www.element14.com
www.farnell.com
www.newark.com
Page <2> V1.022/10/12
Medium Power Bipolar Transistor
Parameter Symbol Test Condition Min. Max. Unit
Collector Emitter Voltage VCEO IC = 100mA, IB = 0 -75 - V
Collector Cut off Current ICEX
VCE = 70V, VBE = 1.5V, TC = 150°C
-
5 mA
VCE = 100V, VBE = 1.5V
100 µA
Emitter Cut off Current IEBO VBE = 7V, IC = 0
DC Current Gain *hFE
IC = 1A, VCE = 2V 10 -
-
IC = 0.5A, VCE = 4V 30 130
Collector Emitter Saturation Voltage *VCE (Sat) IC = 50mA, IB = 50mA
-
0.7
V
Base Emitter On Voltage *VBE (On) IC = 50mA, VCE = 4V 1.1
Dynamic Characteristics
Small Signal Current Gain hfe IC = 50mA,VCE = 4V, f = 10MHz 5 - -
Switching Characteristics
Turn On Time ton VCC = 30V, IC = 500mA, IB1 = 50mA
-
100
ns
Turn Off Time toff
VCC = 30V, IC = 500mA,
IB1 = IB2 = 50mA 1,000
Electrical Characteristics:
(Ta = +25°C unless otherwise specied)
*Pulsed: Pulse Width ≤30μs, Duty Cycle ≤2%