Target Specificationof IMBI200SA--120 1. Outline Drawing ( Unii : mm ) 2440.2 ,20+0.2, 2940.2 8 27+0.2 48+0.2 62+) 20+0.2, 2040.2 9340.2 108+} ial and the Information herein is the property af Co.Lid They shall be neither reproduced. copied closed in any way whatsoever for the use af any ty.nor used for the manufacturing purposes wilhout s written consent of Fuji Electric Co. Lid See se te In di e wee che? 2. Equivalent circuit Cc Cc I A E E . DATE NAME APPROVED Fuji Electric Co Ltd DRAWN Feb - ff -77, NM Ankawa : cneckeo Feb -1) - 9.8, Mather SMTSF 9777 1, REVICIONS : 7 Kyat = /5 |1 This material and ihe Information heraln is the property of Fuji Elecinc Co.Lid. They shalt be neither reproduced. copied lant, or disclosed in any way whatsoever far the use of any third party.nor used for tha manufac turing purposes without the express written consent of Fuji Electric Co.,Ltd 3. Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified ) Ttems Symbols Conditions Ratings Units Collector-Emitter voltage YCES 1200 V Gate-Emitter voltage VGES +20- y Ic Continuous Te=25T 300 Tc=80T 200 Collector current Ic pulse ims Te=25C 600 A Tc=80T 400 -Ie 200 -[c pulse lms 400 Collector Power Dissipation Pc 1 device 1300 q Junction temperature Tj 150 c Storage temperature Tstg -40~ +125 | Isolation voltage Viso AC : Imin. 2500 Vv Mount ing 3.5 Screw Torque Terminals * 4.5 Nea Terminals? 1.7 (#1) All terminals should be connected together when isolation test will be done. (#2) Recommendable Value: 2.5~3.5 N+m (M5) or (M6) (#3) Recommendable Value : 3.5~4.5 N-m (M6) (#4) Recommendable Value: 1.3~1.7N-m (M4) . Electrical characteristics ( at Tj= 25C unless otherwise specified) Characteristics Items Symbols Conditions min. | typ. | Max. [Units Fo eee ve aee Ices |VGE= OV, VCE= 1200V 4.0 | mA Gate-Emitter leakage current [GES |VCE = OV, VGE= +20V 0. 8 LA va chald vol tage VoE(Gh) |VeE= 20, Ic= 200m] 55172] 851] CollectorEmitter VCE (sat) |YGE = 15V | Ti = 25 2. 3 2. 6 V saturation voltage Ic = 200A | Tj = 125 2.8 Input capacitance Cies |VGE = ov 24000 Output capacitance Coes |VCE = 10 Vv 5000 pF Reverse transfer capacitance Cres |f = 1 MHz 4400 ton j|Vcc = 600V 1.2 Turn-on time tr Ic = 200 A 0. 6 Tg) |VGE= +13 VY 0.1 LS Turn-off time toff |RC = 4.7Q 1.0 uf 0.08 | 0.3 Forward on voltage VF |IF = 9004 | Tie 25 24 | 3.3 Vv Tj) = 128 T 2. 0 Reverse recovery time trr IF = 200 A 0.35 | ws 5. Thermal resistance characteristics Characteristics [tems Symbols Conditions min. | typ. | Max. [Units Thermal resistance RthGj-c) | IGBT 0. 096 (1 device) FWD 0. 260 C/W Contact Thermal resistance Rth(c-f) | with Thermal Compound * 0. 0125 % This is the value which is defined mounting on the additional cooling fin with thermal compound. Note : This specification is only for technical considerations, and not for contract. This specification is subject to be changed without notices. Fant Flactric Co ltd. : MT5F 9777 27 1G.NOThis matecial and the Information herein is the property of Fuji Electne Co Lid They shalt be neither reproduced. copied lent, or disclosed in any way whatsoever for the use of any third partynor used for Ihe manufac turing purposes without the express written consent of Fuji Electric Co. Ltd. REVISIONS Collector current vs. Collector-Emitter voltage Tis 26 (typ.) 500 or VGE= 20 15Y 12 400 : < | | A f = 300 eclor current Collector current vs. ay 3 4 5 Collector - Emitter vollage : VCE Collector-Emitter voltage VGE=15V (typ. ) 506 >+ ____ ye BC Tis 1B ! ; 400 - - <= L ' 4 = 300 x= - po 4 = 206 = : i x L i i : 4 = 100 Q 1 1 i 0 1 2 3 4 3 Collector - Emitter vollage VcE [] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= IMHz, Tj= 2670 50000 T t 1 : ' _ Cies 7 ; 4 \ = 10000 b 4 4 4 5000 2 1000 b | L : : = og 7 500 i i 1 i 1 1 0 10 15 20 25 30 35 Collector - Emitter voltage VCE 3 Collector current vs. Collector-Emitter voltage Ty= 125 (typ. ) $00 + : _ ; i : . ! { Lee eed .. [- - pedetee eee sere ' VGE* 20 | 1sv 12 = = S = s ! i 4 Collector - Emitter voltage : VCE [Vj Collector-Emiiler voltage vs. Gate-Emitter voltage Tj= 250 (typ. ) BO per be { | 4 be e = 8 | . / 6 H a t = f ~ oT 7 = 4 No | . : Te= $004 4 - f No Ie= 200A ae 2 2 L - + Te= 100A L | 4 0 4 oe 1 4 reer eh 5 10 15 20 25 Gale - Emitler voltage VGE [VV] Dynamic Gate charge (typ. ) Vec=600V, [c=200A, Tj= 25 1000 ; + 1 ~ 1 25 I : : : ] ~ 800 20 ~ a u > r 7 aw : = . 600 : 15 Be : = | & s < > = - $ = 400 10C = I 2 = : = : L 4 a ol 5 i | ' = 200 ! { 7 = : 3S 3 L i 4 0 1 1 x 4 1 0 0 500 1000 1500 2000 Gale charge : Qe [ nC} Fuji Electric Co,Ltd. MT5F 9777 JWG.NO.This material and the Intormation herein is the property of Fuji Electne Co.Ltd They shall be neither reproduced. copied lent, or disclosed in any way whatsoever for the use of any third party.nor used for the manufac turing purposes without the express written consent of Fuji Electric Co. Lid, 1000 = 500 cS 100 & 30 5000 _- 1000 = 300 = = 100 5 30 140 = 120 s = 100 oH _- 80 z = 60 S40 = = 2 Fe G Switching time vs. Collector current (typ. ) Vec=600V, VGE=+ 15, Re= 4.70, Tj= 26T r T r T T L fe. a Fc peeee es L whe 4 i | | 4 ! : i I i I Lo. bc bee iw 1 L i 1 4 1 1 i 1 1 0 100 200 300 400 Collector current : Ic [A3} Switching time vs. Gate resistance (1yp.) Vec=600V, [c=200A, VGE=+ 15V. Tj= 26 + ry ; oor Le ton 4 toff i ir bh ur 4 L a. ; 4 1 10 100 Gate resistance : Rg ' Q ] Switching loss vs. Gate resistance (typ.) Vee=600V, [c=200A, VGE== 15V. Ty= 1257 ay Sr con ] L ff es wi _. . ! 10 100 Gate resistance : Rg 'Q ] Vec=600V, VGE=t 15V. Re= 4.7Q . 000 r T + T 7 1 4 t 5 L 4 500 = 5 4 = r r 4 sc ' i . | taf & : ve 100 F 1 3 L. 4 50 J 1 iL i 4 0 160 200 300 400 Collector current Ie :A] Switching loss vs. Collector current (typ.) Yec=600V, VGE== {d. Re=4.7Q 50 r 7 r T r T T : Eons) Zz 40 ~ 1 & ! }Eon(25T ) = LEOf hls) a 5 : . ced = Eof{ (25C ) a 20 Err(125 } = 10 : = Err (25 ) 0 1 1 i 4 0 100 200 300 400 Collector current Ie [AJ Reverse bias safe operating area 4VGE=15V, -VGES 15V, Re2 4.70 , TjS 125T 300 T T T T T T P pot | | 400 ; i ~ i I | <x L : 4 ! I 2 300 ae i } = \ ! : i 4 ' i i i = 200 BF po S 100 4 i i 0 4 i i i i 0 200 400 600 800 1000 1200 1400 Collector - Emitter voltage vcE []} Switching time vs. Collector current (typ. ) Tj= 125 REVISIONS Fuji Electric Co.Ltd. WG.NO. MT5F 9777 -+_+Fujt Electne Co. Lid, They shall be neither reproduced. copied lent, or disclosed in any way whatsoever for the use of any third qarty.nor used for the manufacturing purposes without This material and the Information herein is the property of the express written consent of Fuji Electric Co. Ltd. Forward current vs. Forward on voltage (typ. ) 500 : ' ; 1 + 1 7 Lo. Pe L ee ed Tj=125T Tj=25C 400 <= a 4 = 300 - = 200 = 1 * 100 0 \ 2 3 4 Forward on voltage : WF CV] Transient thermal resistance 0.5 TT . r err - FWD 4 = i L 4 ~ 1GBT = 4 = = E q 0. 645 4 bi ke atl 4 pe al 4 Sed 0. 001 0. 01 0. 1 Pulse width : Pw [ sec j Definitions of switching time Jae VCC NI FLSA Pl rf [a] { nsec } Irr Reverse recovery current irr Reverse recovery line 300 Reverse recovery characteristics (lyp.) Vec=600V, VGE=+ 15V, Rg=4.7Q T * ! qT T 1 4 4 4 1 0 100 200 300 Forward current : IF [A] 400 < : : tof! REVISIONS Fuji Electric Co.Ltd. DWG.NO. MT5F 9777 am