© Semiconductor Components Industries, LLC, 2001
February, 2020 − Rev. 3
1Publication Order Number:
ISL9K3060G3/D
STEALTHt Dual Diode
60 A, 600 V
ISL9K3060G3
Description
The ISL9K3060G3 is a STEALTH dual diode optimized for low
loss performance in high frequency hard switched applications.
The STEALTH family exhibits low reverse recovery current (IRR)
and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode
in power supplies and other power switching applications. The low
IRR and short ta phase reduce loss in switching transistors. The soft
recovery minimizes ringing, expanding the range of conditions under
which the diode may be operated without the use of additional snubber
circuitry. Consider using the STEALTH diode with an SMPS IGBT
to provide the most efficient and highest power density design at lower
cost.
Features
•Stealth Recovery trr = 36 ns (@ IF = 30 A)
•Max Forward Voltage, VF = 2.4 V (@ TC = 25°C)
•600 V Reverse Voltage and High Reliability
•Avalanche Energy Rated
•This Device is Pb−Free and is RoHS Compliant
Applications
•Switch Mode Power Supplies
•Hard Switched PFC Boost Diode
•UPS Free Wheeling Diode
•Motor Drive FWD
•SMPS FWD
•Snubber Diode
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MARKING DIAGRAM
TO−247−3LD
CASE 340CK
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
K3060G3 = Specific Device Code
$Y&Z&3&K
K3060G3
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
ANODE 1
CATHODE
ANODE 2
CATHODE
(BOTTOM SIDE METAL)
K
A2
A1
ISL9K3060G3
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2
DEVICE MAXIMUM RATINGS (per leg) (TC = 25°C unless otherwise noted)
Parameter Symbol Ratings Unit
Repetitive Peak Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR600 V
Average Rectified Forward Current (TC = 125°C) IF(AV) 30 A
Total Device Current (Both Legs) 60 A
Repetitive Peak Surge Current (20 kHz Square Wave) IFRM 70 A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) IFSM 325 A
Power Dissipation PD200 W
Avalanche Energy (1 A, 40 mH) EAVL 20 mJ
Operating and Storage Temperature Range TJ, TSTG −55 to +175 °C
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, See Techbrief TB334
TL
TPKG
300
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Device Device Marking Package Packing Method Tape Width Quantity
ISL9K3060G3 K3060G3 TO−247−3L Tube N/A 30
THERMAL CHARACTERISTICS
Parameter Symbol Test Conditions Min Typ Max Unit
Thermal Resistance Junction to Case RqJC − − 1.0 °C/W
Thermal Resistance Junction to Ambient RqJA TO−247 − − 30 °C/W
ISL9K3060G3
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3
ELECTRICAL CHARACTERISTICS (per leg) (TC = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF STATE CHARACTERISTICS
Instantaneous Reverse Current IRVR = 600 V TC = 25°C− − 100 mA
TC = 125°C− − 1.0 mA
ON STATE CHARACTERISTICS
Instantaneous Forward Voltage VFIF = 30 A TC = 25°C−2.1 2.4 V
TC = 125°C−1.7 2.1 V
DYNAMIC CHARACTERISTICS
Junction Capacitance CJVR = 10 V, IF = 0 A −120 −pF
SWITCHING CHARACTERISTICS
Reverse Recovery Time trr IF = 1 A, dI/dt = 100 A/ms, VR = 30 V −27 35 ns
IF = 30 A, dI/dt = 100 A/ms, VR = 30 V −36 45 ns
Reverse Recovery Time trr IF = 30 A,
dIF/dt = 200 A/ms,
VR = 390 V,
TC = 25°C
−36 −ns
Reverse Recovery Current Irr −2.9 −A
Reverse Recovered Charge Qrr −55 −nC
Reverse Recovery Time trr IF = 30 A,
dIF/dt = 200 A/ms,
VR = 390 V,
TC = 125°C
−110 −ns
Softness Factor (tb/ta) S −1.9 −
Reverse Recovery Current Irr −6−A
Reverse Recovered Charge Qrr −450 −nC
Reverse Recovery Time trr IF = 30 A,
dIF/dt = 1000 A/ms,
VR = 390 V,
TC = 125°C
−60 −ns
Softness Factor (tb/ta) S −1.25 −
Reverse Recovery Current Irr −21 −A
Reverse Recovered Charge Qrr −730 −nC
Maximum di/dt During tbdIM/dt −800 −A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ISL9K3060G3
