© Semiconductor Components Industries, LLC, 2019
March, 2020 − Rev. 1
1Publication Order Number:
NVBG020N090SC1/D
MOSFET – SiC Power, Single
N-Channel, D2PAK-7L
900 V, 20 mW, 112 A
NVBG020N090SC1
Features
•Typ. RDS(on) = 20 mW
•Ultra Low Gate Charge (typ. QG(tot) = 200 nC)
•Low Effective Output Capacitance (typ. Coss = 295 pF)
•100% Avalanche Tested
•Qualified According to AEC−Q101
•RoHS Compliant
Typical Applications
•Automotive On Board Charger
•Automotive DC/DC Converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 900 V
Gate−to−Source Voltage VGS +19/−10 V
Recommended Operation Val-
ues of Gate − Source Voltage
TC < 175°C VGSop +15/−5 V
Continuous Drain
Current RqJC (Note 2)
Steady
State
TC = 25°CID112 A
Power Dissipation
RqJC (Note 2)
PD477 W
Continuous Drain
Current RqJA
(Notes 1, 2)
Steady
State
TA = 25°CID9.8 A
Power Dissipation
RqJA (Notes 1, 2)
PD3.7 W
Pulsed Drain Current (Note 3) TA = 25°C IDM 448 A
Single Pulse Surge
Drain Current Capa-
bility (Note 4)
TA = 25°C, tp = 10 ms,
RG = 4.7 W
IDSC 854 A
Operating Junction and Storage Temperature
Range
TJ, Tstg −55 to
+175
°C
Source Current (Body Diode) IS148 A
Single Pulse Drain−to−Source Avalanche
Energy (IL = 23 Apk, L = 1 mH) (Note 5)
EAS 264 mJ
Maximum Lead Temperature for Soldering, 1/8″
from Case for 10 Seconds
TL245 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on a FR−4 board using1 in2 pad of 2 oz copper.
2. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions noted.
3. Repetitive rating, limited by max junction temperature.
4. Peak current might be limited by transconductance.
5. EAS of 264 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A, VDD =
100 V, VGS = 15 V.
D2PAK−7L
CASE 418BJ
See detailed ordering and shipping information on page 6 of
this data sheet.
ORDERING INFORMATION
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MARKING DIAGRAM
V(BR)DSS RDS(ON) MAX ID MAX
900 V 28 mW @ 15 V 112 A
N−CHANNEL MOSFET
Drain (TAB)
Power Source (Pins 3, 4, 5, 6, 7)
Gate (Pin 1)
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Lot Traceability
NVBG020N090SC1 = Specific Device Code
AYWWZZ
NVBG
020N090SC1
Driver Source (Pin 2)
NVBG020N090SC1
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Table 1. THERMAL CHARACTERISTICS
Parameter Symbol Max Units
Thermal Resistance Junction−to−Case (Note 2) RθJC 0.31 °C/W
Thermal Resistance Junction−to−Ambient (Notes 1, 2) RθJA 41 °C/W
Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 900 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJID = 1 mA, refer to 25°C 440 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V
VDS = 900 V
TJ = 25°C 100 mA
TJ = 175°C 250 mA
Gate−to−Source Leakage Current IGSS VGS = +19/−10 V, VDS = 0 V ±1mA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VGS = VDS , ID = 20 mA 1.8 2.6 4.3 V
Recommended Gate Voltage VGOP −5 +15 V
Drain−to−Source On Resistance RDS(on) VGS = 15 V, ID = 60 A, TJ = 25°C 20 28 mW
VGS = 15 V, ID = 60 A, TJ = 175°C 27 mW
Forward Transconductance gFS VDS = 20 V, ID = 60 A 49 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS VGS = 0 V, f = 1 MHz,
VDS = 450 V
4415 pF
Output Capacitance COSS 295
Reverse Transfer Capacitance CRSS 25
Total Gate Charge QG(TOT) VGS = −5/15 V, VDS = 720 V,
ID = 60 A
200 nC
Threshold Gate Charge QG(TH) 42
Gate−to−Source Charge QGS 76
Gate−to−Drain Charge QGD 56
Gate−Resistance RGf = 1 MHz 1.5 W
SWITCHING CHARACTERISTICS
Turn−On Delay Time td(ON) VGS = −5/15 V, VDS = 720 V,
ID = 60 A, RG = 2.5 W,
Inductive Load
39 ns
Rise Time tr52
Turn−Off Delay Time td(OFF) 58
Fall Time tf13
Turn−On Switching Loss EON 1551 mJ
