© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3 1Publication Order Number:
MPS6560/D
MPS6560
Audio Transistor
NPN Silicon
Features
•Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 25 Vdc
Collector−Base Voltage VCBO 25 Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 W
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 W
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junc tion−to−Ambient
(Note 1) RqJA 200 °C/W
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. RqJA is measured with the device soldered into a typical printed circuit board.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
† For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
Device Package Shipping†
MPS6560 TO−92 5,000 Units/Box
MPS6560G TO−92
(Pb−Free) 5,000 Units/Box
MPS6560 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
TO−92
CASE 29−11
STYLE 1
123
MARKING
DIAGRAM
MPS
6560
AYWW G
G
COLLECTOR
3
2
BASE
1
EMITTER
MPS6560
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(IC = 10 mAdc, IB = 0) V(BR)CEO 25 − Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) V(BR)CBO 25 − Vdc
Emitter−Base Breakdown Voltage
(IE = 100 mAdc, IC = 0) V(BR)EBO 5.0 − Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0) ICES − 100 nAdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0) ICBO − 100 nAdc
Emitter Cutoff Current
(VEB(off) = 4.0 Vdc, IC = 0) IEBO − 100 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 1.0 Vdc)
hFE 35
50
50
−
−
200
−
Collector−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − 0.5 Vdc
Base−Emitter On Voltage
(IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − 1.2 Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) fT60 − MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 30 pF
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
MPS6560
http://onsemi.com
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
TO−92 (TO−226)
CASE 29−11
ISSUE AL
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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Phone: 81−3−5773−3850
MPS6560/D
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