2N3713 2N3714 2N3715 2N3716 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 2N3713 2N3715 80 60 80 V 10 A IB PD 4.0 A 150 W -65 to +200 C 1.17 C/W CHARACTERISTICS: (TC=25C unless otherwise noted) TEST CONDITIONS MIN TYP VCE=Rated VCBO, VBE=1.5V VCE=Rated VCEO, VBE=1.5V, TC=150C IEBO BVCEO BVCEO VEB=7.0V IC=200mA (2N3713, 2N3715) VBE(SAT) VBE(SAT) VBE(ON) hFE hFE hFE hFE fT tr ts tf V 7.0 ELECTRICAL SYMBOL ICEV ICEV VCE(SAT) VCE(SAT) UNITS V VEBO IC TJ, Tstg JC IC=200mA (2N3714, 2N3716) IC=5.0A, IB=0.5A (2N3713, 2N3714) 2N3714 2N3716 100 MAX 1.0 UNITS mA 10 mA 5.0 mA 60 V 80 V 1.0 V IC=5.0A, IB=0.5A (2N3715, 2N3716) IC=5.0A, IB=0.5A (2N3713, 2N3714) 0.8 V 2.0 V IC=5.0A, IB=0.5A (2N3715, 2N3716) VCE=2.0V, IC=3.0A 1.5 V 1.5 V VCE=2.0V, IC=1.0A (2N3713, 2N3714) VCE=2.0V, IC=1.0A (2N3715, 2N3716) 40 120 50 150 VCE=2.0V, IC=3.0A (2N3713, 2N3714) VCE=2.0V, IC=3.0A (2N3715, 2N3716) 15 VCE=10V, IC=0.5A, f=1.0MHz IC=5.0A, IB1=IB2=0.5A 4.0 IC=5.0A, IB1=IB2=0.5A IC=5.0A, IB1=IB2=0.5A 30 MHz 0.4 s 0.3 s 0.4 s R2 (18-June 2013) 2N3713 2N3714 2N3715 2N3716 SILICON NPN TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2) Emitter Case) Collector MARKING: FULL PART NUMBER R2 (18-June 2013) w w w. c e n t r a l s e m i . c o m