CZTA27 NPN HIGH VOLTAGE DARLINGTON TRANSISTOR SOT-223 CASE MAXIMUM RATINGS (T,=25C) Collector-Emitter Voltage VcES Emitter-Base Voltage VEBO Collector Current Ic Power Dissipation Pp Operating and Storage Junction Temperature TJ. T stg Thermal Resistance OJA Central . Semiconductor Corp. DESCRIPTION The CENTRAL SEMICONDUCTOR CZTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely ELECTRICAL CHARACTERISTICS: (T,=25C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO Vcp=50V Ices VoE=50V lIEBO Vep=10V BVcBO Ig=100pA BVCES IG=100pA VCE(SAT) I=100mA, Ig=0.1mA VBE(ON) VoE=5.0V, ic=100mA FE VcE=5.0V, Ic=10mA hFE VcE=5.0V, Io=100mA fT VoE=5.0V, Io=10mA, f=100MHz 408 high gain and high voltage. UNITS 60 Vv 10 Vv 500 mA 2.0 Ww -65 to +150 C 62.5 CW MIN MAX UNITS 100 nA 500 nA 100 nA 60 Vv 60 Vv 1.5 Vv 2.0 Vv 10,000 10,000 125 MHz All Dimensions in Inches (mm) 024(0.61) 031(0.79) TOP VIEW .248(6.30) o-7 264(6.71) .063(1.60) 114(2.90 067(1.70) T2a.10) | 4 001 (0.03) .004(0.10) .130(3.30) .264(6.71) .146(3.71) .287(7.29) 15 15 = -009(0.23) 033(0.84) (013(0.33) MH oat 091 (2.31) .181(4.60) LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR 409