IRF7455
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V
trr Reverse Recovery Time –– – 64 96 ns TJ = 25°C, IF = 2.5A
Qrr Reverse RecoveryCharge ––– 99 1 50 nC di/dt = 100A/µs
Diode Characteristics
2.5
120 A
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 200 mJ
IAR Avalanche Current––– 15 A
EAR Repetitive Avalanche Energy––– 0.25 mJ
Avalanche Characteristics
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 44 ––– ––– S VDS = 10V, ID = 15A
QgTotal Gate Charge –– – 37 56 ID = 15A
Qgs Gate-to-Source Charge ––– 8.9 13 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– 13 20 VGS = 5.0V,
td(on) Turn-On Delay Time ––– 17 ––– VDD = 15V
trRise Time ––– 18 ––– ID = 1.0A
td(off) Turn-Off Delay Time ––– 51 ––– RG = 6.0Ω
tfFall Time ––– 44 ––– VGS = 4.5V
Ciss Input Capacitance ––– 3480 ––– VGS = 0V
Coss Output Capacitance ––– 870 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 100 –– – pF ƒ = 1.0MHz
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance Ω
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 – –– –– – V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.00600.0075 VGS = 10V, ID = 15A
––– 0.0069 0.009 VGS = 4.5V, ID = 12A
––– 0.010 0.020 VGS = 2.8V, ID = 3.5A
VGS(th) Gate Threshold Voltage 0. 6 ––– 2.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 24V, VGS = 0V
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 20 0 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V