2009-08-18Page 1
Rev. 2.1BSP324
SIPMOS Power-Transistor Product Summary
VDS 400 V
RDS
(
on
)
25 Ω
ID0.17 A
Feature
•N-Channel
• Enhancement mode
• Logic Level
•dv/dtrated SOT-223
Marking
BSP324
Type Package Pb-free Tape and Reel Information
BSP324 PG-SOT223 Yes L6327: 1000 pcs/reel
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
TA=70°C
ID
0.17
0.14
A
Pulsed drain current
TA=25°C
ID puls 0.68
Reverse diode dv/dt
IS=0.17A, VDS=320V, di/dt=200A/µs, Tjmax=175°C
dv/dt6kV/µs
Gate source voltage VGS ±20 V
ESD Class (JESD22-A114-HBM) 1A (>250V, <500V)
Power dissipation
TA=25°C
Ptot 1.8 W
Operating and storage temperature Tj,Tstg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
•Pb-free lead plating; RoHS compliant
xQualified according to AEC Q101
Non dry
Packaging
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2009-08-18Page 2
Rev. 2.1
BSP324
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
RthJS -16 25 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
85
45
115
70
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=250µA
V(BR)DSS 400 - - V
Gate threshold voltage, VGS = VDS
ID=94µA
VGS(th) 1.3 1.9 2.3
Zero gate voltage drain current
VDS=400V, VGS=0, Tj=25°C
VDS=400V, VGS=0, Tj=125°C
IDSS
-
-
0.01
-
0.1
10
µA
Gate-source leakage current
VGS=20V, VDS=0
IGSS -10 100 nA
Drain-source on-state resistance
VGS=4.5V, ID=0.05A
RDS(on) -14.3 22 Ω
Drain-source on-state resistance
VGS=10V, ID=0.17A
RDS(on) -13.6 25
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
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2009-08-18Page 3
Rev. 2.1
BSP324
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=0.14A
0.09 0.19 - S
Input capacitance Ciss VGS=0, VDS=25V,
f=1MHz
-103 154 pF
Output capacitance Coss -9.2 13.6
Reverse transfer capacitance Crss -3.8 5.7
Turn-on delay time td(on) VDD=225V, VGS=10V,
ID=0.17A, RG=6Ω
-4.6 6.9 ns
Rise time t
r
-4.4 6.6
Turn-off delay time td(off) -17 25
Fall time t
f
-68 102
Gate Charge Characteristics
Gate to source charge Qgs VDD=320V, ID=0.17A -0.35 0.45 nC
Gate to drain charge Q
g
d-2.17 2.82
Gate charge total QgVDD=320V, ID=0.17A,
VGS=0 to 10V
-4.54 5.9
Gate plateau voltage V
(p
lateau
)
VDD=320V, ID=0.17A -3.6 - V
Reverse Diode
Inverse diode continuous
forward current
ISTA=25°C - - 0.17 A
Inv. diode direct current, pulsed ISM - - 0.68
Inverse diode forward voltage VS
D
VGS=0, IF=0.17A -0.8 1.2 V
Reverse recovery time trr VR=200V, IF=lS,
diF/dt=100A/µs
-85 127 ns
Reverse recovery charge Qr
r
-104 156 nC
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2009-08-18Page 4
Rev. 2.1
BSP324
1 Power dissipation
Ptot = f(TA)
020 40 60 80 100 120 °C 160
TA
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
W
1.9 BSP324
Ptot
2 Drain current
ID=f(TA)
parameter: VGS≥ 10 V
020 40 60 80 100 120 °C 160
TA
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
A
0.18
BSP324
ID
3 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TA = 25 °C
10 010 110 210 3
V
VDS
-3
10
-2
10
-1
10
0
10
1
10
A
BSP324
ID
RDS(on) = VDS / ID
DC
10 ms
1 ms
t
p = 170.0µs
4 Transient thermal impedance
ZthJA = f(tp)
parameter : D=tp/T
10 -5 10 -4 10 -3 10 -2 10 -1 10 010 110 210 4
s
tp
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP324
ZthJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
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2009-08-18Page 5
Rev. 2.1
BSP324
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj= 25 °C, VGS
012345678 10
0
0.1
0.2
0.3
0.4
0.6
10V
7V
6V
5V
4.5V
4.3V
4.1V
3.9V
3.7V
6 Typ. drain-source on resistance
RDS(on) = f(ID)
parameter: Tj = 25 °C, VGS
00.05 0.1 0.15 0.2 0.25 A0.35
ID
0
2
4
6
8
10
12
14
16
18
Ω
22
RDS(on)
3.7V
3.9V
4.1V
4.3V
4.5V
5V
6V
7V
10V
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0 1 2 3 V5
VGS
0
0.05
0.1
0.15
0.2
0.25
A
0.35
ID
8 Typ. forward transconductance
gfs = f(ID
)
parameter: Tj = 25 °C
00.05 0.1 0.15 0.2 0.25 A0.35
ID
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
S
0.36
gfs
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2009-08-18Page 6
Rev. 2.1
BSP324
9 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 0.17 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
10
20
30
40
50
60
70
80
90
100
110
Ω
130 BSP324
RDS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS;ID =94µA
-60 -20 20 60 100 °C 160
Tj
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
V
2.6
- VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f(VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
0 5 10 15 20 V30
VDS
0
10
1
10
2
10
3
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
IF = f (VSD
)
parameter: Tj
00.4 0.8 1.2 1.6 22.4 V3
V
SD
-3
10
-2
10
-1
10
0
10
A
BSP324
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
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2009-08-18Page 7
Rev. 2.1
BSP324
13 Typ. gate charge
VGS =f (QG); parameter: VDS ,
ID = 0.17 A pulsed, Tj = 25 °C
0 1 2 3 4 5 nC 7
QG
0
2
4
6
8
10
12
V
16 BSP324
VGS
0.2 VDS max
0.5 VDS max
0.8 VDS max
14 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
360
370
380
390
400
410
420
430
440
450
460
470
V
490 BSP324
V(BR)DSS
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2009-08-18Page 8
BSP324
Rev 2.1
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