Fea tures
•Ceramic surface mount package
•Hermetically sealed
•Small package minimizes circuit board
area required
•Electrical performance similar to a
2N2222A
•Qualification per MIL-PRF-19500/559
De scrip tion
The JANTX2N6989U is a hermetically
sealed, ceramic surface-mount device,
consisting of four individual silicon NPN
transistors. The 20 pin ceramic package
is ideal for designs where board space
and device weight are important design
considerations.
Typical screening and lot acceptance
tests are provided on page 13-4. The
burn-in condition is VCB = 30 V, PD = 250
mW each transistor, TA = 25o C. Refer
to MIL-PRF-19500/559 for complete
requirements.
When ordering parts without processing,
do not use a JAN prefix.
Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted)
Collector- Base Volt age ............................................. 75 V
Collector- Emitter Volt age ........................................... 50 V
Emitter- Base Volt age .............................................. 6.0 V
Col lec tor Current- Continuous...................................... 800 mA
Op er at ing Junc tion Tem pera ture(TJ) ........................ -65o C to +200o C
Stor age Junc tion Tem pera ture (Tstg) ........................ -65o C to +200o C
Power Dis si pa tion (sin gle tran sis tor, no heat sink) ....................... 0.5 W
Power Dis si pa tion TA = 25o C (four de vices driven equally)...............1.0 W(1)
Iso la tion Volt age ............................................... 500 Vdc
Notes:
(1) Derate linearly 8.57 mW/oC above 25o C.
Prod uct Bul le tin JANTX, JANTXV, 2N6989U
Janu ary 1996
Sur face Mount Quad NPN Tran sis tor
Type JANTX, JANTXV, 2N6989U
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
15-20
Type JANTX, JANTXV, 2N6989U
Elec tri cal Char ac ter ics (TA = 25o C un less oth er wise noted)
SYM BOL PA RAME TER MIN MAX UNITS TEST CON DI TIONS
Off Char ac ter is tics
V(BR)CBO Collector-Base Breakdown Voltage 75 VIC = 10 µA
V(BR)CEO Collector-Emitter Breakdown Voltage 50 VIC = 10 mA(2)
V(BR)EBO Emitter-Base Breakdown Voltage 6VIE = 10 µA
ICBO Collector-Base Cutoff Current 10 nA VCB = 60 V
ICBO2 Collector-Base Cutoff Current 10 µAVCB = 60 V, TA = 150o C
IEBO Emitter-Base Cutoff Current 10 nA VEB = 4 V
On Char ac ter is tics
hFE1 Forward Current Transfer Ratio 50 VCE = 10 V, IC = 0.1 mA
hFE2 Forward Current Transfer Ratio 75 325 VCE = 10 V, IC = 1.0 mA
hFE3 Forward Current Transfer Ratio 100 VCE = 10 V, IC = 10 mA(2)
hFE4 Forward Current Transfer Ratio 100 300 VCE = 10 V, IC = 150 mA(2)
hFE5 Forward Current Transfer Ratio 30 VCE = 10 V, IC = 500 mA(2)
hFE6 Forward Current Transfer Ratio 35 VCE = 10 V, IC = 10 mA, TA = 55o C(2)
VCE(SAT)1 Collector-Emitter Saturation Voltage 0.3 VIC = 150 mA, IB = 15 mA(2)
VCE(SAT)2 Collector-Emitter Saturation Voltage 1.0 VIC = 500 mA, IB = 50 mA(2)
VCE(SAT)3 Collector-Emitter Saturation Voltage 0.45 VIC = 150 mA, IB = 15 mA, TA = 150o C(2)
VBE(SAT)1 Base-Emitter Saturation Voltage 0.6 1.2 VIC = 150 mA, IB = 15 mA(2)
VBE(SAT)2 Base-Emitter Saturation Voltage 2.0 VIC = 500 mA, IB = 50 mA(2)
VBE(SAT)3 Base-Emitter Saturation Voltage 1.4 VIC = 150 mA, IB = 15 mA, TA = 55o C(2)
Small- Signal Char ac ter is tics
hfeMagnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio 2.5 8.0 VCE = 10 V, IC = 20 mA, f = 100 MHz
hfe Small-Signal Short Circuit Forward
Current Transfer Ratio 50 VCE = 10 V, IC = 1 mA, f = 1kHz
Cobo Open Circuit Output Capacitance 8pF VCB = 10 V, IE = 0, 100 kHz ≤ f ≤ 1 MHz
Cibo Input Capacitance 33 pF VEB = 0.5 V, IC = 0, 100 kHz ≤ f ≤ 1 MHz
Switch ing Chara ter is tics
ton Turn-On Time 35 ns VCC = 30 V, IC = 150 mA, IB = 15 mA
toff Turn-Off Time 300 ns VCC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA
Tran sis tor to Tran sis tor Iso la tion
Rt-t Isolation Resistance 10k MΩVt-t = 500 V
(2) Pulsed Test: Pulse Width = 300 µs ±50, 1-2 % Duty Cycle.
Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
15-21
