RF4E070BN Nch 30V 7A Power MOSFET Datasheet lOutline VDSS 30V RDS(on) at 10V (Max.) 28.6mW RDS(on) at 4.5V (Max.) 40.0mW ID 7A PD 2.0W (6) (5) HUML2020L8 (1) (2) (4) (8) (3) (5) (6) (7) (3) lFeatures (4) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) High Power Small Mold Package (HUML2020L8). 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free Drain Drain Gate Source (5) (6) (7) (8) Drain Drain Drain Source *1 BODY DIODE 5) 100% Rg and UIS Tested lPackaging specifications Packaging lApplication DC/DC converters Type Load switch Taping Reel size (mm) 180 Tape width (mm) 10 Basic ordering unit (pcs) 3,000 Taping code TR Marking HH lAbsolute maximum ratings(Ta = 25C) ,unless otherwise specified Parameter Symbol Value Unit Drain - Source voltage VDSS 30 V Continuous drain current ID *1 7 A 28 A Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 20 V Power dissipation PD *3 2.0 W Tj 150 C Tstg -55 to +150 C Junction temperature Range of storage temperature www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 1/10 2013.04 - Rev.A Data Sheet RF4E070BN lThermal resistance Parameter Symbol Thermal resistance, junction - ambient Values Unit Min. Typ. Max. RthJA *3 - - 62.5 C/W RthJC - - - C/W lElectrical characteristics(Ta = 25C) ,unless otherwise specified Parameter Drain - Source breakdown voltage Breakdown voltage temperature coefficient Symbol V(BR)DSS Conditions VGS = 0V, ID = 1mA V(BR)DSS ID=1mA Tj referenced to 25C Values Unit Min. Typ. Max. 30 - - V - 18 - mV/C Zero gate voltage drain current IDSS VDS = 30V, VGS = 0V - - 1 mA Gate - Source leakage current IGSS VGS = 20V, VDS = 0V - - 100 nA Gate threshold voltage VGS (th) VGS = VDS, ID = 250mA 1.0 - 2.0 V Gate threshold voltage temperature coefficient V(GS)th Tj ID=1mA referenced to 25C - -2.1 - mV/C Static drain - source on - state resistance RDS(on) *4 VGS=10V, ID=7A - 22.0 28.6 VGS=4.5V, ID=7A - 30.8 40.0 f = 1MHz, open drain - 3.2 - W 4.0 - - S Gate input resistannce Transconductance RG gfs *4 VDS=5V, ID=7A mW *1 Limited only by maximum temperature allowed. *2 Pw 10ms, Duty cycle 1% *3 Mounted on a FR4 (40x40x0.8mm) *4 Pulsed www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 2/10 2013.04 - Rev.A Data Sheet RF4E070BN lElectrical characteristics(Ta = 25C) Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance Ciss VGS = 0V - 410 - Output capacitance Coss VDS = 15V - 50 - Reverse transfer capacitance Crss f = 1MHz - 40 - VDD 15V, VGS = 10V - 6 - ID = 3.5A - 8 - RL = 4.29W - 23 - RG = 10W - 5 - Turn - on delay time td(on) *4 tr *4 Rise time Turn - off delay time td(off) *4 tf *4 Fall time Unit pF ns lGate Charge characteristics(Ta = 25C) Parameter Total gate charge Symbol Qg *4 Gate - Source charge Qgs *4 Gate - Drain charge Qgd *4 Conditions VDD 15V, ID=7A VGS = 10V VDD 15V, ID=7A VGS = 4.5V Values Min. Typ. Max. - 8.9 - - 4.6 - - 1.9 - - 1.4 - Unit nC lBody diode electrical characteristics (Source-Drain)(Ta = 25C) Parameter Inverse diode continuous, forward current Forward voltage www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. Symbol IS *1 VSD *4 Conditions Values Unit Min. Typ. Max. Ta = 25C - - 1.67 A VGS = 0V, Is =1.67A - - 1.2 V 3/10 2013.04 - Rev.A Data Sheet RF4E070BN lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 120 PW = 100ms PW = 10ms 10 80 60 40 20 0 0 50 100 150 1 Operation in this area is limited by RDS(on) (VGS = 10V) 0.1 0.01 200 Ta=25C Single Pulse Mounted on a cupper board. (40mm x 40mm x 0.8mm) 0.1 Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 Ta=25C 1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 bottom Single 0.1 0.01 0.001 0.0001 10 Rth(ch-a)=62.5C/W Rth(ch-a)(t)=r(t)xRth(ch-a) Mounted on a cupper board. (40mm x 40mm x 0.8mm) 0.01 1 Ta=25C Single Pulse 100 10 1 0.0001 100 Pulse Width : PW [s] www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 100 Fig.4 Single Pulse Maximum Power dissipation Peak Transient Power : P(W) 10 1 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [C] Normalized Transient Thermal Resistance : r(t) PW = 1ms 100 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] DC Operation 0.01 1 100 Pulse Width : PW [s] 4/10 2013.04 - Rev.A Data Sheet RF4E070BN lElectrical characteristic