2010-09-13
1
BFR380F
312
NPN Silicon RF Transistor
• High linearity low noise driver amplifier
• Output compression point 19.5 dBm @ 1.8 GHz
• Ideal for oscillators up to 3.5 GHz
• Low noise figure 1.1 dB at 1.8 GHz
• Collector design supports 5V supply voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR380F FCs 1 = B 2 = E 3 = C TSFP-3
Maximum Ratings
Parameter Symbol Value Unit
Collecto r-emitter voltage V
CEO
6 V
Collecto r-emitter voltage V
CES
15
Collector-base voltage V
CBO
15
Emitter-base voltage V
EBO
2
Collector current I
C
80 mA
Base current I
B
14
Total power dissipation1)
T
S
≤ 95°C Ptot 380 mW
Junction temperature T
J
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature T
Stg
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) R
thJS
≤ 145 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note AN077 Thermal Resistance
2010-09-13
2
BFR380F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 5 V, VBE = 0
VCE = 15 V, VBE = 0
ICES
-
-
1
-
30
1000
nA
Collector-base cutoff current
VCB = 5 V, IE = 0 ICBO - - 30
Emitter-base cutoff current
VEB = 1 V, IC = 0 IEBO - 1 500
DC current gain
IC = 40 mA, VCE = 3 V, pulse measured hFE 90 120 160 -
2010-09-13
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BFR380F
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verif ied by random sampling)
Transition frequency
IC = 40 mA, VCE = 3 V, f = 1 GHz fT11 14 -GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb -0.5 0.7 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce -0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 1 -
Minimum noise figure
IC = 8 mA, VCE = 3 V, ZS = ZSopt, f = 1.8 GHz
IC = 8 mA, VCE = 3 V, ZS = ZSopt, f = 3 GHz
NFmin
-
-
1.1
1.6
-
-
dB
Power gain, maximum available1)
IC = 40 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 1.8 GHz
IC = 40 mA, VCE = 3 V, ZS = ZSopt,
ZL = ZLopt, f = 3 GHz
Gma
-
-
13.5
9.5
-
-
Transducer gain
IC = 40 mA, VCE = 3 V, ZS = ZL = 50Ω,
f = 1.8 GHz
f = 3 GHz
|S21e|2
-
-
11
7
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 40 mA, ZS=ZL=50 Ω, f = 1.8 GHz IP3-29 -dBm
1dB compression point at output
IC = 40 mA, VCE = 3V, f = 1.8 GHz
ZS=ZL=50 Ω
ZS = ZSopt, ZL = ZLopt
P-1dB
-
-
17
19.5
-
-
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2010-09-13
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BFR380F
Total power dissipation Ptot = ƒ(TS)
015 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
300
mW
400
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0246810 12 V16
VCB
0
0.2
0.4
0.6
0.8
1
1.2
pF
1.6
Ccb
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5
BFR380F
Third order Intercept Point IP3 = ƒ (IC)
(Output, ZS = ZL = 50 Ω )
VCE = parameter, f = 900 MHz
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1.8GHz
010 20 30 40 50 60 70 mA 90
IC
4
6
8
10
12
14
16
18
20
22
24
26
28
dBm
32
IP3
1V
2V
3V
4V
Transition freque ncy fT= ƒ(IC)
f = 1GHz
VCE = parameter
010 20 30 40 50 60 70 80 mA 100
IC
4
5
6
7
8
9
10
11
12
13
14
GHz
16
fT
5V
3V
2V
1V
0.7V
Power gain Gma, Gms = ƒ(IC)
f = 1.8GHz
VCE = parameter
010 20 30 40 50 60 70 80 mA 100
IC
7
8
9
10
11
12
13
dB
15
G
5V
3V
2V
1V
0.7V
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BFR380F
Powe r Gain Gma, Gms = ƒ(f)
VCE = parameter
00.5 11.5 22.5 33.5 GHz 4.5
f
0
5
10
15
20
25
30
35
dB
45
G
Ic = 40mA
5V
2V
1V
0.7V
Powe r Gain |S21|² = ƒ(f)
VCE = parameter
00.5 11.5 22.5 33.5 GHz 4.5
f
0
5
10
15
20
25
30
dB
40
G
Ic = 40mA
5V
2V
1V
0.7V
Powe r Gain Gma, Gms = ƒ(VCE): 
|S21|² = ƒ(VCE): - - - -
f = parameter
0123456V8
VCE
7
8
9
10
11
12
13
14
15
16
17
18
19
dB
21
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
Ic = 40mA
Power gain Gma, Gms = ƒ (IC)
VCE = 3V
f = parameter
020 40 60 80 mA 120
IC
5
7
9
11
13
15
17
19
dB
22
G
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
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BFR380F
Minimum noise figure NFmin = ƒ(IC)
VCE = 3V, ZS = ZSopt
0 10 20 30 40 50 60 70 80
0
0.5
1
1.5
2
2.5
3
3.5
I
c
[mA]
F [dB]
f = 2.4GHz
f = 0.9GHz
f = 4GHz
f = 1.8GHz
f = 3GHz
Noise figure F = ƒ(IC)
VCE = 3V, f = 1.8 GHz
0 10 20 30 40 50 60 70 80
0
0.5
1
1.5
2
2.5
3
3.5
4
I
c
[mA]
F [dB]
Z
S
= 50Ω
Z
S
= Z
Sopt
Minimum noise figure NFmin = ƒ(f)
VCE = 3V, ZS = ZSopt
Source impedanc e for min.
noise figure vs. frequency
VCE = 3 V, IC = 8.0mA/40.0mA
2010-09-13
8
BFR380F
SPICE GP (Gummel-Poon)
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFR380F SPICE GP model in the internet
in MWO- and ADS-format, which you can import in to these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 10 GHz using typical devices.
The BFR380F SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
2010-09-13
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BFR380F
Package TSFP-3
4
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
±0.05
0.2
3
±0.05
1.2
12
10˚ MAX.
±0.05
0.8
1.2±0.05
±0.04
0.55
±0.05
0.2
±0.05
0.15
±0.05
0.2
0.4
±0.05
0.4
±0.05
0.4
0.45
1.05
0.4 0.4
BCR847BF
Type code
Pin 1
0.2
1.35
0.3
0.7
1.2
1.5
8
Pin 1
Manufacturer
2010-09-13
10
BFR380F
13 September
2010
This datasheet replaces the revision f rom 20 May 2010.
The product itself has not been changed and the device characteristics remain unchanged.
Only the product description and info rmation available in the data sheet has been e xpanded
and updated.
Previous Revision: 20 May 2010
Page Subject (changes since last revision)
5 @ 900 MHz OIP3 curve added
8 SP ICE mod el param eters removed from the datasheet, respective link to the
internet site added
2010-09-13
11
BFR380F
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regardin g the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologie s Office (<www.infineon.com>).
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Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
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Life support devices or systems are intended to be implanted in the human body or
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