STEALTHt Dual Diode 60 A, 600 V ISL9K3060G3 Description The ISL9K3060G3 is a STEALTH dual diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. www.onsemi.com CATHODE (BOTTOM SIDE METAL) TO-247-3LD CASE 340CK Features * * * * * Stealth Recovery trr = 36 ns (@ IF = 30 A) Max Forward Voltage, VF = 2.4 V (@ TC = 25C) 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is Pb-Free and is RoHS Compliant K A1 Applications * * * * * * ANODE 2 CATHODE ANODE 1 Switch Mode Power Supplies Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode A2 MARKING DIAGRAM $Y&Z&3&K K3060G3 $Y &Z &3 &K K3060G3 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2001 February, 2020 - Rev. 3 1 Publication Order Number: ISL9K3060G3/D ISL9K3060G3 DEVICE MAXIMUM RATINGS (per leg) (TC = 25C unless otherwise noted) Symbol Ratings Unit Repetitive Peak Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V IF(AV) 30 A 60 A Parameter DC Blocking Voltage Average Rectified Forward Current (TC = 125C) Total Device Current (Both Legs) Repetitive Peak Surge Current (20 kHz Square Wave) IFRM 70 A Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) IFSM 325 A PD 200 W EAVL 20 mJ TJ, TSTG -55 to +175 C TL 300 260 C C Power Dissipation Avalanche Energy (1 A, 40 mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10 s Package Body for 10 s, See Techbrief TB334 TPKG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Method Tape Width Quantity ISL9K3060G3 K3060G3 TO-247-3L Tube N/A 30 THERMAL CHARACTERISTICS Parameter Symbol Thermal Resistance Junction to Case RqJC Thermal Resistance Junction to Ambient RqJA Test Conditions TO-247 www.onsemi.com 2 Min Typ Max Unit - - 1.0 C/W - - 30 C/W ISL9K3060G3 ELECTRICAL CHARACTERISTICS (per leg) (TC = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit TC = 25C - - 100 mA TC = 125C - - 1.0 mA TC = 25C - 2.1 2.4 V TC = 125C - 1.7 2.1 V OFF STATE CHARACTERISTICS Instantaneous Reverse Current IR VR = 600 V ON STATE CHARACTERISTICS Instantaneous Forward Voltage VF IF = 30 A DYNAMIC CHARACTERISTICS CJ VR = 10 V, IF = 0 A - 120 - pF Reverse Recovery Time trr IF = 1 A, dI/dt = 100 A/ms, VR = 30 V - 27 35 ns IF = 30 A, dI/dt = 100 A/ms, VR = 30 V - 36 45 ns Reverse Recovery Time trr - 36 - ns Reverse Recovery Current Irr - 2.9 - A Reverse Recovered Charge Qrr IF = 30 A, dIF/dt = 200 A/ms, VR = 390 V, TC = 25C - 55 - nC Reverse Recovery Time trr - 110 - ns Softness Factor (tb/ta) S - 1.9 - Reverse Recovery Current Irr IF = 30 A, dIF/dt = 200 A/ms, VR = 390 V, TC = 125C - 6 - A Reverse Recovered Charge Qrr - 450 - nC Reverse Recovery Time trr - 60 - ns Softness Factor (tb/ta) S - 1.25 - Reverse Recovery Current Irr - 21 - A Reverse Recovered Charge Qrr - 730 - nC dIM/dt - 800 - A/ms Junction Capacitance SWITCHING CHARACTERISTICS Maximum di/dt During tb IF = 30 A, dIF/dt = 1000 A/ms, VR = 390 V, TC = 125C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 ISL9K3060G3 TYPICAL PERFORMANCE CURVES 60 5000 50 150C 40 25C 125C 30 20 100C 10 0 0 0.5 1.0 1.5 2.0 2.5 VF, Forward Voltage (V) 75C 10 