curves Fig.6 Typical Output Characteristics(II) Fig.5 Typical Output Characteristics(I) 7 7 VGS= 10V VGS= 4.5V 5 VGS= 4.0V 4 3 VGS= 3.0V 2 1 0 0.2 0.4 0.6 0.8 VGS= 4.5V VGS= 4.0V 5 VGS= 3.0V 4 3 2 VGS= 2.5V 1 VGS= 2.5V 0 0 1 0 4 6 8 10 Fig.8 Typical Transfer Characteristics Fig.7 Breakdown Voltage vs. Junction Temperature 100 60 VDS= 10V Pulsed VGS = 0V ID = 1mA Pulsed 10 40 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] 2 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] 20 0 Ta=25C Pulsed VGS= 10V 6 Drain Current : ID [A] Drain Current : ID [A] 6 Ta=25C Pulsed -50 0 50 100 0.1 Ta= 125C Ta= 75C Ta= 25C Ta= -25C 0.01 0.001 150 Junction Temperature : Tj [C] www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 1 0 0.5 1 1.5 2 2.5 3 3.5 Gate - Source Voltage : VGS [V] 5/10 2013.04 - Rev.A Data Sheet RF4E070BN lElectrical characteristic curves Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Transconductance vs. Drain Current 100 VDS = 10V ID = 1mA Pulsed Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 3 2 1 0 -50 0 50 100 VDS= 10V Pulsed 10 1 0.1 0.01 0.001 150 Ta= -25C Ta=25C Ta=75C Ta=125C 0.01 Junction Temperature : Tj [C] 10 100 Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage 60 1 0.8 0.6 0.4 0.2 -25 0 25 50 75 100 125 150 Static Drain - Source On-State Resistance : RDS(on) [mW] 1.2 Drain Current Dissipation : ID/ID max. (%) 1 Drain Current : ID [A] Fig.11 Drain Current Derating Curve 0 0.1 50 ID = 7A 40 ID = 3.5A 30 20 10 0 0 2 4 6 8 10 Gate - Source Voltage : VGS [V] Junction Temperature : Tj [C] www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. Ta=25C Pulsed 6/10 2013.04 - Rev.A Data Sheet RF4E070BN lElectrical characteristic curves Fig.13 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature 50 VGS= 10V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 0.1 1 10 Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] 100 Drain Current : ID [A] 45 40 35 30 25 20 15 10 VGS = 10V ID = 7A Pulsed 5 0 -50 -25 0 25 50 75 100 125 150 Junction Temperature : Tj [C] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Static Drain - Source On-State Resistance : RDS(on) [mW] 100 Ta=125C Ta=75C Ta=25C Ta= -25C 10 1 VGS= 4.5V Pulsed 0.1 1 10 Drain Current : ID [A] www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 7/10 2013.04 - Rev.A Data Sheet RF4E070BN lElectrical characteristic curves Fig.17 Switching Characteristics Fig.16 Typical Capacitance vs. Drain - Source Voltage 1000 10000 Ta=25C VDD= 15V VGS= 10V RG=10W Pulsed tf 100 Coss Crss 10 1 td(off) Ciss Switching Time : t [ns] Capacitance : C [pF] 1000 Ta = 25C f = 1MHz VGS = 0V 0.01 100 td(on) 10 tr 0.1 1 10 1 100 0.01 0.1 1 10 100 Drain Current : ID [A] Drain - Source Voltage : VDS [V] Fig.19 Source Current vs. Source Drain Voltage Fig.18 Dynamic Input Characteristics 100 10 8 Source Current : IS [A] Gate - Source Voltage : VGS [V] VGS=0V Pulsed 6 4 Ta=25C VDD= 15V ID= 7A RG=10W Pulsed 2 0 0 2 4 6 8 Ta=125C Ta=75C Ta=25C Ta= -25C 1 0.1 0.01 10 0 0.5 1 Source-Drain Voltage : VSD [V] Total Gate Charge : Qg [nC] www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 10 8/10 2013.04 - Rev.A Data Sheet RF4E070BN lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 9/10 2013.04 - Rev.A Data Sheet RF4E070BN lDimensions (Unit : mm) b e A1 Lp E Lp1 B HUML2020L8(Single) XM S A B A A Lp2 D b4 b3 b2 b1 b6 Seating plane b9 l1 e1 S l3 S l2 y b7 b8 b5 e Pattern of terminal position areas [Not a recommended pattern of soldering pads] DIM A A1 b b1 b2 b3 b4 D E e Lp Lp1 Lp2 x y DIM b5 b6 b7 b8 b9 e1 l1 l2 l3 MILIMETERS MIN MAX 0.55 0.65 0.00 0.05 0.25 0.35 1.55 1.75 0.95 1.05 0.175 0.20 0.30 1.90 2.10 1.90 2.10 0.65 0.225 0.325 1.05 1.15 0.75 0.85 0.10 0.10 MILIMETERS MIN MAX 0.45 1.75 1.05 0.175 0.30 1.725 0.425 1.15 0.85 MIN 0.022 0.000 0.010 0.061 0.037 0.008 0.075 0.075 0.009 0.041 0.030 MIN - INCHES 0.007 0.026 INCHES 0.007 0.068 MAX 0.026 0.002 0.014 0.069 0.041 0.012 0.083 0.083 0.013 0.045 0.033 0.004 0.004 MAX 0.018 0.069 0.041 0.012 0.017 0.045 0.033 Dimension in mm / inches www.rohm.com (c) 2013 ROHM Co., Ltd. All rights reserved. 10/10 2013.04 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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