Turn−Off Switching Loss EOFF 179
Total Switching Loss ETOT 1730
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
Current
ISD VGS = −5 V, TJ = 25°C 148 A
Pulsed Drain−Source Diode Forward Current
(Note 3)
ISDM VGS = −5 V, TJ = 25°C 448 A
Forward Diode Voltage VSD VGS = −5 V, ISD = 30 A, TJ = 25°C 3.7 V
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Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Parameter UnitMaxTypMinTest ConditionSymbol
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time tRR VGS = −5/15 V, ISD = 60 A, dIS/dt =
1000 A/ms, VDS = 720 V
28 ns
Reverse Recovery Charge QRR 186 nC
Reverse Recovery Energy EREC 4mJ
Peak Reverse Recovery Current IRRM 14 A
Charge time Ta 17 ns
Discharge time Tb 11 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NVBG020N090SC1
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TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
TJ, JUNCTION TEMPERATURE (°C)
0.7
Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current
VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)
1512
0
3
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
RDS(on), ON−RESISTANCE (mW)
IS, REVERSE DRAIN CURRENT (A)
ID = 60 A
VGS = 15 V
VDS = 20 V
6
1.9
0.9
1
300
80
1.1
40
TJ = 25°C
TJ = 175°C
3
9
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
2
0
30
0
ID, DRAIN CURRENT (A)
120
VGS = 15 V
9 V
48
10 V
100
VGS = 10 V
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
5
9
20
60
100
6
150
50
1.7
10
80
40
0
4
06090
TJ = 25°C
200
10
120
13 V
12 V
150
15 20
120
160
TJ = −55°C
53
3
2
1
ID = 60 A
1.3
1.5
7
VGS = −5 V
7 V
6 V
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
9 V
12 V
13 V
15 V
1501251002505075−25−50 175−75
TJ = 150°C
ID, DRAIN CURRENT (A)
TJ = 175°C TJ = −55°C
TJ = 25°C
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TYPICAL CHARACTERISTICS
Figure 7. Gate−to−Source Voltage vs. Total
Charge
Figure 8. Capacitance vs. Drain−to−Source
Voltage
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.1
10
100
1K
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE (°C)
100100.001
1
1751257550
Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power
Dissipation
VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec)
1010.1
0.1
10
100
1000
10K
CAPACITANCE (pF)
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
P(PK), PEAK TRANSIENT POWER (w)
0.00001
10 ms
1 ms
10 ms
VGS = 15 V
100
1
100
20
1K
0
140
50K
10
10K
80
RqJC = 0.31°C/W
0.1
100 ms
This area is lim-
ited by RDS(on)
Typical performance based
on characterization data
1
1
10
100 150
0.0001
25
100
100 800
100 ms
0.001 0.01
40
60
100
120
Ciss
Coss
Crss
f = 1 MHz
VGS = 0 V
10.01 0.1
TJ = 25°C
TJ = 150°C
1000 5000
Single Pulse
TJ = Max Rated
RqJC = 0.31°C/W
TC = 25°C
Single Pulse
RqJC = 0.31°C/W
TC = 25°C
100K
VDD = 720 V
Qg, GATE CHARGE (nC)
−5
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID = 60 A
1000
5
15
50 200150
10
VDD = 180 V
VDD = 540 V
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TYPICAL CHARACTERISTICS
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
t, RECTANGULAR PULSE DURATION (sec)
0.10.0001
0.001
r(t), NORMALIZED EFFECTIVE TRAN-
SIENT THERMAL RESISTANCE
0.010.001
0.1
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
0.00001
0.01
1
2
PDM
t1
Notes:
ZqJC (t) = r(t) x RqJC
RqJC = 0.31°C/W
Peak TJ = PDM x ZqJC (t) + TC
Duty Cycle, D = t1/t2
t2
DEVICE ORDERING INFORMATION
Device Package Shipping
†
NVBG020N090SC1 D2PAK−7L 800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVBG020N090SC1
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