APT30M75BLL APT30M75SLL 300V 44A 0.075 R POWER MOS 7 MOSFET BLL D3PAK (R) Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg VDSS ID SLL D * Increased Power Dissipation * Easier To Drive * TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT30M75 UNIT 300 Volts 44 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 329 Watts Linear Derating Factor 2.63 W/C VGSM PD TJ,TSTG 176 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 44 1 Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 300 Volts 44 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 22A) TYP MAX 0.075 Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125C) 500 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms A 100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 1-2003 BVDSS Characteristic / Test Conditions 050-7155 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT30M75BLL - SLL Test Conditions Characteristic MIN TYP C iss Input Capacitance Coss Output Capacitance VDS = 25V 771 Reverse Transfer Capacitance f = 1 MHz 43 VGS = 10V 57 VDD = 200V 21 C rss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 44A @ 25C td(off) tf 3 VDD = 200V ID = 44A @ 25C Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 2 INDUCTIVE SWITCHING @ 25C 268 VDD = 200V, VGS = 15V Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ID = 44A, RG = 5 6 ns 20 RG = 0.6 Fall Time nC 13 VGS = 15V Turn-off Delay Time pF 23 RESISTIVE SWITCHING Rise Time UNIT 3018 VGS = 0V 3 MAX 189 INDUCTIVE SWITCHING @ 125C J 402 VDD = 200V VGS = 15V ID = 44A, RG = 5 220 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 44 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID44A, dl S /dt = 100A/s) 416 ns Q rr Reverse Recovery Charge (IS = -ID44A, dl S /dt = 100A/s) 5.9 C dv/ dt Peak Diode Recovery dv/ 176 (Body Diode) 1.3 (VGS = 0V, IS = -ID44A) dt 5 Amps Volts 5 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient TYP 0.38 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25C, L = 1.34mH, RG = 25, Peak IL = 44A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID44A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.30 0.7 0.25 0.5 0.20 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7155 Rev A 1-2003 0.40 0.35 0.15 0.3 Duty Factor D = t1/t2 0.1 0.05 Peak TJ = PDM x ZJC + TC 0.05 0 t1 t2 0.10 10-5 SINGLE PULSE 10-4 C/W 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT30M75BLL - SLL 100 RC MODEL Power (Watts) 0.158 0.189 0.00802 0.165 8.5V 80 70 8V 60 50 7.5 40 30 7V 20 6.5V 10 Case temperature 120 TJ = -55C 100 80 60 40 TJ = +25C 20 0 TJ = +125C 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 NORMALIZED TO = 10V @ I = 22A GS D 1.30 1.20 VGS=10V 1.10 1.00 VGS=20V 0.90 0.80 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT I V D 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 22A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, RDS(ON) vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) V 1.15 45 0.0 -50 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 1-2003 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS(ON) MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE 140 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 6V 0 050-7155 Rev A Junction temp. ( "C) 0.00334 ID, DRAIN CURRENT (AMPERES) 0.0329 VGS =15 &10V 90 APT30M75BLL - SLL 176 20,000 OPERATION HERE LIMITED BY RDS (ON) 10,000 Ciss 100S 10 1mS C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 100 10 16 = 44A 12 VDS=60V VDS=150V VDS=240V 4 0 0 10 20 30 40 50 60 70 80 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1 10 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 8 100 10mS 1 D Coss Crss TC =+25C TJ =+150C SINGLE PULSE I 1,000 200 100 TJ =+150C TJ =+25C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 70 50 V G 60 J DD R 30 G L = 100H 50 = 200V = 5 tr and tf (ns) td(on) and td(off) (ns) V = 200V = 5 T = 125C td(off) 40 DD R T = 125C J L = 100H 20 40 tf 30 tr 20 td(on) 10 10 5 800 15 35 45 55 65 75 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R G SWITCHING ENERGY (J) 1-2003 050-7155 Rev A EON includes diode reverse recovery. 400 200 Eoff 15 15 25 700 Eon L = 100H 5 5 800 = 200V J 0 35 45 55 65 75 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT = 5 T = 125C 600 0 25 25 35 45 55 65 75 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT SWITCHING ENERGY (J) 0 600 500 Eon 400 Eoff 300 V DD I D 200 = 200V = 44A T = 125C J L = 100H EON includes 100 0 diode reverse recovery. 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT30M75BLL - SLL Gate Voltage 10 % 90% Gate Voltage TJ = 125 C td(on) TJ = 125 C td(off) tr Drain Voltage 90% 90% tf Drain Current 5% 5% 10% Drain Voltage 10 % Drain Current 0 Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT30D30B V CE IC V DD G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Drain D PAK Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 5.38 (.212) 6.20 (.244) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 5.45 (.215) BSC {2 Plcs.} Gate Drain Source Source Drain Gate Dimensions in Millimeters (Inches) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 1.98 (.078) 2.08 (.082) 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 1-2003 4.50 (.177) Max. 050-7155 Rev A 0.46 (.018) 0.56 (.022) {3 Plcs} 2.87 (.113) 3.12 (.123)