TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors Designed for general-purpose amplifier and low frequency switching applications. Features * High DC Current Gain - * * * Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V Collector-Emitter Sustaining Voltage - @ 30 mA VCEO(sus) = 60 Vdc (Min) - TIP140, TIP145 = 80 Vdc (Min) - TIP141, TIP146 = 100 Vdc (Min) - TIP142, TIP147 Monolithic Construction with Built-In Base-Emitter Shunt Resistor These are Pb-Free Devices* MAXIMUM RATINGS Rating Symbol TIP140 TIP145 TIP141 TIP146 TIP142 TIP147 Unit Collector - Emitter Voltage VCEO 60 80 100 Vdc Collector - Base Voltage VCB 60 80 100 Vdc Emitter - Base Voltage VEB Collector Current - Continuous - Peak (Note 1) IC 5.0 Vdc Adc 10 15 Base Current - Continuous IB 0.5 Adc Total Power Dissipation @ TC = 25_C PD 125 W TJ, Tstg -65 to +150 _C Operating and Storage Junction Temperature Range 10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS, 125 WATTS SOT-93 (TO-218) CASE 340D STYLE 1 TO-247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO-247 package. Reference FPCN# 16827. ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic http://onsemi.com Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 1.0 C/W Thermal Resistance, Junction-to-Ambient RqJA 35.7 C/W See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 5 ms, v 10% Duty Cycle. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 May, 2012 - Rev. 6 1 Publication Order Number: TIP140/D TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) MARKING DIAGRAMS TO-247 TO-218 TIP14x AYWWG AYWWG TIP14x 1 BASE 1 BASE 3 EMITTER 2 COLLECTOR 2 COLLECTOR TIP14x A Y WW G 3 EMITTER = = = = = Device Code Assembly Location Year Work Week Pb-Free Package DARLINGTON SCHEMATICS NPN TIP140 TIP141 TIP142 PNP TIP145 TIP146 TIP147 COLLECTOR BASE COLLECTOR BASE 8.0 k 40 8.0 k EMITTER 40 EMITTER ORDERING INFORMATION Package Shipping TIP140G Device SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP141G SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP142G SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP145G SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP146G SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP147G SOT-93 (TO-218) (Pb-Free) 30 Units / Rail TIP140G TO-247 (Pb-Free) 30 Units / Rail TIP141G TO-247 (Pb-Free) 30 Units / Rail TIP142G TO-247 (Pb-Free) 30 Units / Rail TIP145G TO-247 (Pb-Free) 30 Units / Rail TIP146G TO-247 (Pb-Free) 30 Units / Rail TIP147G TO-247 (Pb-Free) 30 Units / Rail http://onsemi.com 2 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIII IIIIIII IIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIII IIIII IIII III IIII III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max 60 80 100 - - - - - - - - - - - - 2.0 2.0 2.0 - - - - - - 1.0 1.0 1.0 - - 20 1000 500 - - - - - - - - 2.0 3.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 2) (IC = 30 mA, IB = 0) VCEO(sus) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Collector Cutoff Current (VCB = 60 V, IE = 0) (VCB = 80 V, IE = 0) (VCB = 100 V, IE = 0) TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 Vdc ICEO mA ICBO Emitter Cutoff Current (VBE = 5.0 V) mA IEBO mA ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 5.0 A, VCE = 4.0 V) (IC = 10 A, VCE = 4.0 V) hFE - Collector-Emitter Saturation Voltage (IC = 5.0 A, IB = 10 mA) (IC = 10 A, IB = 40 mA) VCE(sat) Vdc Base-Emitter Saturation Voltage (IC = 10 A, IB = 40 mA) VBE(sat) - - 3.5 Vdc Base-Emitter On Voltage (IC = 10 A, VCE = 4.0 Vdc) VBE(on) - - 3.0 Vdc td - 0.15 - ms tr - 0.55 - ms ts - 2.5 - ms tf - 2.5 - ms SWITCHING CHARACTERISTICS Resistive Load (See Figure 1) Delay Time Rise Time Storage Time (VCC = 30 V, IC = 5.0 A, IB = 20 mA, Duty Cycle v 2.0%, IB1 = IB2, RC & RB Varied, TJ = 25_C) Fall Time 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%. 