Medium Power Bipolar Transistor Pin Configuration 1. Emitter 2. Base 3. Collector Features: * * * igh performance, low frequency devices typically with current H ratings 1A. Up to 1W power dissipation Silicon power switching transistors Medium power amplifier and switching applications Absolute Maximum Ratings: (Ta = 25C unless otherwise specified) Characteristic Symbol Value Collector Base Voltage VCBO -100 Collector-Emitter Voltage VCEO -75 Emitter-Base Voltage VEBO -7 Collector Current Continuous IC -2 Base Current IB -1 Power Dissipation at Ta = 25C Derate above 25C Power Dissipation at TC = 25C Derate above 25C PD 1 5.71 10 57.14 Operating Temperature TJ 200 Storage Temperature Range Tstg -65 to +200 Junction to Ambient Rth(j-a) 175 Junction to Case Rth(j-c) 17.5 Unit V A W mW/C C Thermal Resistance C/W www.element14.com www.farnell.com www.newark.com Page <1> 22/10/12 V1.0 Medium Power Bipolar Transistor Electrical Characteristics: (Ta = +25C unless otherwise specified) Parameter Symbol Test Condition Min. Max. Unit Collector Emitter Voltage VCEO IC = 100mA, IB = 0 -75 - V Collector Cut off Current ICEX 5 mA 100 A Emitter Cut off Current IEBO DC Current Gain *hFE VCE = 70V, VBE = 1.5V, TC = 150C VCE = 100V, VBE = 1.5V - VBE = 7V, IC = 0 IC = 1A, VCE = 2V 10 - IC = 0.5A, VCE = 4V 30 130 Collector Emitter Saturation Voltage *VCE (Sat) IC = 50mA, IB = 50mA Base Emitter On Voltage *VBE (On) IC = 50mA, VCE = 4V hfe IC = 50mA,VCE = 4V, f = 10MHz ton VCC = 30V, IC = 500mA, IB1 = 50mA - - 0.7 V 1.1 Dynamic Characteristics Small Signal Current Gain 5 - - Switching Characteristics Turn On Time Turn Off Time toff VCC = 30V, IC = 500mA, IB1 = IB2 = 50mA 100 - 1,000 ns *Pulsed: Pulse Width 30s, Duty Cycle 2% www.element14.com www.farnell.com www.newark.com Page <2> 22/10/12 V1.0 Medium Power Bipolar Transistor TO-39 Metal Can Package Dim. Min. Max. A 8.5 9.39 B 7.74 8.5 C 6.09 6.6 D 0.4 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.7 - L 42 48 Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Part Number Table Description Part Number Transistor, PNP, TO-39 2N5322 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2012. www.element14.com www.farnell.com www.newark.com Page <3> 22/10/12 V1.0