Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250µA)
On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)
Drain-Source On-State Resistance 2 (VGS = 10V, 22A)
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
050-7155 Rev A 1-2003
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Amps
Ohms
µA
nA
Volts
MIN TYP MAX
300
44 0.075
100
500
±100
35
APT30M75
300
44
176
±30
±40
329
2.63
-55 to 150
300
44
30
1300
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
TO-247
D3PAK
BLL
SLL
APT30M75BLL
APT30M75SLL
300V 44A 0.075ΩΩ
ΩΩ
Ω
• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance •Easier To Drive
• Lower Gate Charge, Qg •TO-247 or Surface Mount D3PAK Package
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
POWER MOS 7 R MOSFET
050-7155 Rev A 1-2003
DYNAMIC CHARACTERISTICS APT30M75BLL - SLL
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID44A)
Reverse Recovery Time (IS = -ID44A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID44A, dlS/dt = 100A/µs)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
µC
V/ns
MIN TYP MAX
44
176
1.3
416
5.9 5
Symbol
RθJC
RθJA
MIN TYP MAX
0.38
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
IS
ISM
VSD
t rr
Q rr
dv/dt
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 200V
ID = 44A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 200V
ID = 44A @ 25°C
RG = 0.6Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 200V, VGS = 15V
ID = 44A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 200V VGS = 15V
ID = 44A, RG = 5Ω
MIN TYP MAX
3018
771
43
57
21
23
13
3
20
2
268
189
402
220
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.34mH, RG = 25Ω, Peak IL = 44A
5dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID44A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
SINGLE PULSE
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
050-7155 Rev A 1-2003
APT30M75BLL - SLLTypical Performance Curves 100
90
80
70
60
50
40
30
20
10
0
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
6V
6.5V
7V
7.5
VGS =15 &10V
8V
8.5V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C
TJ = -55°C
VDS> ID (ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0 5 10 15 20 25 30
0 2 4 6 8 10 12 14 0 20 40 60 80 100 120
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
160
140
120
100
80
60
40
20
0
45
40
35
30
25
20
15
10
5
0
2.5
2.0
1.5
1.0
0.5
0.0
NORMALIZED TO
VGS = 10V @ ID = 22A
ID = 22A
VGS = 10V
0.0329
0.158
0.189
0.00334
0.00802
0.165
Power
(Watts)
Junction
temp. ( ”C)
Case temperature
RC MODEL
050-7155 Rev A 1-2003
APT30M75BLL - SLL
1mS
100µS
TC =+25°C
TJ =+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY RDS (ON)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 300 0 10 20 30 40 50
0 10 20 30 40 50 60 70 80 0.3 0.5 0.7 0.9 1.1 1.3 1.5
176
100
10
1
16
12
8
4
0
VDS=150V
VDS=60V
VDS=240V
ID = 44A
TJ =+150°C
TJ =+25°C
Crss
Ciss
Coss
VDD = 200V
RG = 5Ω
TJ = 125°C
L = 100µH
ID (A) ID (A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A) RG, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
SWITCHING ENERGY (µJ) td(on) and td(off) (ns)
SWITCHING ENERGY (µJ) tr and tf (ns)
10mS
20,000
10,000
1,000
100
10
200
100
10
1
5 15 25 35 45 55 65 75 5 15 25 35 45 55 65 75
5 15 25 35 45 55 65 75 0 5 1015202530 35404550
VDD = 200V
RG = 5Ω
TJ = 125°C
L = 100µH
VDD = 200V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
VDD = 200V
ID = 44A
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
50
40
30
20
10
0
800
600
400
200
0
70
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
050-7155 Rev A 1-2003
APT30M75BLL - SLLTypical Performance Curves
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
TO-247 Package Outline
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052) 5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
Drain
(Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D3PAK Package Outline
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058
Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions
I
C
D.U.T.
APT30D30B
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
10 %
t
d(on)
TJ = 125 C
90%
10 %
5 %
t
r
5 %
Drain Current
Drain Voltage
Gate Voltage
Switching Energy
90%
t
d(off)
90%
tf10%
0
TJ = 125 C
Switching Energy
Gate Voltage
Drain Voltage
Drain Current
