SIEMENS Silicon Switching Diode Array @ For high-speed switching @ Electrically insulated diodes BAS 28 1 vpsosi78 Type Marking Ordering Code Pin Configuration Package") (tape and reel) BAS 28 JTs Q62702-A77 4 P 1 | SOT-143 3 F 2 EHAO7008 Maximum Ratings Parameter Symbol! Values Unit Reverse voltage Va 75 Vv Peak reverse voltage Vam 85 Forward current Ir 200 mA Surge forward current, t= 1 ps Tes 4.5 A Total power dissipation, 7s = 31 C Prot 330 mW Junction temperature Ti 150 Cc Storage temperature range Tstg 65... + 150 Thermal Resistance Junction - ambient?) Rthaa < 500 KAW Junction - soldering point Rirus < 360 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mmv/6 cm? Cu. 208 5.91 Semiconductor Group SIEMENS BAS 28 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol! Values Unit min. | typ. | max. DC characteristics Breakdown voltage Tern = 100 pA Ver 85 - ~ Forward voltage ie= IMA Ie= 10MA ir= 50mA Ir=150mA Ve - - 718 - - 1250 mV Reverse current Va=75V Va = 25 V, Ta= 150C Va=75V, Ta= 150C Ta | i _ AC characteristics Diode capacitance Va=OV, f= 1MHz Co pF Reverse recovery time Ie = 10 mA, In=10 mA, Rc = 100 Q measured at Jn=1mMA tr ns Test circuit for reverse recovery time OUT. LU t, Oxcitograph Ceeneets Pulse generator: tp = 100 ns, D = 0.05 t= 0.6 ns, Ri = 50 Q Semiconductor Group Oscillograph: R= 500 209 t = 0.35 ns CsipF SIEMENS BAS 28 Forward current Ir = f (Ta*; Ts) Reverse current /r = f (Ta) * Package mounted on epoxy 300 BAS 28 HBO0033 5 BAS 28 EHBOOG34 if F mA Ty 200 ~ Ss N A NN Ny NN NUN 100 NES N\ TN fy N\ N % 50 100 C 150 > Tals Forward current /r = f (Ve) Ta = 25C 150 Bas 28 HB0003S Is mA 50 0 0.5 1.0 Yo15 ~ Semiconductor Group 0 50 100 C 150 e~ 7 A Peak forward current /rw = f () Ta = 25C t HB000e $ 107! { ~2 yore 4075 10-4 ws 1072 1a7's 10 210 SIEMENS BAS 28 Forward voltage Vr = f (7a) 1.0 BAS 28 He00037 Jp=100mA = 0.5 0 50 100 C 150 " Semiconductor Group