01/2012
AWT6622
HELP4TM UMTS1900 (Band 2)
CDMA/WCDMA 28.6 dBm Linear PAM
DATA SHEET - Rev 2.4
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
Figure 1: Block Diagram
FEATURES
• Mixed-Mode (HSPA, EV-DO compliant)
• 4th Generation HELPTM technology
• HighEfciency(R99waveform):
•40%@POUT = +28.6 dBm
•34%@POUT = +17 dBm
•22%@POUT=+13.5dBm
•24%@POUT = +8 dBm
•13%@POUT=+3.5dBm
• LowQuiescentCurrent:2mA
• LowLeakageCurrentinShutdownMode:<5µA
• InternalVoltageRegulator
• Integrated“daisychainable”directionalcoupler
withCPLIN and CPLOUT port
• Optimizedfora50ΩSystem
• 1.8V Control Logic
• RoHSCompliantPackage,260oCMSL-3
APPLICATIONS
• Band2(PCS)WCDMA/HSPAWirelessDevices
• Bandclass1(PCS)CDMA/EVDOWireless
Devices
PRODUCT DESCRIPTION
The AWT6622 HELP4TM PA is a 4th generation
HELPTM product for UMTS1900 (Band 2) devices
andforCDMA/EVDOdevicesoperatinginthePCS
band.This PA incorporatesANADIGICS’ HELP4TM
technology to deliver exceptional efciency at low
powerlevels andlow quiescentcurrent withoutthe
need for external voltage regulators or converters.
ThedeviceismanufacturedusingadvancedInGaP-
PlusTM HBT technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Threeselectablebiasmodesthatoptimizeefciency
for different output power levels and a shutdown
mode with low leakage current increase handset
talkandstandbytime.A“daisychainable”directional
couplerisintegratedinthemodulethuseliminating
theneedofanexternal coupler.Theself-contained
3 mm x 3 mm x 1 mm surface mount package
incorporatesmatchingnetworksoptimizedforoutput
power, efciency, and linearity in a 50 Ω system.
AWT6622
1
2
3
4
5
10
9
8
7
6
V
BATT
RF
IN
V
MODE2
V
MODE1
V
EN
CPL
OUT
GND
CPL
IN
RF
OUT
V
CC
Bias Control
Voltage Regulation
CPL
GND at Slug (pad)
2Data Sheet - Rev 2.4
01/2012
AWT6622
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
V
BATT
RF
IN
V
MODE2
V
MODE1
V
EN
1
2
3
4
56
7
8
9
10
CPL
OUT
GND
CPL
IN
RF
OUT
V
CC
1
2
3
4
56
7
8
9
10
PIN NAME DESCRIPTION
1 V
BATT
Battery Voltage
2RF
IN
RFInput
3V
MODE2
Mode Control Voltage 2
4 V
MODE1
Mode Control Voltage 1
5V
EN
PAEnableVoltage
6CPL
OUT
CouplerOutput
7GND Ground
8CPL
IN
CouplerInput
9RF
OUT
RFOutput
10 V
CC
SupplyVoltage
3Data Sheet - Rev 2.4
01/2012
AWT6622
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
overtheconditionsdenedintheelectricalspecications.
PARAMETER MIN MAX UNIT
SupplyVoltage(V
CC
) 0 +5 V
Battery Voltage (V
BATT
) 0 +6 V
ControlVoltages(V
MODE1
, V
MODE2
, V
EN
) 0 +3.5 V
RFInputPower(P
IN
) - +10 dBm
StorageTemperature(T
STG
)-40 +150 °C
Notes:
(1) For operation AT +3.2 V, POUT is derated by 0.5 dB.
PARAMETER MIN TYP MAX UNIT COMMENTS
OperatingFrequency(f) 1850 -1910 MHz
SupplyVoltage(V
CC
)+3.2 +3.4 +4.2 V P
OUT
< +28.6 dBm
EnableVoltage(V
EN
)+1.35
0
+1.8
-
+3.1
+0.5 VPA "on"
PA"shutdown"
Mode Control Voltage (V
MODE1
,V
MODE2
)+1.35
0
+1.8
-
+3.1
+0.5 VLowBiasMode
HighBiasMode
WCDMAOutputPower
R99, HPM
HSPA (MPR=0), HPM
R99, MPM
HSPA (MPR=0), MPM
R99, LPM
HSPA (MPR=0), LPM
28.1
(1)
27.1
(1)
17
16
7.5
(1)
6
28.6
27.6
17
16
8
6
-
-
-
-
-
-
dBm 3GPPTS34.121-1,Rel8
TableC.11.1.3,Subtest1
CDMAOutputPower
CDMA2000, HPM
CDMA2000, MPM
CDMA2000, LPM
27.6
(1)
16
6.5
(1)
28.1
16
7
-
-
-
dBm CDMA2000, RC-1
CaseTemperature(T
C
)-30 -+90 °C
4Data Sheet - Rev 2.4
01/2012
AWT6622
Table4:ElectricalSpecications-WCDMAOperation(R99Modulation)
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system)
Notes:
(1) ACLR and Efciency measured at 1880 MHz.
