IRF7455
SMPS MOSFET
Typical SMPS Topologies
l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
PD- 93842B
Notes through are on page 8
Absolute Maximum Ratings
Symbol Parameter Max. Units
VDS Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage ± 12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current120
PD @TA = 25°C Maximum Power Dissipation2.5 W
PD @TA = 70°C Maximum Power Dissipation1.6 W
Linear Derating Factor 0.02 W/°C
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Thermal Resistance
HEXFET® Power MOSFET
lHigh Frequency DC-DC Converters
with Synchronous Rectification
Benefits
Applications VDSS RDS(on) max ID
30V 0.0075Ω15A
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lUltra-Low RDS(on) at 4.5V VGS
lLow Charge and Low Gate Impedance to
Reduce Switching Losses
lFully Characterized Avalanche Voltage
and Current
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
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S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V
trr Reverse Recovery Time –– – 64 96 ns TJ = 25°C, IF = 2.5A
Qrr Reverse RecoveryCharge ––– 99 1 50 nC di/dt = 100A/µs
Diode Characteristics
2.5
120 A
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 200 mJ
IAR Avalanche Current––– 15 A
EAR Repetitive Avalanche Energy––– 0.25 mJ
Avalanche Characteristics
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 44 ––– ––– S VDS = 10V, ID = 15A
QgTotal Gate Charge –– – 37 56 ID = 15A
Qgs Gate-to-Source Charge ––– 8.9 13 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge ––– 13 20 VGS = 5.0V,
td(on) Turn-On Delay Time ––– 17 ––– VDD = 15V
trRise Time ––– 18 ––– ID = 1.0A
td(off) Turn-Off Delay Time ––– 51 ––– RG = 6.0Ω
tfFall Time ––– 44 ––– VGS = 4.5V
Ciss Input Capacitance ––– 3480 ––– VGS = 0V
Coss Output Capacitance ––– 870 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 100 –– – pF ƒ = 1.0MHz
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance Ω
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 – –– –– – V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.00600.0075 VGS = 10V, ID = 15A
––– 0.0069 0.009 VGS = 4.5V, ID = 12A
––– 0.010 0.020 VGS = 2.8V, ID = 3.5A
VGS(th) Gate Threshold Voltage 0. 6 ––– 2.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 24V, VGS = 0V
––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage ––– ––– 20 0 VGS = 12V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V
IRF7455
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.5V
10
100
1000
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.5V
10
100
1000
2.4 2.6 2.8 3.0 3.2 3.4
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
15A
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage Fig 8. Maximum Safe Operating Area
1 10 100
0
1000
2000
3000
4000
5000
6000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
g
s
g
d , ds
rss
g
d
oss ds
g
d
Ciss
Coss
Crss
0.1
1
10
100
1000
0.2 0.6 1.0 1.4 1.8 2.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Sin
g
le Pulse
T
T = 150 C
= 25 C
°°
J
A
V , Drain-to-Source Volta
g
e (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
020 40 60 80
0
2
4
6
8
10
12
Q , Total Gate Char
e (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
15A V = 24V
DS
IRF7455
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
25 50 75 100 125 150
0
4
8
12
16
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
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Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
tp
V
(
BR
)
DSS
I
AS
RG
IAS
0.01
Ω
t
p
D.U.T
L
VDS
+
-VDD
DRIVER
A
15V
20V
25 50 75 100 125 150
0
100
200
300
400
500
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
6.7A
9.5A
15A
2.5 3.0 3.5 4.0 4.5
VGS, Gate -to -Source Voltage (V)
0.006
0.008
0.010
0.012
RDS(on), Drain-to -Source On Resistance ( Ω)
ID = 15A
0 20406080100120
I
D , Drain Current (A)
0.005
0.006
0.007
0.008
RDS (on) , Drain-to-Source On Resistance ( Ω)
VGS = 10V
VGS = 4.5V
IRF7455
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SO-8 Package Details
K x 45°
C
8X
L
8X
θ
H
0.25 ( .0 1 0) M A M
A
0 .10 (.00 4)
B 8X
0.2 5 ( .0 10) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOM MENDE D FOOTPRINT
0. 72 (.028 )
8X
1 .78 (.07 0)
8X
6.46 ( .255 )
1.27 ( .0 50 )
3 X
DIM IN CHE S MIL L IME TE RS
MIN MAX MIN MA X
A .0532 .0688 1 .35 1.75
A1 .0040 .0098 0 .10 0.25
B .014 .018 0 .36 0.46
C .00 7 5 .00 9 8 0.1 9 0 . 2 5
D .18 9 .19 6 4.8 0 4 . 9 8
E .150 .157 3 .81 3.99
e .0 5 0 B ASIC 1 .2 7 BAS IC
e 1 .0 2 5 B ASIC 0 .6 3 5 BASIC
H .22 8 4 .24 4 0 5.8 0 6 . 2 0
K .011 .019 0 .28 0.48
L 0.16 .050 0.41 1.27
θ
0 ° 8 ° 0 ° 8 °
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIMEN SIO NS AR E SHOWN IN M IL L IMETERS (IN CH ES ) .
4. OUT L IN E C ONFOR MS TO JED EC OUT L IN E MS-012A A.
DIMENSION DOES NOT INCLUDE M OLD PROTRUSIONS
MOL D PRO T RUSIO NS NOT TO EXCEED 0.25 ( .0 06) .
DIM EN SIONS IS TH E LENG T H OF L EA D FOR S OL D ERING TO A SU BSTR AT E..
5
6
A1
e1
θ
SO-8 Part Marking
IRF7455
8 www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 1.8mH
RG = 25Ω, IAS = 15A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
33 0.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
N OT ES :
1. CONTROLLING DIMENSION : MILLIMETER.
2 . OUTLINE CONFOR MS TO EIA -481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CO NT RO LLING DIMENSION : M ILLIMETER.
2. ALL DIMENS ION S ARE SHO WN IN M ILLIMETERS
(
INCHES
)
.
3. OU TLIN E CO N FORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
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Data and specifications subject to change without notice. 4/00