G3SBA20, G3SBA60 & G3SBA80
Vishay General Semiconductor
Document Number: 88606
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for monitor, TV, printer, switching mode
power supply, adapter, audio equipment, and home
appliances applications.
MECHANICAL DATA
Case: GBU
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
PRIMARY CHARACTERISTICS
IF(AV) 4.0 A
VRRM 200 V, 600 V, 800 V
IFSM 80 A
IR 5 µA
VF1.0 V
TJ max. 150 °C
Case Style GBU
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL G3SBA20 G3SBA60 G3SBA80 UNIT
Maximum repetive peak reverse voltage VRRM 200 600 800 V
Maximum RMS voltage VRWM 140 420 560 V
Maximum DC blocking voltage VDC 200 600 800 V
Maximum average forward rectified
output current at
TC = 100 °C (1)
TA = 25 °C (2) IF(AV)
4.0
2.3 A
Peak forward surge current single sine-wave
superimposed on rated load IFSM 80 A
Rating for fusing (t < 8.3 ms) I2t27A
2s
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
G3SBA20, G3SBA60 & G3SBA80
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88606
Revision: 15-Dec-08
2
Notes:
(1) Unit case mounted on aluminum plate heatsink
(2) Units mounted on P.C.B with 0.5 x 0.5" (12 x 12 mm) copper pads and 0.375" (9.5 mm) lead length
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL G3SBA20 G3SBA60 G3SBA80 UNIT
Maximum instantaneous forward voltage per diode 2.0 A VF1.00 V
Maximum DC reverse current at rated DC
blocking voltage per diode
TJ = 25 °C
TJ = 125 °C IR
5.0
400 µA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL G3SBA20 G3SBA60 G3SBA80 UNIT
Typical thermal resistance RθJA (2)
RθJC (1)
26
5.0 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
G3SBA60-E3/45 3.404 45 20 Tube
G3SBA60-E3/51 3.404 51 250 Paper tray
Figure 1. Derating Curve Output Rectified Current
0
1
2
3
4
7550250 100 125 150
Average Forward Output Current (A)
Temperature (°C)
Heatsink Mounting, TC
P.C.B. Mounting, TA
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
0
20
40
60
80
100
1 100
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
10
1.0 Cycle
G3SBA20, G3SBA60 & G3SBA80
Vishay General Semiconductor
Document Number: 88606
Revision: 15-Dec-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.01
0.1
1
10
100
0.4 0.81.2 1.6 2.0 2.4
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.01
0.1
1
10
100
806040200 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
A
= 125 °C
T
A
= 25 °C
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance
1
10
100
0.1 101 100
Reverse Voltage (V)
Junction Capacitance (pF)
0.1
1
10
100
0.01 0.1 101 100
t - Heating Time (s)
Transient Thermal Impedance (°C/W)
Case Style GBU
Polarity shown on front side of case, positive lead by beveled corner
0.125 (3.2) x 45°
Chamfer
0.085 (2.16)
0.065 (1.65)
0.020 R (TYP.)
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.075
(1.9) R
.
0.080(2.03)
0.060 (1.52)
0.043 (1.10)
0.035 (0.90)
0.080(2.03)
0.065(1.65) 0.210 (5.33)
0.190 (4.83)
0.140 (3.56)
0.130 (3.30)
9° TYP.
5° TYP.
0.022 (0.56)
0.018(0.46)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)
0.085 (2.16)
0.075 (1.90)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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