THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 3.12 oC/W
Rthj-amb Thermal Resistance Junction-ambient Max 70 oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specif ied)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICEX Collector Cut-off
Current (VBE = - 1.5V) for 2N6107 VCE = 80 V
for 2N6111 VCE = 40 V
TC = 150 oC
for 2N6107 VCE = 70 V
for 2N6111 VCE = 30 V
0.1
0.1
2
2
mA
mA
mA
mA
ICEO Collector Cut-off
Current (IB = 0) for 2N6107 VCE = 60 V
for 2N6111 VCE = 20 V 1
1mA
mA
IEBO Emitter Cut-off C urrent
(IC = 0) VEB = 5 V 1 mA
VCEO(sus)∗Collector-emitter
Sustaining Voltage IC = 0.1 A
for 2N6107
for 2N6111 70
30 V
V
VCER(sus)∗Collector-emitter
Sustaining Voltage IC = 0.1 A RBE = 100 Ω
for 2N6107
for 2N6111 80
40 V
V
VCE(sat)∗Collector-emitter
Saturation Voltage IC = 3 A IB = 0.3 A for 2N6107
IC = 2 A IB = 0.2 A for 2N6111
IC = 7 A IB = 3.0 A
1
1
3.5
V
V
V
VBE(on)∗Base-emitter Voltage IC = 3 A VCE = 4 V for 2N6107
IC = 2 A VCE = 4 V for 2N6111
IC = 7 A VCE = 4 V
1.5
1.5
3
V
V
V
hFE∗DC Current Gain IC = 3 A VCE = 4 V for 2N6107
IC = 2 A VCE = 4 V for 2N6111
IC = 7 A VCE = 4 V
30
30
2.3
150
150
hfe Small Signal Current
Gain IC = 0.5 A VCE = 4 V f = 50 KHz 20
fTTransition-Frequency IC = 0.5 A VCE = 4 V 4 MHz
Ccbo Collector-base
Capacitance VCB = 10 V f = 1 MHz 250 pF
∗ P ulsed: P ulse duratio n = 300 µs, duty cy cle 1.5 %.
For PNP types volt ag e and cu rrent values are negativ e.
For characte ristic curves see the bd534 (PNP) se ries.
2N6107/2N6111
2/4