1 120 25C 70 60 50 40 30 20 500 600 VR = 390 V, TJ = 125C tb AT IF = 60 A, 30 A, 15 A 80 60 40 ta AT dIF/dt = 200 A/ms, 500 A/ms, 800 A/ms 0 10 20 30 40 IF, Forward Current (A) 50 0 200 60 VR = 390 V, TJ = 125C 18 IRR, Max Reverse Recovery Current (A) 20 dIF/dt = 800 A/ms 16 14 dIF/dt = 500 A/ms 12 10 8 dIF/dt = 200 A/ms 6 0 10 20 30 40 50 ttaa AT AT IIFF == 60 30 A, A, 30 15 A, A, 15 7.5AA 600 800 1000 1200 1400 1600 400 dIF/dt, Current Rate of Change (A/ms) Figure 4. ta and tb Curves vs. dIF/dt Figure 3. ta and tb Curves vs. Forward Current IRR, Max Reverse Recovery Current (A) 400 20 10 4 300 200 100 t, Recovery Times (ns) t, Recovery Times (ns) 100C Figure 2. Reverse Current vs. Reverse Voltage 80 0 125C 100 VR, Reverse Voltage (V) VR = 390 V, TJ = 125C tb AT dIF/dt = 200 A/ms, 500 A/ms, 800 A/ms 90 150C 0.1 100 3.0 Figure 1. Forward Current vs. Forward Voltage 100 175C 1000 IR, Reverse Current (mA) IF, Forward Current (A) 175C 60 30 VR = 390 V, TJ = 125C IF = 60 A 25 20 IF = 30 A IF = 15 A 15 10 5 0 200 IF, Forward Current (A) 400 600 800 1000 1200 1400 1600 dIF/dt, Current Rate of Change (A/ms) Figure 6. Maximum Reverse Recovery Current vs. dIF/dt Figure 5. Maximum Reverse Recovery Current vs. Forward Current www.onsemi.com 4 ISL9K3060G3 2.5 VR = 390 V, TJ = 125C IF = 60 A 2.0 QRR, Reverse Recovered Charge (nC) S, Reverse Recovery Softness Factor TYPICAL PERFORMANCE CURVES (continued) IF = 30 A 1.5 IF = 15 A 1.0 0.5 200 400 600 800 1000 1200 1400 1600 dIF/dt, Current Rate of Change (A/ms) 1200 VR = 390 V, TJ = 125C IF = 60 A 1000 800 IF = 30 A 600 IF = 15 A 400 200 200 400 600 1000 1200 1400 1600 800 dIF/dt, Current Rate of Change (A/ms) Figure 7. Reverse Recovery Softness Factor vs. dIF/dt Figure 8. Reverse Recovered Charge vs. dIF/dt IF(AV), Average Forward Current (A) 800 600 400 200 0 100 1 10 VR, Reverse Voltage (V) 0.1 35 30 25 20 15 10 5 0 115 1.0 125 135 145 165 Figure 10. DC Current Derating Curve Duty Cycle - Descending Order 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 0.01 10-5 155 TC, Case Temperature (C) Figure 9. Junction Capacitance vs. Reverse Voltage ZqJA, Normalized Thermal Impedance CJ, Junction Capacitance (pF) 1000 t1 t2 Notes: Duty Factor: D = t1/t2 Peak TJ = PDM x ZqJA x RqJA + TA Single Pulse 10-4 10-3 10-2 10-1 100 t, Rectangular Pulse Duration (s) Figure 11. Normalized Maximum Transient Thermal Impedance www.onsemi.com 5 101 175 ISL9K3060G3 TEST CIRCUIT AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 Control IF L DUT CURRENT SENSE RG VGE + - MOSFET t1 IF dIF dt trr ta tb VDD 0.25 IRM IRM t2 Figure 13. trr Waveforms and Definitions Figure 12. trr Test Circuit I=1A L = 40 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL) VAVL L R CURRENT SENSE + VDD DUT VDD - IL IL I V Q1 t0 t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms Figure 14. Avalanche Energy Test Circuit STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO-247-3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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