10 VCC -30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA RC ts SCOPE t, TIME (s) TUT V2 approx +12 V RB 51 0 V1 appox. -8.0 V D1 8.0 k PNP NPN 5.0 40 2.0 tf 1.0 tr 0.5 +4.0 V 25 ms tr, tf 10 ns DUTY CYCLE = 1.0% td @ VBE(off) = 0 0.2 for td and tr, D1 is disconnected and V2 = 0 0.1 0.2 For NPN test circuit reverse diode and voltage polarities. Figure 1. Switching Times Test Circuit 0.5 1.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 2. Switching Times http://onsemi.com 3 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 10 20 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) TYPICAL CHARACTERISTICS NPN TIP140, TIP141, TIP142 PNP TIP145, TIP146, TIP147 20,000 TJ = 150C TJ = 150C 100C 25C 2000 -55C 1000 500 100C 10,000 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 5000 7000 25C 5000 -55C 3000 2000 VCE = 4.0 V 300 0.5 VCE = 4.0 V 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 1000 0.5 10 0.7 1.0 2.0 3.0 4.0 5.0 IC, COLLECTOR CURRENT (AMPS) 7.0 10 VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) VCE(SAT) , COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS) Figure 3. DC Current Gain versus Collector Current 5.0 3.0 2.0 IC = 10 A, IB = 4.0 mA IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 -75 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 175 5.0 3.0 2.0 IC = 10 A, IB = 4.0 mA IC = 5.0 A, IB = 10 mA 1.0 IC = 1.0 A, IB = 2.0 mA 0.7 0.5 -75 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 175 4.0 3.6 VBE, BASE-EMITTER VOLTAGE (VOLTS) VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 4. Collector-Emitter Saturation Voltage VCE = 4.0 V 3.2 2.8 2.4 IC = 10 A 2.0 1.6 5.0 A 1.2 0.8 -75 1.0 A -25 25 75 125 4.0 3.6 3.2 2.8 2.4 IC = 10 A 2.0 1.6 5.0 A 1.2 0.8 -75 175 VCE = 4.0 V 1.0 A -25 25 75 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Base-Emitter Voltage http://onsemi.com 4 125 175 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) ACTIVE-REGION SAFE OPERATING AREA There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 150_C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP) (mA) 20 10 7.0 5.0 3.0 2.0 dc TJ = 150C SECONDARY BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25C 1.0 TIP140, 145 TIP141, 146 TIP142, 147 30 50 20 15 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.2 10 15 10 7.0 5.0 100 mJ 2.0 1.0 0.5 1.0 2.0 5.0 10 20 L, UNCLAMPED INDUCTIVE LOAD (mH) 100 Figure 6. Active-Region Safe Operating Area Figure 7. Unclamped Inductive Load VCE MONITOR INPUT VOLTAGE COLLECTOR CURRENT MPS-U52 100 mH RBB1 INPUT 50 TUT 1.5k 50 VCC = 20 V IC MONITOR RBB2 = 100 VBB2 = 0 VBB1 = 10 V 50 RS = 0.1 w 7.0 ms (SEE NOTE 1) 5.0 V 0 100 ms 0 1.42 A VCE(sat) -20 V COLLECTOR VOLTAGE V(BR)CER TEST CIRCUIT NOTE 1: Input pulse width is increased until ICM = 1.42 A. NOTE 2: For NPN test circuit reverse polarities. VOLTAGE AND CURRENT WAVEFORMS Figure 8. Inductive Load http://onsemi.com 5 100 hfe , SMALL-SIGNAL FORWARD CURRENT TRANSFER RATIO TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) 100 70 50 VCE = 10 V IC = 1.0 A TJ = 25C PNP PNP NPN 20 10 7.0 5.0 NPN 2.0 1.0 1.0 2.0 3.0 5.0 f, FREQUENCY (MHz) 7.0 10 Figure 9. Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio PD, POWER DISSIPATION (WATTS) 5.0 4.0 3.0 2.0 1.0 0 0 40 80 120 160 TA, FREE-AIR TEMPERATURE (C) 200 Figure 10. Free-Air Temperature Power Derating http://onsemi.com 6 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) PACKAGE DIMENSIONS SOT-93 (TO-218) CASE 340D-02 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C Q B U DIM A B C D E G H J K L Q S U V 4 A L S E 1 K 2 3 J H D MILLIMETERS MIN MAX --20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. V G INCHES MIN MAX --0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR TO-247 CASE 340L-02 ISSUE F -T- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C -B- E U N L 4 A -Q- 1 2 0.63 (0.025) 3 P -Y- K F 2 PL W J D 3 PL 0.25 (0.010) M Y Q T B M STYLE 3: PIN 1. 2. 3. 4. H G M DIM A B C D E F G H J K L N P Q U W S http://onsemi.com 7 MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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