Silicon C a rbide Sc h ottk y Dio d e IDW10G120C5B 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.1 2017-07-21 Indust rial Po wer C o ntrol IDW10G120C5B 5th Generation CoolSiCTM 1200 V SiC Schottky Diode CoolSiCTM SiC Schottky Diode 1 Features: CASE 2 3 Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness 1) Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Benefits System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic Applications Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction Package pin definitions Pin 1 - anode 1 Pin 2 and backside - cathode Pin 3 - anode 2 Key Performance and Package Parameters (leg/device) Type IDW10G120C5B VDC IF QC Tj,max Marking Package 1200 V 5 / 10 A 28 / 57 nC 175C D1012B5 PG-TO247-3 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Table of Contents Description .................................................................................................................................................. 2 Table of Contents ........................................................................................................................................ 3 Maximum Ratings ....................................................................................................................................... 4 Thermal Resistances .................................................................................................................................. 4 Electrical Characteristics............................................................................................................................. 5 Electrical Characteristics Diagram .............................................................................................................. 5 Package Drawings ...................................................................................................................................... 9 Revision History ........................................................................................................................................ 10 Disclaimer ................................................................................................................................................. 11 Final Data Sheet 3 Rev. 2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Maximum ratings Parameter Symbol Repetitive peak reverse voltage VRRM Continuous forward current for Rth(j-c,max) TC = 156C, D=1 TC = 135C, D=1 TC = 25C, D=1 Surge non-repetitive forward current, sine halfwave TC=25C, tp=10ms TC=150C, tp=10ms Non-repetitive peak forward current TC = 25C, tp=10 s it value TC = 25C, tp=10 ms TC = 150C, tp=10 ms Diode dv/dt ruggedness VR=0...960 V Power dissipation for Rth(j-c,max) TC = 25C Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads 1.6mm (0.063 in.) from case for 10 s Mounting torque M3 and M4 screws Value (leg/device) Unit 1200 V 5 / 10 8 / 16 17 / 34 IF A IF,SM 70 / 140 65 / 130 A IF,max 530 / 1070 A idt 25 / 98 21 / 84 As dv/dt 80 V/ns Ptot 74 / 148 W Tj;Tstg -55...175 C Tsold 260 C M 0.7 Nm Thermal Resistances Parameter Value (leg/device) Symbol Conditions min. typ. max. Unit Characteristic Diode thermal resistance, junction - case Thermal resistance, junction - ambient Final Data Sheet Rth(j-c) Rth(j-a) leaded - 4 1.6/0.8 - 2.0/1.0 K/W 62 K/W Rev. 2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Electrical Characteristics Static Characteristic, at Tj=25C, unless otherwise specified Parameter Symbol Conditions DC blocking voltage VDC Diode forward voltage VF Reverse current IR Value (leg/device) Tj = 25C IF= 5/10 A, Tj=25C IF= 5/10 A, Tj=150C VR=1200 V, Tj=25C VR=1200 V, Tj=150C min. typ. max. 1200 - 1.4 1.7 3/6 14 / 28 1.65 2.30 40 / 80 210 / 420 Unit V V A Dynamic Characteristics, at Tj=25C, unless otherwise specified Parameter Value (leg/device) Symbol Conditions Unit min. typ. max. - 28 / 57 - nC - 365 / 730 26 / 51 20 / 41 - pF VR = 800 V, Tj=150C & 25C Total capacitive charge QC VR QC C (V )dV 0 Total Capacitance Final Data Sheet C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz 5 Rev. 2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Electrical Characteristics diagrams Per leg Per leg Figure 1. Power dissipation per leg as function of case temperature, Ptot=f(TC), Rth(j-c),max Figure 2. Diode forward current per leg as function of case temperature, IF=f(TC), Tj175C, Rth(j-c),max, parameter D=duty cycle, Vth, Rdiff @ Tj=175C Per leg Per leg Figure 3. Typical forward characteristics per leg, IF=f(VF), tp= 10 s, parameter: Tj Final Data Sheet Figure 4. Typical forward characteristics in surge current per leg, IF=f(VF), tp= 10 s, parameter: Tj 6 Rev. 2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiCTM 1200 V SiC Schottky Diode 1.E-04 Per leg 1.E-05 Per leg IR [A] 1.E-06 1.E-07 175 C 150 C 1.E-08 100 C 1.E-09 200 Figure 5. Typical capacitive charge per leg as 1 function of current slope , QC=f(dIF/dt), Tj=150C -55 C 600 800 VR [V] 1000 1200 Figure 6. Typical reverse characteristics per leg, IR=f(VR), parameter: Tj 1) guaranteed by design. Per leg Per leg Figure 7. Max. transient thermal impedance per leg, Zth,j-c=f(tP), parameter: D=tP/T Final Data Sheet 400 25 C Figure 8. Typical capacitance per leg as function of reverse voltage, C=f(VR); Tj=25C; f=1 MHz 7 Rev. 2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiCTM 1200 V SiC Schottky Diode 18 16 Per leg 14 EC [J] 12 10 8 6 4 2 0 0 200 400 600 800 VR [V] 1000 1200 Figure 9. Typical capacitively stored energy as function of reverse voltage, per leg, EC=f(VR) Final Data Sheet 8 Rev. 2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Package Drawings Final Data Sheet 9 Rev. 2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Revision History IIDW10G120C5B Revision: 2017-07-21, Rev. 2.1 Previous Revision: Revision Date Subjects (major changes since last version) 2.0 2014-06-10 Final data sheet 2.1 Editorial Changes Disclaimer We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Final Data Sheet 10 Rev. 2.1, 2017-07-21 IDW10G120C5B 5th Generation CoolSiCTM 1200 V SiC Schottky Diode Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2017. All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. Final Data Sheet 11 Rev. 2.1, 2017-07-21