2N5430
MEDIUM POWER
NPN SILICON TRANSISTOR
Designed for switching and wide - band
amplifier applications
VCEO Collector – Emitter Voltage
VCBO Collector – Base Voltage
VEBO Emitter – Base Voltage
ICCollector Current – Continuous
IBBase Current
PDTotal Device Dissipation at Tcase = 25°C
Derate above 25°C
TjOperating and
Tstg Storage Junction Temperature Range
R
q
JC Thermal Resistance, Junction to Case.
100 V
100 V
6 V
7 A
1 A
40 W
228 mW / °C
–65 to 200°C
4.37 °C / W
MECHANICAL DATA
Dimensions in mm (inches)
TO66 Package.
Pin 1 Base
Pin 2 Emitter
Case Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
24.33 (0.958)
24.43 (0.962)
14.48 (0.570)
14.99 (0.590)
3.68
(0.145) rad.
max. 3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028)
0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470)
12.70 (0.500)
LAB
SEME
This product is available screened in
accordance with various military specs.
EG. 2N5430CECC–QR–B
Built and screened in accordance with
CECC procedures.
Screened to sequence B.
Prelim. 1/94
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
BVCEO (sus)*Collector – Emitter
Sustaining Voltage
ICBO Collector Cutoff Current
ICEX Collector Cutoff Current
ICBO Collector Cutoff Current
IEBO Emitter Cutoff Current
100 V
100
m
A
10
m
A
1.0 mA
10
m
A
100
m
A
Min Max Unit
OFF CHARACTERISTICS
Parameter Test Conditions
IC= 50mA , IB= 0
VCE = 90V , IB= 0
VCE = 90V , VEB(off) = 1.5V
VCE = 90V , VEB(off) = 1.5V , TC= 150°C
VCB = Rated VCB , IE= 0
VBE = 6V , IC= 0
hFE*DC Current Gain
Collector – Emitter
VCE(sat)*Saturation Voltage
Base – Emitter
VBE(sat)*Saturation Voltage
60
60 240
40
0.7
1.2
1.2
2.0
ON CHARACTERISTICS
—
V
V
IC= 500mA , VCE = 2V
IC= 2A , VCE = 2V
IC= 5A , VCE = 2V
IC= 2A , IB= 0.2A
IC= 7A , IB= 0.7A
IC= 2A , IB= 0.2A
IC= 7A , IB= 0.7A
Min Max UnitParameter Test Conditions
Current Gain
fTBandwidth Product
Cob Output Capacitance
Cib Input Capacitance
30 MHz
250 pF
1000 pF
DYNAMIC CHARACTERISTICS
IC= 500 mA, VCE = 10V, f = 10 MHz
VCB = 10V, IE= 0, f = 100 kHz
VBE = 2V, IC= 0, f = 100 kHz
Parameter Test Conditions Min Max Unit
tdDelay Time VCC = 40V, VEB(off) = 3V
trRise Time IC= 2A, IB1 = 200mA
tsStorage Time VCC = 40V, IC= 2A
tfFall Time IB1 = IB2 = 200mA
100 ns
100 ns
2.0
m
s
200 ns
SWITCHING CHARACTERISTICS
Parameter Test Conditions Min Max Unit
* Pulse Test: Pulse width = 300
m
s, Duty Cycle = 2.0 %
Prelim. 1/94
2N5430
LAB
SEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
