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Page <1> V1.022/10/12
Medium Power Bipolar Transistor
Features:
High performance, low frequency devices typically with current
ratings 1A. Up to 1W power dissipation
Silicon power switching transistors
Medium power amplier and switching applications
Absolute Maximum Ratings:
(Ta = 25°C unless otherwise specied)
Characteristic Symbol Value Unit
Collector Base Voltage VCBO -100
V
Collector-Emitter Voltage VCEO -75
Emitter-Base Voltage VEBO -7
Collector Current Continuous IC-2
A
Base Current IB-1
Power Dissipation at Ta = 25°C
Derate above 25°C PD
1
5.71 W
mW/°C
Power Dissipation at TC = 25°C
Derate above 25°C
10
57.14
Operating Temperature TJ200 °C
Storage Temperature Range Tstg -65 to +200
Thermal Resistance
Junction to Ambient Rth(j-a) 175 °C/W
Junction to Case Rth(j-c) 17.5
Pin Conguration
1. Emitter
2. Base
3. Collector
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Page <2> V1.022/10/12
Medium Power Bipolar Transistor
Parameter Symbol Test Condition Min. Max. Unit
Collector Emitter Voltage VCEO IC = 100mA, IB = 0 -75 - V
Collector Cut off Current ICEX
VCE = 70V, VBE = 1.5V, TC = 150°C
-
5 mA
VCE = 100V, VBE = 1.5V
100 µA
Emitter Cut off Current IEBO VBE = 7V, IC = 0
DC Current Gain *hFE
IC = 1A, VCE = 2V 10 -
-
IC = 0.5A, VCE = 4V 30 130
Collector Emitter Saturation Voltage *VCE (Sat) IC = 50mA, IB = 50mA
-
0.7
V
Base Emitter On Voltage *VBE (On) IC = 50mA, VCE = 4V 1.1
Dynamic Characteristics
Small Signal Current Gain hfe IC = 50mA,VCE = 4V, f = 10MHz 5 - -
Switching Characteristics
Turn On Time ton VCC = 30V, IC = 500mA, IB1 = 50mA
-
100
ns
Turn Off Time toff
VCC = 30V, IC = 500mA,
IB1 = IB2 = 50mA 1,000
Electrical Characteristics:
(Ta = +25°C unless otherwise specied)
*Pulsed: Pulse Width ≤30μs, Duty Cycle ≤2%
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Page <3> V1.022/10/12
Medium Power Bipolar Transistor
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Description Part Number
Transistor, PNP, TO-39 2N5322
Part Number Table
TO-39 Metal Can Package
Dimensions : Millimetres
Dim. Min. Max.
A 8.5 9.39
B 7.74 8.5
C 6.09 6.6
D 0.4 0.53
E - 0.88
F 2.41 2.66
G 4.82 5.33
H 0.71 0.86
J 0.73 1.02
K 12.7 -
L 42° 48°
Pin Conguration
1. Emitter
2. Base
3. Collector