© Semiconductor Components Industries, LLC, 2012
May, 2012 Rev. 6
1Publication Order Number:
TIP140/D
TIP140, TIP141, TIP142,
(NPN); TIP145, TIP146,
TIP147, (PNP)
Darlington Complementary
Silicon Power Transistors
Designed for generalpurpose amplifier and low frequency
switching applications.
Features
High DC Current Gain
Min hFE = 1000 @ IC
= 5.0 A, VCE = 4 V
CollectorEmitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP140, TIP145
= 80 Vdc (Min) TIP141, TIP146
= 100 Vdc (Min) TIP142, TIP147
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
These are PbFree Devices*
MAXIMUM RATINGS
Rating Symbol
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147 Unit
Collector Emitter Voltage VCEO 60 80 100 Vdc
Collector Base Voltage VCB 60 80 100 Vdc
Emitter Base Voltage VEB 5.0 Vdc
Collector Current
Continuous
Peak (Note 1)
IC10
15
Adc
Base Current Continuous IB0.5 Adc
Total Power Dissipation
@ TC = 25_C
PD125 W
Operating and Storage
Junction Temperature Range
TJ, Tstg 65 to +150 _C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
JunctiontoCase
RqJC 1.0 °C/W
Thermal Resistance,
JunctiontoAmbient
RqJA 35.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 5 ms, v 10% Duty Cycle.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60100 VOLTS, 125 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SOT93 (TO218)
CASE 340D
STYLE 1
TO247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO247
package. Reference FPCN# 16827.
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
http://onsemi.com
2
MARKING DIAGRAMS
AYWWG
TIP14x
TIP14x
AYWWG
1 BASE
2 COLLECTOR
3 EMITTER
TIP14x = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G=PbFree Package
1 BASE
2 COLLECTOR
3 EMITTER
TO247
TO218
DARLINGTON SCHEMATICS
BASE
EMITTER
COLLECTOR
8.0 k 40
BASE
EMITTER
COLLECTOR
8.0 k 40
NPN
TIP140
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
ORDERING INFORMATION
Device Package Shipping
TIP140G SOT93 (TO218)
(PbFree)
30 Units / Rail
TIP141G SOT93 (TO218)
(PbFree)
30 Units / Rail
TIP142G SOT93 (TO218)
(PbFree)
30 Units / Rail
TIP145G SOT93 (TO218)
(PbFree)
30 Units / Rail
TIP146G SOT93 (TO218)
(PbFree)
30 Units / Rail
TIP147G SOT93 (TO218)
(PbFree)
30 Units / Rail
TIP140G TO247
(PbFree)
30 Units / Rail
TIP141G TO247
(PbFree)
30 Units / Rail
TIP142G TO247
(PbFree)
30 Units / Rail
TIP145G TO247
(PbFree)
30 Units / Rail
TIP146G TO247
(PbFree)
30 Units / Rail
TIP147G TO247
(PbFree)
30 Units / Rail
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
http://onsemi.com
3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Typ
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Sustaining Voltage (Note 2)
(IC = 30 mA, IB = 0) TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
60
80
100
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP140, TIP145
(VCE = 40 Vdc, IB = 0) TIP141, TIP146
(VCE = 50 Vdc, IB = 0) TIP142, TIP147
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.0
2.0
2.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 60 V, IE = 0) TIP140, TIP145
(VCB = 80 V, IE = 0) TIP141, TIP146
(VCB = 100 V, IE = 0) TIP142, TIP147
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.0
1.0
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2 0
ÎÎÎ
ÎÎÎ
mA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 5.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1000
500
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Saturation Voltage
(IC = 5.0 A, IB = 10 mA)
(IC = 10 A, IB = 40 mA)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.0
3.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BaseEmitter Saturation Voltage
(IC = 10 A, IB = 40 mA)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(sat)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
3.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BaseEmitter On Voltage
(IC = 10 A, VCE = 4.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
3.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Resistive Load (See Figure 1)
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Delay Time
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCC = 30 V, IC = 5.0 A,
IB = 20 mA, Duty Cycle v 2.0%,
IB1 = IB2, RC & RB Varied, TJ = 25_C)
ÎÎÎÎÎ
ÎÎÎÎÎ
td
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
0.15
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Rise Time
ÎÎÎÎÎ
ÎÎÎÎÎ
tr
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
0.55
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Storage Time
ÎÎÎÎÎ
ÎÎÎÎÎ
ts
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
2.5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ms
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Fall Time
ÎÎÎÎÎ
ÎÎÎÎÎ
tf
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
2.5
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎ
ms
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
Figure 1. Switching Times Test Circuit
10
0.2
Figure 2. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
5.0
2.0
0.5
0.1
0.5 1.0 3.0 5.0 10 20
0.2
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+12 V
V1
appox.
-8.0 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
25 ms
0
RB
51 D1
+4.0 V
VCC
-30 V
RC
TUT
8.0 k 40
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
For NPN test circuit reverse diode and voltage polarities.
