TSAL4400
Document Number 81006
Rev. 1.5, 08-Mar-05
Vishay Semiconductors
www.vishay.com
1
94 8488
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
Description
TSAL4400 is a high efficiency infrared emitting diode
in GaAlAs on GaAs technology, molded in clear, blue-
grey tinted plastic packages.
In comparison with the standard GaAs on GaAs tech-
nology these emitters achieve about 100 % radiant
power improvement at a similar wavelength.
The forward voltages at low current and at high pulse
current roughly correspond to the low values of the
standard technology. Therefore these emitters are
ideally suitable as high performance replacements of
standard emitters.
Features
• Extra high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1 (∅ 3 mm) package
• Angle of half intensity ϕ = ± 25°
• Peak wavelength λp = 940 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared remote control units
Free air transmission systems
Infrared source for optical counters and card readers
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Reverse Voltage VR5V
Forward current IF100 mA
Peak Forward Current tp/T = 0.5, tp = 100 µsI
FM 200 mA
Surge Forward Current tp = 100 µsI
FSM 1.5 A
Power Dissipation PV210 mW
Junction Temperature Tj100 °C
Operating Temperature Range Tamb - 55 to + 100 °C
Storage Temperature Range Tstg - 55 to + 100 °C
Soldering Temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C
Thermal Resistance Junction/
Ambient
RthJA 350 K/W
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Document Number 81006
Rev. 1.5, 08-Mar-05
TSAL4400
Vishay Semiconductors
Basic Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Typ. Max Unit
Forward Voltage IF = 100 mA, tp = 20 ms VF1.35 1.6 V
IF = 1 A, tp = 100 µsV
F2.6 3 V
Temp. Coefficient of VFIF = 100 mA TKVF - 1.3 mV/K
Reverse Current VR = 5 V IR10 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj25 pF
Radiant Intensity IF = 100 mA, tp = 20 ms Ie16 30 80 mW/sr
IF = 1.0 A, tp = 100 µsI
e135 240 mW/sr
Radiant Power IF = 100 mA, tp = 20 ms φe35 mW
Temp. Coefficient of φeIF = 20 mA TKφe- 0.6 %/K
Angle of Half Intensity ϕ± 25 deg
Peak Wavelength IF = 100 mA λp940 nm
Spectral Bandwidth IF = 100 mA ∆λ 50 nm
Temp. Coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise Time IF = 100 mA tr800 ns
Fall Time IF = 100 mA tf800 ns
Virtual Source Diameter method: 63 % encircled energy ∅1.9 mm
Figure 1. Power Dissipation vs. Ambient Temperature
0
50
100
150
200
250
P-Power Dissipation ( mW )
V
T
amb
- Ambient Temperature ( °C)
94 7957
RthJA
20 40 60 80 1000
Figure 2. Forward Current vs. Ambient Temperature
020406080
0
50
100
150
200
250
I – Forward Current ( mA)
F
Tamb – Ambient Temperature ( °C )
100
96 11986
RthJA
TSAL4400
Document Number 81006
Rev. 1.5, 08-Mar-05
Vishay Semiconductors
www.vishay.com
3
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Relative Forward Voltage vs. Ambient Temperature
tp– Pulse Duration ( ms )
96 11987
100
101
101
10–1
10–1 100102
10–2
I – Forward Current (A)
F
tp/T=0.01
IFSM =1A(Single Pulse )
0.05
0.1
0.5
1.0
VF- Forward Voltage(V)
13600
10 1
10 0
10 2
10 3
10 4
tp= 100 s
tp/T = 0.001
µ
43210
I - Forward Current ( mA )
F
0.7
0.8
0.9
1.0
1.1
1.2
V - Relative Forward Voltage
Frel
94 7990
I
F
=10mA
Tamb - Ambient Temperature ( °C)
100806040200
Figure 6. Radiant Intensity vs. Forward Current
Figure 7. Radiant Power vs. Forward Current
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
14309
103
101102104
100
0.1
1
10
1000
100
IF– Forward Current ( mA )
I – Radiant Intensity ( mW/sr )
e
- Radiant Power ( mW )
e
IF- Forward Current ( mA )
13602
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
-10 10 500 100
0
0.4
0.8
1.2
1.6
I;
e rel e rel
140
94 7993
I
F
=20mA
Φ
Tamb - Ambient Temperature ( °C)
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Document Number 81006
Rev. 1.5, 08-Mar-05
TSAL4400
Vishay Semiconductors
Package Dimensions in mm
Figure 9. Relative Radiant Power vs. Wavelength
890 940
0
0.25
0.5
0.75
1.0
1.25
– Wavelength ( nm )
990
14291
– Relative Radiant Power
e rel
Φ
IF= 100 mA
λ
Figure 10. Relative Radiant Intensity vs. Angular Displacement
0.4 0.2 0 0.2 0.4 0.6
14328
0.6
0.9
0.8
0°
30°
10
°
20
°
40°
50°
60°
70°
80°
0.7
1.0
I – Relative Radiant Intensity
e rel
95 10913
TSAL4400
Document Number 81006
Rev. 1.5, 08-Mar-05
Vishay Semiconductors
www.vishay.com
5
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It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
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Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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