PARAMETER MIN TYP MAX UNIT
COMMENTS
P
OUT
V
MODE1
V
MODE2
Gain
24.5
16
7
26.5
19.5
9.5
29.5
22
12
dB
+28.6 dBm
+17 dBm
+8 dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
ACLR1at5MHzoffset
(1)
-
-
-
-41
-43
-42
-37.5
-37
-37
dBc
+28.6 dBm
+17 dBm
+8 dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
ACLR2at10MHzoffset
-
-
-
-53
-56
-59
-48
-48
-48
dBc
+28.6 dBm
+17 dBm
+8 dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
Efficiency
(1)
36
30
-
20
-
40
34
22
24
13
-
-
-
-
-
%
+28.6 dBm
+17 dBm
+13.5dBm
+8 dBm
+3.5dBm
0 V
1.8 V
1.8 V
1.8 V
1.8 V
0 V
0 V
0 V
1.8 V
1.8 V
QuiescentCurrent(Icq)
LowBiasMode - 2 3.5 mA
throughV
CC
pins 1.8 V 1.8 V
ModeControlCurrent -<0.1 0.15 mA throughV
MODE
pins,V
MODE1,2
= +1.8 V
EnableCurrent -0.04 0.1 mA throughV
EN
pin
BATTCurrent -0.8 1.5 mA throughV
BATT
pin, V
MODE1,2
= +1.8 V
LeakageCurrent -<5 10 µA V
BATT
= +4.2 V, V
CC
= +4.2 V,
V
EN
= 0 V, V
MODE1,2
= 0 V
NoiseinReceiveBand --135 -133 dBm/Hz 1930MHzto1990MHz
Harmonics
2fo
3fo,4fo
-
-
-45
-50
-35
-40 dBc P
OUT
< +28.6 dBm
CouplingFactor -20 -dB
Directivity -20 -dB
CouplerIN_OUT
DaisyChainInsertionLoss -<0.25 -dB 698MHzthrough2620MHz
Pin8-9ShutdownMode
SpuriousOutputLevel
(allspuriousoutputs) - - -70 dBc
P
OUT
< +28.6 dBm
In-bandloadVSWR<5:1
Out-of-bandloadVSWR<10:1
Appliesoveralloperatingconditions
Loadmismatchstresswithno
permanentdegradationorfailure 8:1 - - VSWR Appliesoverfulloperatingrange
5Data Sheet - Rev 2.4
01/2012
AWT6622
Table5:ElectricalSpecications-CDMAOperation(Modulation/CDMA2000,RC-1)
(TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
Notes:
(1) ACLR and Efciency limits at mid-band only.
PARAMETER MIN TYP MAX UNIT
COMMENTS
P
OUT
V
MODE1
V
MODE2
Gain
24.5
16
7
26.5
19.5
9.5
29.5
22
12
dB
P
OUT
= +28.1 dBm
P
OUT
= +16 dBm
P
OUT
= +7 dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
AdjacentChannelPower
at +1.25MHzoffset
PrimaryChannelBW=1.23MHz
AdjacentChannelBW=30kHz
-
-
-
-51
-57
-57
-46.5
-46.5
-46.5
dBc P
OUT
= +28.1 dBm
P
OUT
= +16 dBm
P
OUT
= +7 dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
AdjacentChannelPower
at +1.98MHzoffset
PrimaryChannel=1.23MHz
AdjacentChannel=30kHz
-
-
-
-55
-60
<-60
-53
-53
-53
dBc P
OUT
= +28.1 dBm
P
OUT
= +16 dBm
P
OUT
= +7 dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
Power-AddedEfficiency
34
26
17
37
31
21
-
-
-
%
P
OUT
= +28.1 dBm
P
OUT
= +16 dBm
P
OUT
= +7 dBm
0 V
1.8 V
1.8 V
0 V
0 V
1.8 V
SpuriousOutputLevel
(allspuriousoutputs) - - <-70 dBc
P
OUT
< +28.1 dBm
In-bandloadVSWR<5:1
Out-of-bandloadVSWR<10:1
Appliesoveralloperatingranges
Loadmismatchstresswithno
permanentdegradationorfailure 8:1 - - VSWR Appliesoverfulloperatingrange
6Data Sheet - Rev 2.4
01/2012
AWT6622
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on theANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
Thepowerampliermaybeplacedinashutdownmode
byapplyinglogiclow levels (seeOperatingRanges
table)totheVEN, VMODE1 and VMODE2 voltages.
Bias Modes
The power amplier may be placed in either Low,
Medium or High Bias modes by applying the
appropriatelogiclevel(seeOperatingRangestable)
Table 6: Bias Control
to the VMODEvoltages.TheBias Controltable below
liststherecommendedmodesofoperationforvarious
applications.
