MJ15003 (NPN), MJ15004 (PNP) Preferred Device Complementary Silicon Power Transistors The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. * High Safe Operating Area (100% Tested) - * * http://onsemi.com 20 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140 V 250 W 5.0 A @ 50 V For Low Distortion Complementary Designs High DC Current Gain - hFE = 25 (Min) @ IC = 5 Adc IIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III IIIIIIIIIIII IIII IIII III MARKING DIAGRAM MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 140 Vdc Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 5 Vdc Collector Current - Continuous IC 20 Adc Base Current - Continuous IB 5 Adc Emitter Current - Continuous IE 25 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C TJ, Tstg -65 to +200 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Maximum Lead Temperature for Soldering Purposes: 1/16 from Case for 10 seconds Semiconductor Components Industries, LLC, 2002 June, 2002 - Rev. 10 Symbol Max Unit RJC 0.70 C/W TL C 265 1 xxxxx YYWW TO-204AA (TO-3) CASE 1-07 xx A WL, L YY, Y WW, W = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION Device Package Shipping MJ15003 TO-204AA (TO-3) 100 Foams MJ15004 TO-204AA (TO-3) 100 Foams Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MJ15003/D MJ15003 (NPN), MJ15004 (PNP) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III IIIIIIIIIIIIIIIIIIIIIII IIII IIII III III *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 140 - Vdc - - 100 2 Adc mAdc OFF CHARACTERISTICS Collector Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) ICEX Collector Cutoff Current (VCE = 140 Vdc, IB = 0) ICEO - 250 Adc Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO - 100 Adc 5.0 1.0 - - hFE 25 150 Collector Emitter Saturation Voltage (IC = 5 Adc, IB = 0.5 Adc) VCE(sat) - 1.0 Vdc Base Emitter On Voltage (IC = 5 Adc, VCE = 2 Vdc) VBE(on) - 2.0 Vdc fT 2.0 - MHz cob - 1000 pF SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Baised (VCE = 50 Vdc, t = 1 s (non repetitive)) (VCE = 100 Vdc, t = 1 s (non repetitive)) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 5 Adc, VCE = 2 Vdc) DYNAMIC CHARACTERISTICS Current Gain -- Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) IC, COLLECTOR CURRENT (AMP) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 20 15 10 There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on TJ(pk) = 200C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TC = 25C 7 5 3 2 TJ = 200C BONDING WIRE LIMITED THERMAL LIMITATION (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 1 0.7 0.5 0.3 0.2 2 3 5 7 10 20 30 50 70 100 150 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active-Region Safe Operating Area http://onsemi.com 2 MJ15003 (NPN), MJ15004 (PNP) PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. A N C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M -Y- L V SEATING PLANE 2 H G B 1 -Q- 0.13 (0.005) M T Y INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR M http://onsemi.com 3 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 MJ15003 (NPN), MJ15004 (PNP) PowerBase is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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