HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 VDSS TJ = 25C to 150C 300 V VDGR TJ = 25C to 150C; RGS = 1 MW 300 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 35N30 40N30 35 40 A A IDM TC = 25C, pulse width limited by TJM 35N30 40N30 140 160 A A IAR TC = 25C 35N30 40N30 35 40 A A 30 mJ 5 V/ns TC = 25C dv/dt IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W PD TC = 25C 300 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight Symbol TO-204 = 18 g, TO-247 = 6 g Test Conditions VDSS VGS = 0 V, ID = 250 mA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = 0.8 * VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2 V 4 V 100 nA TJ = 25C TJ = 125C 200 1 mA mA 35N30 FH40N30 FM40N30 Pulse test, t 300 ms, duty cycle d 2 % 0.100 0.085 0.088 VGS = 10 V, ID = 0.5 ID25 IXYS reserves the right to change limits, test conditions, and dimensions. C1 - 116 RDS(on) 35 A 100 mW 40 A 85 mW 40 A 88 mW trr 200 ns Maximum Ratings EAR 300 V 300 V 300 V ID25 W W W TO-247 AD (IXFH) (TAB) TO-204 AE (IXFM) G D G = Gate, S = Source, D = Drain, TAB = Drain Features * * * * International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic Rectifier Applications * * * * * * * * DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages * Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) * Space savings * High power density 91523F (07/00) (c) 2000 IXYS All rights reserved IXFH 35N30 IXFM 35N30 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 22 25 S 4800 pF 745 pF 280 pF 20 30 ns tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 60 90 ns td(off) RG = 2 W (External) 75 100 ns 45 90 ns 177 200 nC 28 50 78 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 ID25 Qgd RthJC RthCK Dim. Millimeter Min. Max. 0.780 0.800 0.819 0.845 nC C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 105 nC E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 0.42 K/W G H 1.65 2.13 4.5 0.065 0.084 0.177 K/W J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 Symbol Test Conditions IS VGS = 0 V 35N30 40N30 35 40 A A ISM Repetitive; pulse width limited by TJM 35N30 40N30 140 160 A A VSD IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % 1.5 V t rr IF = IS, -di/dt = 100 A/ms, VR = 100 V 200 350 ns ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AE (IXFM) Outline Dim. A B C D E F G H J K Q R (c) 2000 IXYS All rights reserved Inches Min. Max. 19.81 20.32 20.80 21.46 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 25C TJ = 125C TO-247 AD (IXFH) Outline A B 0.25 Source-Drain Diode IXFH 40N30 IXFM 40N30 Millimeter Min. Max. 38.61 39.12 - 22.22 6.40 11.40 1.45 1.60 1.52 3.43 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 26.66 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. 1.520 1.540 - 0.875 0.252 0.449 0.057 0.063 0.060 0.135 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.050 C1 - 117 IXFH 35N30 IXFM 35N30 C1 - 118 IXFH 40N30 IXFM 40N30 (c) 2000 IXYS All rights reserved IXFH 35N30 IXFM 35N30 Fig.7 Gate Charge Characteristic Curve IXFH 40N30 IXFM 40N30 Fig.8 Forward Bias Safe Operating Area 10 VDS = 150V 10s 100 Limited by RDS(on) ID = 21A 8 ID - Amperes VGE - Volts IG = 10mA 6 4 100s 1ms 10 10ms 2 100ms 0 1 0 25 50 75 100 125 150 175 200 1 10 Gate Charge - nCoulombs VDS - Volts Fig.9 Capacitance Curves 4500 Fig.10 Source Current vs. Source 80 Ciss 70 4000 60 3500 ID - Amperes Capacitance - pF 300 100 f = 1 MHz VDS = 25V 3000 2500 2000 1500 1000 500 5 40 TJ = 25C 20 Crss 10 10 15 20 0 0.0 25 TJ = 125C 30 Coss 0 0 50 0.2 Vds - Volts 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved C1 - 119