Philips Semiconductors Preliminary specification Schottky barrier diode 1PS76SB17 FEATURES DESCRIPTION Low forward voltage Pianar Schottky barrier diode encapsulated in a SOD323 very small plastic Low diode capacitance SMD package. ESD > 500 V; Human body model Very small-plastic SMD package. APPLICATIONS e UHF mixers e Sampling circuits * Modulators e Phase detectors. WW. Marking code: S7. The marking bar indicates the cathode. MAM283 a Hi Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT Vr continuous reverse voltage - 4 Vv IF continuous forward current = 30 mA Tsig storage temperature -65 +150 C Tj junction temperature - 100 C ELECTRICAL CHARACTERISTICS Tamp = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Ve forward voitage see Fig.2 lr = 0.1 mA - 300 mv Ip= 1mA 360 450 mV Ip = 10 mA 470 600 mV Ip reverse current Vr =3V; see Fig.3 0.15 0.25 LA Gq diode capacitance f= 1 MHz; V_ = 0 V; see Fig.4 0.8 1 pF f= 1 MHz; Ve = 0.5 V; see Fig.4 0.65 - pF THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rin j-a thermal resistance from junction to ambient _| note 1 450 K/W Note 1. Refer to SOD323 standard mounting conditions. 1996 Oct 14 Philips Semiconductors Preliminary specification Schottky barrier diode 1PS76SB17 GRAPHICAL DATA 102 104 ee la IF (nA) (mA) 103 10 102 1 10 197 1 10? 2 400 600 800 1" 1 ~ VeW) 2 va) 8 (1) Tamp = 100 C. (1) Tam = 100 C. (2) Tame = 60 C. (2) Tam = 60 C. (3) Tamb = 25 C. (3) -Tamp = 25 C. (4) Tam = 40 C. Fig.2 Forward current as a function of forward voltage; typica! values. (4) Tams = -40-C. Fig.3 Reverse current as a function of reverse voltage; typical values. MLC797 0.8 (pF) 0.7 0.6 05 0.4 3 V_eW) 4 f= 1 MHz; Tamp = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Oct 14