GBU6005 thru GBU610 SYNSEM! SEMICONDUCTOR Features Glass Passivated Single-Phase Bridge Rectifiers Voltage Range 50 to 1000 Volts Forward Current 6.0 Amperes @ Surge overload rating - 175 Amperes peak @ Ideal for printed circuit boards @ Reliable low cost construction utilizing molded plastic technique @ Plastic maternal has Underwriters Laboratory Flammability Classification 947-0 @ Mounting Position: Any 187 (4.7) 148 (3.8) 880 (22.3) 125 (3.2) 445 a0 Zia) CHAMFER - _ F ee = ---y- = = Typ sea 160 (4.1) a | 290 (7.4) 140 (3.5) | | Lt oad 740 (18.8) 08s (2.16) 4 NTA pe 720 (18.3) 066 (1.65) [15)R (782) _ ee + O20R (TYP) SOT 1 J 260 11.52) | } ae rae O45 {1.14} ease aaa | 080 (2.03) oso 1.27) 88011727) \| (065 (1-68) 040 (7.02) 1) 022 56) U ut fof zeae 210 210 210 790 T90 190 (2.33) (5.33) (5.33) (4.83) (4.83) (4.83) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz resistive or indudive bad. For capadtive load, derate current by 2056 Parameter Symbols | GEU6II6 | GaU601 | GBUSI? | GBUBD4 | GBUSDS | GBU60S | GBL6D |] Units Maximum recurrent peak reverse voltage Mae 60 100 200 400 600 B00 qoog Volts Maximum RMS voltage Venus 35 FO 140 280 420 56g Fou Volts Masinum OC blocking voltage Voo Bt) 100 200 400 6oc Beit ade Volts Maximum average fonward dwith heatsink Mote 2) | 6.0 Anne rectified output current @T=100C twithout heatsink) FLU 28 P Peak fonward surge cument, 8.3ms single half sinewave 176.0 Arap superimposed on rated load GEDEC Method) bow . P Max instantaneous fonward voltage drop at 3.0.4 00 VE 4.0 Vat Masinurn OC reverse current 1 =26C 6.0 ae at rated DC blocking voltage per element @@T =1 25C 500.0 Rating for fusing &<8.3rre} Ft 127 Ajsec Typical junction capacitance per element (Note 13 Cc, 5 pF Typical thermal resistance (Mote 2) Rage 22 ai Operating temperature range T, -66 fo +760 oS Storage ternperature range Tess -66 te +760 ay Notes: = 1. Measured at 1.OMHz and applied reverse voltage of4 oy DC 2. Device mounted on 7ommx 7omm x 1.4mm Cu plate heatsink GBU6005 thru GBU610 RATINGS AND CHARACTERISTIC CURVES (T, = 25C unless othensise notech FIG. 2 - MAXIMUM NON-REPETITIVE FIG, 1 - FORWARD CURRENT DERATING CURVE SURGE CURRENT a o 3 2 La o x a z AVERAGE FORWARD CURRENT AMPERES io * o o PEAK FORWARD SURGE CURRENT, AMPERES Ss a0 WITHOUT HEATSINK * 2.0 |_ SINGLE PHASE HALF WAVE 60Hz 40 OR INDUCTIVE 20 | Single Halt-Sine-Wave (JEDEC METHOD) 0.0 a 0 70640 60 a0 wo 0612000~C 140 1 2 5 10 20 50 100 CASE TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG. 3- TYPICAL JUNCTION CAPACITANCE FIG, 4- TYPICAL FORWARD CHARACTERISTICS CAPACITANCE, (pF) INSTANTANEOUS FORWARD CURRENT, (A) Te25 C , f= MHz PULSE 300us O14 on 10 400 100 100 0 O28 O4 O8 O18 10 12 14 16 18 REVERSE VOLTAGE, VOLTS INSTANTANEOUS FORWARD VOLTAGE, VOLTS j FIG, 5- TYPICAL'REVERSE CHARACTERISTICS g Z 8 io) o INSTANTANEOUS REVERSE CURRENT, (wA) of Q 20 40 Co ao 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)