DXT651Q
Document Number: DS38910 Rev: 1 - 2
1 of 6
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July 2016
© Diodes Incorporated
DXT651Q
60V NPN LOW SATURATION POWER TRANSISTOR
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of automotive applications.
Features
BVCEO > 60V
IC = 3A High Continuous Collector Current
ICM up to 6A Peak Pulse Current
2W Power Dissipation
Low Saturation Voltage VCE(SAT) < 300mV @ 1A
Complementary PNP Type: DXT751Q
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.052 grams (Approximate)
Applications
Load Management Functions
Motor Control
DC-DC / DC-AC Converters
Ordering Information (Notes 4 and 5)
Product
Compliance
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
DXT651Q-13
Automotive
13
12
2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
Device Symbol
Top View
Pinout
SOT89
KN2 = Product Type Marking Code
= Manufacturer’s Marking Code
YWW = Date Code Marking
Y = Last Digit of Year (ex: 6 = 2016)
WW = Week Code (01 to 53)
C
E
B
C
E
C
B
KN2
YWW
SOT89
DXT651Q
Document Number: DS38910 Rev: 1 - 2
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July 2016
© Diodes Incorporated
DXT651Q
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
3
A
Peak Pulse Collector Current
ICM
6
A
Peak Base Current
IB
500
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 6)
PD
1
W
(Note 7)
2
Thermal Resistance, Junction to Ambient Air
(Note 6)
RθJA
125
C/W
(Note 7)
62.5
Thermal Resistance, Junction to Leads
(Note 8)
RθJL
6.0
C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
C
Notes: 6. For a device surface mounted on 15mm x 15mm x 0.6mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in steady state condition.
7. Same as note 6, except the device is mounted on 40mm x 40mm x 1.6mm FR-4 PCB.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
025 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
Derating Curve
Temperature (oC)
Max Power Dissipation (W)
100μ 1m 10m 100m 110 100 1k
0
20
40
60
80
100
120
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (oC/W)
Pulse Width (s)
100μ 1m 10m 100m 110 100 1k
1
10
100
Single Pulse. TA =25oC
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
100
100
DXT651Q
Document Number: DS38910 Rev: 1 - 2
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DXT651Q
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
80


V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
60
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
5


V
IE = 100A
Collector-Base Cutoff Current
ICBO


0.1
10
µA
VCB = 60V
VCB = 60V, TA = +100°C
Emitter-Base Cutoff Current
IEBO
0.1
µA
VEB = 4V
ON CHARACTERISTICS (Note 9)
Collector-Emitter Saturation Voltage
VCE(SAT)
0.08
0.23
0.3
0.6
V
V
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
Base-Emitter Saturation Voltage
VBE(SAT)
0.85
1.25
V
IC = 1A, IB = 100mA
Base-Emitter Turn-On Voltage
VBE(ON)
0.8
1
V
VCE = 2V, IC = 1A
DC Current Gain
hFE
70
100
80
40
200
200
185
120
300

VCE = 2V, IC = 50mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 1A
VCE = 2V, IC = 2A
SMALL-SIGNAL CHARACTERISTICS
Transition Frequency
fT
140
200
MHz
VCE = 5V, IC = 100mA, f = 100MHz
Output Capacitance
Cobo

30
pF
VCB = 10V, f = 1MHz
Switching Times
tON
tOFF


35
230

ns
ns
VCC = 10V. IC = 500mA,
IB1 = -IB2 = 50mA
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
0.0
0.5
1.0
1.5
2.0
2.5
0 1 2 3 4 5
V , COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 1 Typical Collector Current vs. Collector-Emitter Voltage
I , COLLECTOR CURRENT (A)
C
I = 2mA
B
I = 4mA
B
I = 6mA
B
I = 8mA
B
I = 10mA
B
0
50
100
150
200
250
300
350
400
450
500
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
Figure 2 Typical DC Current Gain vs. Collector Current
h
,
D
C
C
U
R
R
E
N
T
G
A
I
N
F
E
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 2V
CE
hFE, DC CURRENT GAIN
DXT651Q
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DXT651Q
0
20
40
60
80
100
0 5 10 15 20 25 30
V , REVERSE VOLTAGE (V)
R
Figure 6 Typical Output Capacitance Characteristics
C , OUTPUT CAPACITANCE (pF)
obo
f = 1MHz
0
25
50
75
100
125
150
175
020 40 60 80 100
I , EMITTER CURRENT (mA)
C
Figure 7 Typical Gain-Bandwidth Product vs. Emitter Current
f , GAIN-BANDWIDTH PRODUCT (MHz)
T
V = 2V
f = 100MHz
CE
0
0.1
0.2
0.3
0.4
0.0001
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
,
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
C
E
(
S
A
T
)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I /I = 20
C B
VCE(SAT), COLLECTOR EMITTER SATURATION
VOLTAGE (V)
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
Figure 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
V
,
B
A
S
E
E
M
I
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E
(
V
)
B
E
(
O
N
)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 2V
CE
VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
Figure 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
V
,
B
A
S
E
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E
(
V
)
B
E
(
S
A
T
)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I /I = 20
C B
VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V)
DXT651Q
Document Number: DS38910 Rev: 1 - 2
5 of 6
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© Diodes Incorporated
DXT651Q
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT89
Dim
Min
Max
Typ
A
1.40
1.60
1.50
B
0.50
0.62
0.56
B1
0.42
0.54
0.48
c
0.35
0.43
0.38
D
4.40
4.60
4.50
D1
1.62
1.83
1.733
D2
1.61
1.81
1.71
E
2.40
2.60
2.50
E2
2.05
2.35
2.20
e
-
-
1.50
H
3.95
4.25
4.10
H1
2.63
2.93
2.78
L
0.90
1.20
1.05
L1
0.327
0.527
0.427
z
0.20
0.40
0.30
All Dimensions in mm
Dimensions
Value
(in mm)
C
1.500
G
0.244
X
0.580
X1
0.760
X2
1.933
Y
1.730
Y1
3.030
Y2
1.500
Y3
0.770
Y4
4.530
H1
EH
D1
B
e
c
L
A
D
8° (4X)
D2
E2
z
L1
R0.200
B1
Y4
X2
Y1
X
YY2
Y3
G
C
X1
DXT651Q
Document Number: DS38910 Rev: 1 - 2
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DXT651Q
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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