MAXIMUM RATINGS: (TC=25°C) 2N3713 2N3714
SYMBOL 2N3715 2N3716 UNITS
Collector-Base Voltage VCBO 80 100 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 10 A
Continuous Base Current IB 4.0 A
Power Dissipation PD 150 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 1.17 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICEV V
CE=Rated VCBO, VBE=1.5V 1.0 mA
ICEV V
CE=Rated VCEO, VBE=1.5V, TC=150°C 10 mA
IEBO V
EB=7.0V 5.0 mA
BVCEO IC=200mA (2N3713, 2N3715) 60 V
BVCEO IC=200mA (2N3714, 2N3716) 80 V
VCE(SAT) I
C=5.0A, IB=0.5A (2N3713, 2N3714) 1.0 V
VCE(SAT) I
C=5.0A, IB=0.5A (2N3715, 2N3716) 0.8 V
VBE(SAT) I
C=5.0A, IB=0.5A (2N3713, 2N3714) 2.0 V
VBE(SAT) I
C=5.0A, IB=0.5A (2N3715, 2N3716) 1.5 V
VBE(ON) V
CE=2.0V, IC=3.0A 1.5 V
hFE V
CE=2.0V, IC=1.0A (2N3713, 2N3714) 40 120
hFE V
CE=2.0V, IC=1.0A (2N3715, 2N3716) 50 150
hFE V
CE=2.0V, IC=3.0A (2N3713, 2N3714) 15
hFE V
CE=2.0V, IC=3.0A (2N3715, 2N3716) 30
fT V
CE=10V, IC=0.5A, f=1.0MHz 4.0 MHz
tr I
C=5.0A, IB1=IB2=0.5A 0.4 μs
ts I
C=5.0A, IB1=IB2=0.5A 0.3 μs
tf I
C=5.0A, IB1=IB2=0.5A 0.4 μs
2N3713 2N3715
2N3714 2N3716
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3713, 2N3714,
2N3715, and 2N3716 are silicon NPN power transistors
manufactured by the epitaxial-base process, mounted
in a hermetically sealed metal package designed for
medium speed switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
R2 (18-June 2013)
www.centralsemi.com
2N3713 2N3715
2N3714 2N3716
SILICON
NPN TRANSISTORS
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R2
www.centralsemi.com
R2 (18-June 2013)
