapplied
306 326 t = 10ms 100% VRRM
279 297 t = 8.3ms reapplied
I2√tMaximum I2√t for fusing 4320 4600 KA2√st = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
voltage
VF(TO)2 High level value of threshold
voltage
rf1Low level value of forward
slope resistance
rf2High level value of forward
slope resistance
VFM Max. forward voltage drop 2.20 1.85 VIpk= 1500A, TJ = TJ max, tp = 10ms sinusoidal wave
Parameter Units Conditions
Forward Conduction
A
KA2s
1.09 1.04 (I > π x IF(AV)),TJ = TJ max.
1.00 0.95 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
0.74 0.54 (I > π x IF(AV)),TJ = TJ max.
0.80 0.60 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
mΩ
V
typical trr Ipk di/dt Vrtrr Qrr Irr
@ 25% IRRM Square Pulse @ 25% IRRM
Code
(µs) (A) (A/µs) (V) (µs) (µC) (A)
Test conditions Max. values @ TJ = 150 °C
Recovery Characteristics
TJ = 25 oC
S20 2.0 1000 50 - 50 3.5 250 120
S30 3.0 1000 50 - 50 5.0 380 150
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SD453N/R Series
D-649
Fig. 6 - Forward Power Loss CharacteristicsFig. 5 - Forward Power Loss Characteristics
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
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SD453N/R Series
D-650
Fig. 9 - Maximum Non-repetitive Surge Current Fig. 10 - Maximum Non-repetitive Surge Current
Fig.12 - Maximum Non-repetitive Surge CurrentFig.11 - Maximum Non-repetitive Surge Current
Fig. 8 - Forward Power Loss CharacteristicsFig. 7 - Forward Power Loss Characteristics
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SD453N/R Series
D-651
Fig. 15 - Thermal Impedance ZthJC Characteristic
Fig. 16 - Typical Forward Recovery Characteristics Fig. 17 - Typical Forward Recovery Characteristics
Fig. 14 - Forward Voltage Drop CharacteristicsFig. 13 - Forward Voltage Drop Characteristics
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SD453N/R Series
D-652
Fig. 25 - Frequency Characteristics
Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 23 - Recovery Current CharacteristicsFig. 22 - Recovery Charge CharacteristicsFig. 21 - Recovery Time Characteristics
Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics Fig. 20 - Recovery Current Characteristics
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SD453N/R Series
D-653
Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 31 - Frequency Characteristics
Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 29 - Frequency Characteristics
Fig. 26 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 27 - Frequency Characteristics
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SD453N/R Series
TJMax. junction operating temperature range -40 to 150
Tstg Max. storage temperature range -40 to 150
RthJC Max. thermal resistance, junction to case 0.1 DC operation
RthCS Max. thermal resistance, case Mounting surface, smooth, flat and
to heatsink greased
TMounting torque, ± 10% 50 Nm Not lubricated threads
wt Approximate weight 454 g
Case style B - 8 See Outline Table
°C
0.04
Parameter Units Conditions
K/W
Thermal and Mechanical Specifications SD453N/R
S20 S30
180° 0.010 0.010 0.008 0.008 TJ = TJ max.
120° 0.014 0.014 0.014 0.014
90° 0.017 0.017 0.019 0.019 K/W
60° 0.025 0.025 0.026 0.026
30° 0.042 0.042 0.042 0.042
Conduction angle Units Conditions
S20 S30 S20 S30
∆RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
Ordering Information Table
SD 45 3 N25 S30 P S C
1 2 34 5 6 7
Device Code
89
1-Diode
2-Essential part number
3-3=Fast recovery
4-N=Stud Normal Polarity (Cathode to Stud)
R=Stud Reverse Polarity (Anode to Stud)
5-Voltage code: Code x 100 = VRRM (see Voltage Ratings table)
6-trr code (see Recovery Characteristics table)
7-P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 X 1.5
8-7S=Isolated lead with silicone sleeve
(Red = Reverse Polarity; Blue = Normal Polarity)
None = Not isolated lead
T=Threaded Top Terminal 3/8" 24UNF-2A
9-C=Ceramic housing
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SD453N/R Series
Outlines Table
Case Style B-8
All dimensions in millimeters (inches)
Case Style B-8 with top thread terminal 3/8"
All dimensions in millimeters (inches)
26 (1.023) MAX.
10.5 (0.41) DIA.
12 (0.47) MIN.
38 (1.5)
DIA. MAX.
CERAMIC HOUSING
SW 45
C.S. 70mm
5(0.20) ± 0.3(0.01)
2
3/4"-16UNF-2A *
* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.
38 (1.5)
DIA. MAX.
CERAMIC HOUSING
SW 45
3/4"-16UNF-2A *
3/8"-24UNF-2A
17 (0.67) DIA.
* FOR METRIC DEVICE: M24 x 1.5 - SCREW LENGTH — 21(0.83) MAX.
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