PD- 93842B IRF7455 SMPS MOSFET HEXFET(R) Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max ID 30V 0.0075 15A l A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S SO-8 T o p V ie w Absolute Maximum Ratings Symbol VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range Max. Units 30 12 15 12 120 2.5 1.6 0.02 -55 to + 150 V V A W W W/C C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. Units 50 C/W Typical SMPS Topologies l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers Notes through are on page 8 www.irf.com 1 4/20/00 IRF7455 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.029 --- V/C Reference to 25C, ID = 1mA 0.00600.0075 VGS = 10V, ID = 15A 0.0069 0.009 VGS = 4.5V, ID = 12A 0.010 0.020 VGS = 2.8V, ID = 3.5A --- 2.0 V VDS = VGS, ID = 250A --- 20 VDS = 24V, VGS = 0V A --- 100 VDS = 24V, VGS = 0V, T J = 125C --- 200 VGS = 12V nA --- -200 VGS = -12V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 44 --- --- --- --- --- --- --- --- --- --- Typ. --- 37 8.9 13 17 18 51 44 3480 870 100 Max. Units Conditions --- S VDS = 10V, ID = 15A 56 ID = 15A 13 nC VDS = 24V 20 VGS = 5.0V, --- VDD = 15V --- ID = 1.0A ns --- RG = 6.0 --- VGS = 4.5V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. Max. Units --- --- --- 200 15 0.25 mJ A mJ Diode Characteristics IS ISM VSD trr Q rr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- 2.5 A --- --- 120 --- --- --- --- 64 99 1.2 96 150 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.5A, VGS = 0V TJ = 25C, IF = 2.5A di/dt = 100A/s D S www.irf.com IRF7455 1000 1000 VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V TOP TOP 100 100 2.5V 20s PULSE WIDTH TJ = 25 C 10 0.1 1 10 100 2.5V 10 0.1 VDS , Drain-to-Source Voltage (V) 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 150 C TJ = 25 C V DS = 15V 20s PULSE WIDTH 2.6 2.8 3.0 3.2 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 VGS , Gate-to-Source Voltage (V) 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 2.4 20s PULSE WIDTH TJ = 150 C 3.4 ID = 15A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7455 6000 VGS, Gate-to-Source Voltage (V) 5000 C, Capacitance (pF) 12 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 4000 Ciss 3000 2000 Coss 1000 1 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 13 0 10 100 0 20 VDS , Drain-to-Source Voltage (V) 40 60 80 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ISD , Reverse Drain Current (A) VDS = 24V 10 Crss 0 ID = 15A 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 150 C 100 10 TJ = 25 C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2.2 10us 100us 10 1ms 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7455 16 VDS I D , Drain Current (A) VGS RD D.U.T. RG 12 + - VDD 10V Pulse Width 1 s Duty Factor 0.1 % 8 Fig 10a. Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 TC , Case Temperature 150 ( C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7455 R DS(on) , Drain-to -Source On Resistance ( ) R DS (on) , Drain-to-Source On Resistance ( ) 0.008 VGS = 4.5V 0.007 0.006 VGS = 10V 0.005 0 20 40 60 80 100 0.012 0.010 ID = 15A 0.008 0.006 120 2.5 3.0 3.5 4.0 4.5 VGS, Gate -to -Source Voltage (V) ID , Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS QGS .3F D.U.T. + V - DS QGD 500 VG EAS , Single Pulse Avalanche Energy (mJ) 50K .2F 12V VGS 3mA Charge IG ID Current Sampling Resistors Fig 13a&b. Basic Gate Charge Test Circuit and Waveform 15V V (B R )D S S tp L VD S D.U .T RG IA S 20 V tp IAS DRIVER + V - DD 0.0 1 Fig 14a&b. Unclamped Inductive Test circuit and Waveforms 6 A TOP 400 BOTTOM ID 6.7A 9.5A 15A 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 14c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7455 SO-8 Package Details D IM D -B - 5 8 E -A - 1 7 2 5 A 6 3 e 6X 5 H 0.2 5 (.0 10 ) 4 M A M e1 K x 45 -C- 0 .10 (.00 4) B 8X 0 .25 (.01 0) A1 L 8X 6 C 8X M C A S B S N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. M IN M AX .0532 .0688 1 .35 1 .75 .0040 .0098 0 .10 0 .25 B .014 .018 0 .36 0 .46 C .0 075 .0 098 0 .19 0.25 D .1 89 .1 96 4 .80 4.98 E .150 .157 3 .81 3 .99 e1 A M IL LIM E T E R S MAX A1 e IN C H E S M IN .050 B A S IC 1.2 7 B A S IC .025 B A S IC 0.6 35 B A S IC H .2 284 .2 440 K .011 .019 0 .28 5 .80 0 .48 6.20 L 0 .16 .050 0 .41 1.27 0 8 0 8 R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X SO-8 Part Marking www.irf.com 7 IRF7455 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.8mH Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec RG = 25, IAS = 15A. 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