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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. TIP102 NPN Epitaxial Silicon Darlington Transistor Features * * * * * * Monolithic Construction with Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum) Collector-Emitter Sustaining Voltage Low Collector-Emitter Saturation Voltage Industrial Use Complementary to TIP107 Equivalent Circuit C B TO-220 1 1.Base 2.Collector 3.Emitter R1 R2 R1 10k R2 0.6k E Ordering Information Part Number Top Mark Package Packing Method TIP102 TIP102 TO-220 3L (Single Gauge) Bulk TIP102TU TIP102 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 15 A IB Base Current (DC) 1 A TJ Junction Temperature 150 C -65 to 150 C TSTG Storage Temperature Range (c) 2001 Fairchild Semiconductor Corporation TIP102 Rev. 1.1.0 www.fairchildsemi.com TIP102 -- NPN Epitaxial Silicon Darlington Transistor December 2014 Values are at TC = 25C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TA = 25C) 2 Collector Dissipation (TC = 25C) 80 Unit W Electrical Characteristics(1) Values are at TC = 25C unless otherwise noted. Symbol VCEO(sus) Parameter Conditions Min. Max. Unit Collector-Emitter Sustaining Voltage IC = 30 mA, IB = 0 ICEO Collector Cut-Off Current VCE = 50 V, IB = 0 50 A ICBO Collector Cut-Off Current VCB = 100 V, IE = 0 50 A IEBO Emitter Cut-Off Current 2 mA hFE DC Current Gain VEB = 5 V, IC = 0 VCE = 4 V, IC = 3 A 1000 VCE = 4 V, IC = 8 A 200 V 20000 IC = 3 A, IB = 6 mA 2.0 IC = 8 A, IB = 80 mA 2.5 Base-Emitter On Voltage VCE = 4 V, IC = 8 A 2.8 V Output Capacitance VCB = 10 V, IE = 0, f = 0.1 MHz 200 pF VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Cob 100 V Note: 1. Pulse test: pw 300 s, duty cycle 2%. (c) 2001 Fairchild Semiconductor Corporation TIP102 Rev. 1.1.0 www.fairchildsemi.com 2 TIP102 -- NPN Epitaxial Silicon Darlington Transistor Thermal Characteristics 10k 5 A A 700 600 0.9mA 0.8mA 4 VCE = 4V A 500 A 400 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = 1mA IB = 300A 3 IB = 200A 2 1 1k IB = 100A 100 0.1 0 0 1 2 3 4 5 1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC Current Gain 10k 10k IC = 500 IB Cob[pF], CAPACITANCE VBE(sat), VCE(sat) [mV], SATURATION VOLTAGE Figure 1. Static Characteristic VBE(sat) 1k VCE(sat) 100 0.1 1 10 1k 100 10 1 0.1 100 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 120 100 1ms PC[W], POWER DISSIPATION 100 s 0 10 10 DC s 5m IC[A], COLLECTOR CURRENT 10 Ic[A], COLLECTOR CURRENT 1 TIP100 0.1 TIP101 80 60 40 20 TIP102 0.01 0.1 0 1 10 0 100 VCE[V], COLLECTOR-EMITTER VOLTAGE 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area (c) 2001 Fairchild Semiconductor Corporation TIP102 Rev. 1.1.0 25 Figure 6. Power Derating www.fairchildsemi.com 3 TIP102 -- NPN Epitaxial Silicon Darlington Transistor Typical Performance Characteristics TIP102 -- NPN Epitaxial Silicon Darlington Transistor Physical Dimensions Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (c) 2001 Fairchild Semiconductor Corporation TIP102 Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* (R) TinyBoost TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM TM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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