NOTES :1.Measured at 1.0MHz and applied reverse volta ge of 4.0V DC.
2.Thermal Resistance Junction to Case.
3.Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1A,I
RR
=0.25A.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
@T
C
=
135 C
@T
J
=100 C
PR1001R thru PR1007R
FEATURES
Fast switching for high efficiency
Glass pas sivated chip
Low reverse leak age current
Low forward voltage drop
High current capability
Plastic ma ter ial has UL flammabili ty classification
94V-0
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color ba nd denotes cath ode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rat i ngs at 25 ambient temperature unle s s otherwise spe c ifie d.
℃
Single ph ase, half wav e, 60Hz, resistive or induc tive load.
For capacitive load, derate current by 20%
PR
1003R
200
140
200
PR
1001R
50
35
50
PR
1007R
1000
700
1000
PR
1002R
100
70
100
PR
1006R
800
560
800
PR
1005R
600
420
600
PR
1004R
400
280
400
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurrent Peak Rev erse Voltage
Maximum RMS Voltage
Maximum DC Blocking Vo ltage
Maximum fo rwar d Voltage at 1.0A DC
Maximum DC Reverse Current
at Rate d DC Blocking Voltage
@T
J
=25 C
1.0
30
1.3
5
50
T
J
Operating Temperature Range
-55 to +15 0
C
T
STG
Storage Temperature Range
-55 to +150
C
Typical Thermal Re sistance (Note 2)
R
0JC
10
C/W
C
J
Typical Junction
Capacitance (Note 1)
10
pF
uA
uA
V
A
A
V
UNIT
V
V
All Dimensions in millimeter
Max.
Min.
DO-41
Dim.
A
D
C
B 25.4 5.20
-
4.10
0.71
2.00 2.70
0.86
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
Maximum Reverse Recovery Time (Note 3)
T
RR
ns
150 300
FAST RECOVERY
GLASS PASSIVATED RECTIFIERS
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Ampere
SEMICONDUCTOR
LITE-ON
REV. 0, Jun-2006, KDEC03