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4
TYPICAL PERFORMANCE CURVES
Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage
Figure 3. ta and tb Curves vs. Forward Current Figure 4. ta and tb Curves vs. dIF/dt
Figure 5. Maximum Reverse Recovery Current
vs. Forward Current
Figure 6. Maximum Reverse Recovery Current
vs. dIF/dt
IF
, Forward Current (A)
t, Recovery Times (ns)
dIF/dt, Current Rate of Change (A/ms)
t, Recovery Times (ns)
IF
, Forward Current (A)
IRR, Max Reverse Recovery Current (A)
dIF/dt, Current Rate of Change (A/ms)
IRR, Max Reverse Recovery Current (A)
VF
, Forward Voltage (V)
IF, Forward Current (A)
VR, Reverse Voltage (V)
IR, Reverse Current (mA)
10
100
1000
1
0.1
5000
100 200 300 400 500 600
200 400 600 800 1000 1200 1400 1600
ta AT IF = 30 A, 15 A, 7.5 A
200 400 600 800 1000 1200 1400 1600
60
0
10
20
30
40
50
0 0.5 1.0 1.5 2.0 2.5 3.0
100°C
25°C
125°C
150°C
175°C175°C
150°C
125°C
100°C
75°C
25°C
0
20
40
60
80
100
90
70
50
VR = 390 V, TJ = 125°C
tb AT dIF/dt = 200 A/ms, 500 A/ms, 800 A/ms
ta AT dIF/dt = 200 A/ms, 500 A/ms, 800 A/ms
30
10
010 20 30 40 50 60
20
40
60
80
120
100
0
tb AT IF = 60 A, 30 A, 15 A
ta AT IF = 60 A, 30 A, 15 A
VR = 390 V, TJ = 125°C
4
8
10
12
14
18
20
6
16
0 10 2030405060
dIF/dt = 200 A/ms
dIF/dt = 500 A/ms
dIF/dt = 800 A/ms
VR = 390 V, TJ = 125°C
0
5
10
15
20
25
30
IF = 15 A
IF = 60 A
IF = 30 A
VR = 390 V, TJ = 125°C
ISL9K3060G3
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5
TYPICAL PERFORMANCE CURVES (continued)
Figure 7. Reverse Recovery Softness Factor
vs. dIF/dt
Figure 8. Reverse Recovered Charge vs. dIF/dt
Figure 9. Junction Capacitance vs. Reverse
Voltage
Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
VR, Reverse Voltage (V)
CJ, Junction Capacitance (pF)
TC, Case Temperature (°C)
IF(AV), Average Forward Current (A)
dIF/dt, Current Rate of Change (A/ms)
S, Reverse Recovery Softness Factor
dIF/dt, Current Rate of Change (A/ms)
QRR, Reverse Recovered Charge (nC)
0.5
1.0
1.5
2.0
2.5 VR = 390 V, TJ = 125°C
IF = 60 A
IF = 30 A
IF = 15 A
200 400 600 800 1000 1200 1400 1600 200
400
600
800
1000
1200
200 400 600 800 1000 1200 1400 1600
VR = 390 V, TJ = 125°C
IF = 60 A
IF = 30 A
IF = 15 A
400
0
800
600
200
1000
0.1 110
100
5
0
25
30
35
20
10
15
115 125 135 145 155 165 175
0.01
0.1
1.0
10−510−410−310−210−1100101
PDM
t1
t2
Notes:
Duty Factor: D = t1/t2
Peak TJ = PDM x ZqJA x RqJA + TA
t, Rectangular Pulse Duration (s)
ZqJA, Normalized Thermal Impedance
Duty Cycle − Descending Order
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
ISL9K3060G3
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6
TEST CIRCUIT AND WAVEFORMS
Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage
Waveforms
L
MOSFET
CURRENT
SENSE
DUT
+
−
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 Control IF
VGE
RG
VDD
DUT
CURRENT
SENSE
+
−
VDD
VDD
Q1
LR
I = 1 A
L = 40 mH
R < 0.1 W
VDD = 50 V
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL)VAVL
IL
IL
IV
t0t1t
t2
IF
trr
tatb
dIF
dt
0.25 IRM
IRM
t1
t2
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
E
D
L1
E2
(3X) b
(2X) b2
b4
(2X) e
Q
L
0.25 MBAM
A
A1
A2
A
c
B
D1
P1
S
P
E1
D2
2
13
2
DIM MILLIMETERS
MIN NOM MAX
A 4.58 4.70 4.82
A1 2.20 2.40 2.60
A2 1.40 1.50 1.60
b 1.17 1.26 1.35
b2 1.53 1.65 1.77
b4 2.42 2.54 2.66
c 0.51 0.61 0.71
D 20.32 20.57 20.82
D1 13.08 ~ ~
D2 0.51 0.93 1.35
E 15.37 15.62 15.87
E1 12.81 ~ ~
E2 4.96 5.08 5.20
e ~ 5.56 ~
L 15.75 16.00 16.25
L1 3.69 3.81 3.93
P 3.51 3.58 3.65
P1 6.60 6.80 7.00
Q 5.34 5.46 5.58
S 5.34 5.46 5.58
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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TO−247−3LD SHORT LEAD
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