BYY53 / BYY54
25A Silicon Power Rectifier Diode
Part no.
Issue 2 – November 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
Description
The BYY53/54 are hermetically sealed 25A-
diodes, which are available in different reverse
voltage classes up to 1500V.
The diodes can be delivered with limited forward
voltage and reverse current differences for
parallel connecting in rectifier stacks and back-
off-diodes
Features
Forward current 25A
Reverse voltage 75V – 1500V
Hermetic press-fit package
Available in different modifications of the
package
Applications
Power supplies
Rectifier diode in car generators
Rectifier bridges/stacks
Back-off-diodes
Pinout details
BYY53: 1 – cathode; 2 - anode
BYY54: 1 – anode; 2 - cathode
Typical application circuit
Six pulse
bridge
connection
~ ~ ~
3 x BYY53-1200
3 x BYY54-1200
+
-
Ordering information
Device
Quantity per box
BYY53-75; …; BYY53-1500
500
BYY54-75; …; BYY54-1500
500
Device marking
Devices are identified by type. Colour of marking: BYY53- black, BYY54 – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYY53………………………………... diode type
400………………………………….. repetitive peak reverse voltage VRRM (in V) 400
1
2
BYY53 / BYY54
Issue 2 – November 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Unit
Test condition
Repetitive
peak
reverse
voltage
BYY53-75
BYY54-75
VRRM
75
V
Tc = 150°C
BYY53-100
BYY54-100
100
BYY53-150
BYY54-150
150
BYY53-200
BYY54-200
200
BYY53-300
BYY54-300
300
BYY53-400
BYY54-400
400
BYY53-500
BYY54-500
500
BYY53-600
BYY54-600
600
BYY53-700
BYY54-700
700
BYY53-800
BYY54-800
800
BYY53-900
BYY54-900
900
BYY53-1000
BYY54-1000
1000
BYY53-1100
BYY54-1100
1100
BYY53-1200
BYY54-1200
1200
BYY53-1300
BYY54-1300
1300
BYY53-1400
BYY54-1400
1400
BYY53-1500
BYY54-1500
1500
Forward current, arithmetic value
IFAV
25
A
Surge forward current
IFSM
425
A
half-sine wave,
10 ms
350
TJ = 175°C half-sine
wave, 10 ms
Maximum rated value
i²dt
900
A²s
half-sine wave,
10 ms
780
TJ = 175°C half-sine
wave, 10 ms
Repetitive peak forward current
IFRM=*IFAV
79
A
f = >15 Hz
Effective forward current
IFRMS
45
A
Junction temperature
TJmax
200
°C
Storage temperature range
Tstg
- 50 to + 175
°C
BYY53 / BYY54
Issue 2 – November 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
Thermal resistance
Parameter
Symbol
Value
Unit
Junction to case
RθJC
1.2
°C/W
Thermal characteristics
Forward current derating diagram
200°C
168°C
0
5
10
15
20
25
30
-50 0 50 100 150 200 250
TC (°C)
IF (A)
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Forward voltage characteristic
0
5
10
15
20
25
30
0,75 0,8 0,85 0,9 0,95 1
VF (V)
IF (A)
BYY53 / BYY54
Issue 2 – November 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test contitions
Forward
voltage
BYY53-75...1200
BYY54-75...1200
VF
-
0.95
1.1
V
IF = 25 A,
measuring time
10ms (half-sine
wave)
BYY53-1300...1500
BYY54-1300...1500
-
1.1
1.15
Forward
voltage
(information
values)
BYY53-75...1200
BYY54-75...1200
VF
-
0.82
-
V
IF = 20 A,
measuring time
10ms (half-sine
wave),TJ = 150°C
BYY53-1300...1500
BYY54-1300...1500
-
0.85
-
BYY53-75...1200
BYY54-75...1200
VF
-
-
1.20
V
IF = 35 A,
BYY53-1300...1500
BYY54-1300...1500
-
-
1.25
Reverse
current
BYY53-75...150
BYY54-75...150
IRRM
-
-
3
mA
TJ = 150°C, at
VRRM
BYY53-200...1500
BYY54-200...1500
-
-
1.5
BYY53-75...400
BYY54-75...400
IRRM
-
-
0.25
mA
at VRRM
BYY53-500...1500
BYY54-500...1500
-
-
0.1
Threshold voltage (information
value)
V(FO)
-
0.66
-
V
TJ = 175°C
Slope resistance (information
value)
rF
-
5.75
-
mΩ
TJ = 175°C
Options: Electrical characteristics for parallel connecting
(at Tamb = 25°C unless otherwise stated)
Option
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test contitions
1
Forward voltage
difference in one
category of forward
voltage
ΔVF
-
-
0.05
V
IF = 25 A, measuring
time 10ms (half-sine
wave)
2
Reverse current in one
category of forward
voltage (only for
BYY53-300…1500 and
BYY54-300…1500)
IR
-
-
0.01
mA
at VRRM
BYY53 / BYY54
Issue 2 – November 2006 5 www.zetex.com
© Zetex Semiconductors plc 2006
Packaging details
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM
Millimeters
Inches
MIN
TYP
MAX
MIN
TYP
MAX
A
15,00
15,50
16,00
0,591
0,610
0,630
A1
5,90
6,10
6,30
0,232
0,240
0,248
A2
2,10
2,30
2,50
0,083
0,091
0,098
b
3,10
3,40
3,70
0,122
0,134
0,146
D
15,50
15,70
15,90
0,610
0,618
0,626
D1
12,75
12,80
12,85
0,502
0,504
0,506
D2
12,30
12,50
12,70
0,484
0,492
0,500
L
3,00
3,50
4,00
0,118
0,138
0,157
Europe
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USA
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Zetex Semiconductors plc
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United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
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