Threeoperatingmodesarerecommendedtooptimize
currentconsumption.HighBias/HighPoweroperating
mode is for POUT levels > 17 dBm. At ~17dBm - 7
dBm,thePAshouldbe“ModeSwitched”toMedium
PowerMode.ForPOUTlevels<~8dBm,thePAcanbe
switchedtoLowPowerModeforevenlowerquiescent
currentconsumption.
Figure 3: Evaluation Board Schematic
C4
2.2 µF ceramic
RFIN
1
6
7
10
8
5
4
3
VBATT
VMODE1
RFOUTRFIN
GND
VCC
VEN CPLOUT
V
CC
C1
0.1 µF
V
BATT
VMODE0
VEN
CPLIN
VMODE1
29
VMODE2
C5
2.2 µF
C2
0.1 µF
GND at slug
CPLIN
C6
33 pF
CPLOUT
RFOUT
C3
33 pF
APPLICATION
POUT
LEVELS
(Rel.99)
BIAS
MODE VEN VMODE1 VMODE2 VCC VB AT T
Lowpower
(LowBiasMode) < +8 dBm Low +1.8 V +1.8 V +1.8 V 3.2-4.2V >3.2V
Medpower
(MediumBiasMode)
> 7 dBm
< +17 dBm Low +1.8 V +1.8 V 0 V 3.2-4.2V >3.2V
Highpower
(HighBiasMode) > +17 dBm High +1.8 V 0 V 0 V 3.2-4.2V >3.2V
Shutdown -Shutdown 0 V 0 V 0 V 3.2-4.2V >3.2V
7Data Sheet - Rev 2.4
01/2012
AWT6622
Figure 4: WCDMA Gain (dB) over Temperature
(Vbatt = VCC = 3.4 V)
PERFORMANCE DATA PLOTS:
(R99waveformat1880MHzand50V system)
Figure 5: WCDMA Gain (dB) over Voltage
(TC = 25 8C)
Figure 6: WCDMA PAE (%) over Temperature
(Vbatt = VCC = 3.4 V)
Figure 7: WCDMA PAE (%) over Voltage
(TC = 25 8C)
Figure 8: WCDMA ACRL1 (dBc) over Temperature
(Vbatt = VCC = 3.4 V)
Figure9:WCDMAACLR(dBc)overVoltage
(TC = 25 8C)
0
5
10
15
20
25
0 5 10 15 20 25 30
Gain (dB)
Pout (dBm)
Figure 4: WCDMA Gain (dB) over Temperature
(Vbatt=VCC=3.4V)
-30C3.4Vcc
25C3.4Vcc
90C3.4Vcc
0
5
10
15
20
25
30
0 5 10 15 20 25
30
Gain (dB)
Pout (dBm)
Figure 5: WCDMA Gain (dB) over Voltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
0
10
20
30
40
50
60
0 5 10 15 20 25 30
Efficiency (%)
Pout (dBm)
Figure 6: WCDMA PAE (%) over Temperature
(Vbatt=VCC=3.4V)
-303.4cc
25C3.4Vcc
90C3.4Vcc
0
10
20
30
40
50
60
0 5 10 15 20 25 30
Efficiency
Pout (dBm)
Figure 7: WCDMA PAE (%) over Voltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30
ACLR1(5MHzdBc)
Pout (dBm)
Figure 8: WCDMA ACRL1 (dBc) over Temperature
(Vbatt=VCC=3.4V)
-30C3.4Vcc
25C3.4Vcc
90C3.4Vcc
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30
ACLR1(5MHzdBc)
Pout (dBm)
Figure9:WCDMAACLR1(dBc)overVoltage
(Tc=25C)
25C3.2Vcc
25C3.4Vcc
25C4.2Vcc
8Data Sheet - Rev 2.4
01/2012
AWT6622
Figure 10: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Figure11:BrandingSpecication-M45Package
PACKAGE OUTLINE
Part Number
Pin 1 Identifier
Country Code (CC)
Date Code (YYWW)
6622R
CC
LLLLNN Lot Number
YYWW
9Data Sheet - Rev 2.4
01/2012
AWT6622
PCB AND STENCIL DESIGN GUIDELINE
Figure 12: Recommended PCB Layout Information
10 Data Sheet - Rev 2.4
01/2012
AWT6622
COMPONENT PACKAGING
Figure 13: Carrier Tape
Pin 1
Figure 14: Reel
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
Data Sheet - Rev 2.4
01/2012
11
AWT6622
ORDERING INFORMATION
ORDER NUMBER TEMPERATURE
RANGE
PACKAGE
DESCRIPTION COMPONENT PACKAGING
AWT6622RM45Q7 -30
o
C to +90
o
C
RoHS Compliant 10 Pin
3mmx3mmx1mm
SurfaceMountModule
TapeandReel,2500piecesperReel
AWT6622RM45P9 -30
o
C to +90
o
C
RoHS Compliant 10 Pin
3mmx3mmx1mm
SurfaceMountModule
Partial Tape and Reel