1.0
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
http://onsemi.com
4
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
5000
0.5
Figure 3. DC Current Gain versus Collector Current
IC, COLLECTOR CURRENT (AMPS)
300
1.0 2.0 3.0 5.0 7.0 10
500
hFE, DC CURRENT GAIN
VCE = 4.0 V
4.0
NPN
TIP140, TIP141, TIP142
PNP
TIP145, TIP146, TIP147
Figure 4. CollectorEmitter Saturation Voltage
5.0
-75
TJ, JUNCTION TEMPERATURE (°C)
0.5
IC = 10 A, IB = 4.0 mA
2.0
3.0
4.0
-75
TJ, JUNCTION TEMPERATURE (°C)
-25 25 75 175
3.6
3.2
2.8
2.4
0.8
Figure 5. BaseEmitter Voltage
2000
1000
TJ = 150°C
25°C
-55°C
IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
125
20,000
1000
2000
3000
5000
10,000
7000
1.0
0.7
0.5
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (VOLTS)
0.5 1.0 2.0 3.0 5.0 7.0 104.00.7
-50 -25 0 25 50 75 100 125 150 175
5.0
-75
2.0
3.0
1.0
0.7
-50 -25 0 25 50 75 100 125 150 175
2.0
1.6
1.2
4.0
-75 -25 25 75 175
3.6
3.2
2.8
2.4
0.8
125
2.0
1.6
1.2
100°C
TJ = 150°C
100°C
25°C
-55°C
VCE = 4.0 V
IC = 5.0 A, IB = 10 mA
IC = 1.0 A, IB = 2.0 mA
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA
IC = 1.0 A, IB = 2.0 mA
VCE = 4.0 V
IC = 10 A
5.0 A
1.0 A
VCE = 4.0 V
IC = 10 A
5.0 A
1.0 A
TYPICAL CHARACTERISTICS
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
http://onsemi.com
5
ACTIVEREGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
Figure 6. ActiveRegion Safe Operating Area
dc
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
2.0
IC, COLLECTOR CURRENT (AMP) (mA)
10
10
0.2
5.0
20
1.0
20
TJ = 150°C
5030
TIP140, 145
3.0
7.0
15 70 100
TIP141, 146
TIP142, 147
IC, COLLECTOR CURRENT (AMPS)
15
10
1.0
2.0
5.0
7.0
Figure 7. Unclamped Inductive Load
L, UNCLAMPED INDUCTIVE LOAD (mH)
0.5 1.0 2.0 5.0 10 20 50 100
100 mJ
INPUT
MPS-U52
50
50
RBB1
1.5k
RBB2
= 100
VBB2 = 0
VBB1 = 10 V
TUT
VCE MONITOR
100 mH
VCC = 20 V
IC
MONITOR
RS = 0.1
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.
INPUT
VOLTAGE
COLLECTOR
CURRENT
1.42 A
VCE(sat)
-20 V
COLLECTOR
VOLTAGE
V(BR)CER
w 7.0 ms (SEE NOTE 1)
5.0 V
0
100 ms
0
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
http://onsemi.com
6
PD, POWER DISSIPATION (WATTS)
PNP
NPN
Figure 9. Magnitude of Common Emitter
SmallSignal ShortCircuit Forward
Current Transfer Ratio
f, FREQUENCY (MHz)
2.0
1.0
10
5.0
100
1.0
3.0 5.0
7.0
2.0 7.0 10
VCE = 10 V
IC = 1.0 A
TJ = 25°C
5.0
4.0
0
1.0
2.0
3.0
Figure 10. FreeAir Temperature Power Derating
TA, FREE-AIR TEMPERATURE (°C)
0 40 80 120 160 200
hfe , SMALL-SIGNAL FORWARD CURRENT
TRANSFER RATIO
20
50
70
PNP
NPN
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
http://onsemi.com
7
PACKAGE DIMENSIONS
SOT93 (TO218)
CASE 340D02
ISSUE E
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
A
D
V
G
K
SL
U
BQ
123
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
C
J
H
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A--- 20.35 --- 0.801
B14.70 15.20 0.579 0.598
C4.70 4.90 0.185 0.193
D1.10 1.30 0.043 0.051
E1.17 1.37 0.046 0.054
G5.40 5.55 0.213 0.219
H2.00 3.00 0.079 0.118
J0.50 0.78 0.020 0.031
K31.00 REF 1.220 REF
L--- 16.20 --- 0.638
Q4.00 4.10 0.158 0.161
S17.80 18.20 0.701 0.717
U4.00 REF 0.157 REF
V1.75 REF 0.069
TO247
CASE 340L02
ISSUE F
N
P
A
K
W
F
D
G
U
E
0.25 (0.010) MYQS
J
H
C
4
123
T
B
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2 PL
3 PL
0.63 (0.025) MTBM
Q
LDIM MIN MAX MIN MAX
INCHESMILLIMETERS
A20.32 21.08 0.800 8.30
B15.75 16.26 0.620 0.640
C4.70 5.30 0.185 0.209
D1.00 1.40 0.040 0.055
E1.90 2.60 0.075 0.102
F1.65 2.13 0.065 0.084
G5.45 BSC 0.215 BSC
H1.50 2.49 0.059 0.098
J0.40 0.80 0.016 0.031
K19.81 20.83 0.780 0.820
L5.40 6.20 0.212 0.244
N4.32 5.49 0.170 0.216
P--- 4.50 --- 0.177
Q3.55 3.65 0.140 0.144
U6.15 BSC 0.242 BSC
W2.87 3.12 0.113 0.123
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
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8
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