Industrial Power Control
Silicon Carbide Schottky Diode
Final Datasheet
Rev. 2.1 2017-07-21
IDW10G120C5B
5th Generation CoolSiC V SiC Schottky Diode
1) J-STD20 and JESD22
Final Data Sheet 2 Rev. 2.1, 2017-07-21
5th Generation CoolSiC V SiC Schottky Diode
IDW10G120C5B
CoolSiCTM SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
Benefits
System efficiency improvement over Si diodes
Enabling higher frequency / increased power density solutions
System size/cost savings due to reduced heatsink requirements and smaller magnetics
Reduced EMI
Highest efficiency across the entire load range
Robust diode operation during surge events
High reliability
RelatedLinks: www.infineon.com/sic
Applications
Solar inverters
Uninterruptable power supplies
Motor drives
Power Factor Correction
Package pin definitions
Pin 1 anode 1
Pin 2 and backside cathode
Pin 3 anode 2
Key Performance and Package Parameters (leg/device)
Type
VDC
IF
QC
Tj,max
Marking
Package
IDW10G120C5B
1200 V
5 / 10 A
28 / 57 nC
175°C
D1012B5
PG-TO247-3
1
2
3
CASE
Final Data Sheet 3 Rev. 2.1, 2017-07-21
5th Generation CoolSiC V SiC Schottky Diode
IDW10G120C5B
Table of Contents
Description .................................................................................................................................................. 2
Table of Contents ........................................................................................................................................ 3
Maximum Ratings ....................................................................................................................................... 4
Thermal Resistances .................................................................................................................................. 4
Electrical Characteristics ............................................................................................................................. 5
Electrical Characteristics Diagram .............................................................................................................. 5
Package Drawings ...................................................................................................................................... 9
Revision History ........................................................................................................................................ 10
Disclaimer ................................................................................................................................................. 11
Final Data Sheet 4 Rev. 2.1, 2017-07-21
5th Generation CoolSiC V SiC Schottky Diode
IDW10G120C5B
Maximum ratings
Parameter
Symbol
Value (leg/device)
Unit
Repetitive peak reverse voltage
VRRM
1200
V
Continuous forward current for Rth(j-c,max)
TC = 156°C, D=1
TC = 135°C, D=1
TC = 25°C, D=1
IF
5 / 10
8 / 16
17 / 34
A
Surge non-repetitive forward current, sine halfwave
TC=25°C, tp=10ms
TC=150°C, tp=10ms
IF,SM
70 / 140
65 / 130
A
Non-repetitive peak forward current
TC = 25°C, tp=10 µs
IF,max
530 / 1070
A
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
∫ i²dt
25 / 98
21 / 84
A²s
Diode dv/dt ruggedness
VR=0...960 V
dv/dt
80
V/ns
Power dissipation for Rth(j-c,max)
TC = 25°C
Ptot
74 / 148
W
Operating and storage temperature
Tj;Tstg
-175
°C
Soldering temperature,
wavesoldering only allowed at leads
1.6mm (0.063 in.) from case for 10 s
Tsold
260
°C
Mounting torque
M3 and M4 screws
M
0.7
Nm
Thermal Resistances
Parameter
Symbol
Conditions
Value (leg/device)
Unit
min.
typ.
max.
Characteristic
Diode thermal resistance,
junction case
Rth(j-c)
-
1.6/0.8
2.0/1.0
K/W
Thermal resistance,
junction ambient
Rth(j-a)
leaded
-
-
62
K/W
Final Data Sheet 5 Rev. 2.1, 2017-07-21
5th Generation CoolSiC V SiC Schottky Diode
IDW10G120C5B
Electrical Characteristics
Static Characteristic, at Tj=25°C, unless otherwise specified
Parameter
Symbol
Conditions
Value (leg/device)
Unit
min.
typ.
max.
DC blocking voltage
VDC
Tj = 25°C
1200
-
-
V
Diode forward voltage
VF
IF= 5/10 A, Tj=25°C
IF= 5/10 A, Tj=150°C
-
-
1.4
1.7
1.65
2.30
V
Reverse current
IR
VR=1200 V, Tj=25°C
VR=1200 V, Tj=150°C
3 / 6
14 / 28
40 / 80
210 / 420
µA
Dynamic Characteristics, at Tj=25°C, unless otherwise specified
Parameter
Symbol
Conditions
Value (leg/device)
Unit
min.
typ.
max.
Total capacitive charge
QC
VR = 800 V, Tj=150°C & 25°C
R
V
CdVVCQ
0
)(
-
28 / 57
-
nC
Total Capacitance
C
VR=1 V, f=1 MHz
VR=400 V, f=1 MHz
VR=800 V, f=1 MHz
-
-
-
365 / 730
26 / 51
20 / 41
-
-
-
pF
Final Data Sheet 6 Rev. 2.1, 2017-07-21
5th Generation CoolSiC V SiC Schottky Diode
IDW10G120C5B
Electrical Characteristics diagrams
Figure 1. Power dissipation per leg as function
of case temperature, Ptot=f(TC),
Rth(j-c),max
Figure 2. Diode forward current per leg as function
of case temperature, IF=f(TC), Tj≤175°C,
Rth(j-c),max, parameter D=duty cycle,
Vth, Rdiff @ Tj=175°C
Figure 3. Typical forward characteristics per leg,
IF=f(VF), tp= 10 µs, parameter: Tj
Figure 4. Typical forward characteristics in surge
current per leg, IF=f(VF), tp= 10 µs,
parameter: Tj
Per leg
Per leg
Per leg
Per leg
Final Data Sheet 7 Rev. 2.1, 2017-07-21
5th Generation CoolSiC V SiC Schottky Diode
IDW10G120C5B
Figure 5. Typical capacitive charge per leg as
function of current slope1, QC=f(dIF/dt), Tj=150°C
1) guaranteed by design.
Figure 6. Typical reverse characteristics per leg,
IR=f(VR), parameter: Tj
Figure 7. Max. transient thermal impedance per leg,
Zth,j-c=f(tP), parameter: D=tP/T
Figure 8. Typical capacitance per leg as function of
reverse voltage, C=f(VR); Tj=25°C; f=1 MHz
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
200 400 600 800 1000 1200
IR[A]
VR[V]
-55C
25C
100C
150C
175C
Per leg
Per leg
Per leg
Per leg
Final Data Sheet 8 Rev. 2.1, 2017-07-21
5th Generation CoolSiC V SiC Schottky Diode
IDW10G120C5B
Figure 9. Typical capacitively stored energy as
function of reverse voltage, per leg, EC=f(VR)
0
2
4
6
8
10
12
14
16
18
0200 400 600 800 1000 1200
EC[µJ]
VR[V]
Per leg
Final Data Sheet 9 Rev. 2.1, 2017-07-21
5th Generation CoolSiC V SiC Schottky Diode
IDW10G120C5B
Package Drawings
Final Data Sheet 10 Rev. 2.1, 2017-07-21
5th Generation CoolSiC V SiC Schottky Diode
IDW10G120C5B
Revision History
Disclaimer
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IIDW10G120C5B
Revision: 2017-07-21, Rev. 2.1
Previous Revision:
Revision
Date
Subjects (major changes since last version)
2.0
2014-06-10
Final data sheet
2.1
-
Editorial Changes
Final Data Sheet 11 Rev. 2.1, 2017-07-21
5th Generation CoolSiC V SiC Schottky Diode
IDW10G120C5B
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2017.
All Rights Reserved.
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The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
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