© 2006 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 μA 200 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 μA
VGS = 0 V TJ = 150°C 250 μA
RDS(on) VGS = 10 V, ID = 70 A 18 mΩ
VGS = 15 V, ID = 140A 14 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 200 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 115 A
ID(RMS) External lead current limit 100 A
IDM TC= 25°C, pulse width limited by TJM 280 A
IAR TC= 25°C60A
EAR TC= 25°C 100 mJ
EAS TC= 25°C4J
dv/dt IS≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ V DSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 680 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
MdTerminal torque 1.13/10 Nm/lb.in.
Mounting torque 1.13/10 Nm/lb.in.
Weight 30 g
DS99245E(03/06)
PolarHTTM HiPerFET
Power MOSFET IXFN 140N20P
N-Channel Enhancement Mode
Fast Intrinsic Diode
Features
zInternational standard package
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
zFast intrinsic diode
Advantages
zEasy to mount
zSpace savings
zHigh power density
VDSS = 200 V
ID25 =115 A
RDS(on) ≤≤
≤≤
≤ 18 mΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 150 ns
Either source tab S can be used forsource
current or Kelvin gate return.
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate D = Drain
S = Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 140N20P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 70 A 50 84 S
Ciss 7500 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1630 pF
Crss 280 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 70 A 35 ns
td(off) RG = 3.3 Ω (External) 150 ns
tf90 ns
Qg(on) 240 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 70 A 50 nC
Qgd 110 nC
RthJC 0.22K/W
RthCS 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 140 A
ISM Repetitive 280 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
trr IF = 25 A 200 ns
QRM -di/dt = 100 A/μs 0.6 μC
IRM VR = 100 V 6 A
SOT-227B miniBLOC
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
© 2006 IXYS All rights reserved
IXFN 140N20P
Fig. 2 . Extended Output Charac teristic s
@ 25
º
C
0
30
60
90
120
150
180
210
240
270
300
012345678910
V
D S
- Volts
I
D
- Ampe res
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Charac teristics
@ 150
º
C
0
20
40
60
80
100
120
140
0123456
V
D S
- Volts
I
D
- Am peres
V
GS
= 10 V
9V
8V
5V
6V
7V
Fig. 1. Output Char acteristics
@ 25
º
C
0
20
40
60
80
100
120
140
00.511.522.5
V
D S
- Volts
I
D
- Am peres
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Normalized to I
D
= 70A
Value vs. Junction Temper atur e
0.5
1
1.5
2
2.5
3
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
D S ( o n )
- No rmali zed
I
D
= 140A
I
D
= 70A
V
GS
= 10V
Fig. 5. R
DS(on)
Normalized to
I
D
= 70A Value vs. Drain Current
0.5
1
1.5
2
2.5
3
3.5
4
0 50 100 150 200 250 300
I
D
- Amperes
R
D S ( o n )
- No rmali zed
T
J
= 25
º
C
V
GS
= 10 V
T
J
= 17 5
º
C
V
GS
= 15 V
Fig. 6. Drain Curr ent vs . Case
Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150 175
TC - Degr ees Centigrade
I D - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN 140N20P
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1 MHz
Fig. 1 0 . Gate Cha rge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200 225 250
Q
G
- nanoCou lombs
V
G S
- Volts
V
DS
= 100V
I
D
= 70A
I
G
= 10mA
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
44.555.566.577.58
V
G S
- Volts
I
D
- Am peres
T
J
= 15 0
º
C
25
º
C
-40
º
C
Fig. 8. Trans conductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0 40 80 120 160 200 240
I
D
- Amperes
g
f s - Si em ens
T
J
= -4 0
º
C
25
º
C
150
º
C
Fig. 9 . Source C urrent vs.
Sour ce-To-Drain Voltage
0
50
100
150
200
250
300
350
0.4 0.6 0.8 1 1.2 1.4
V
S D
- Volts
I
S
- Ampe res
T
J
= 150
º
C
T
J
= 25
º
C
Fig . 12. Forwar d-Bias
Safe Oper ating Area
1
10
100
1000
1 10 100 1000
VD S - Volts
I D - Amp eres
100µs
1ms
DC
TJ = 175ºC
TC = 25ºC
RDS(on) Lim it
10ms
25µs
© 2006 IXYS All rights reserved
IXFN 140N20P
Fig. 13. M aximum Trans ient Thermal Resistance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
( t h ) J C
-
ºC / W
IXYS REF: T_140N20P (88) 01-23-06-B.xls
