Datasheet
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© 2013 ROHM Co., Ltd. All rights reserved.
RF4E070BN
Nch 30V 7A Power MOSFET
Junction temperature
Tj
150
°C
Range of storage temperature
Tstg
-55 to +150
°C
Power dissipation
Gate - Source voltage
VGSS
20
V
PD
*3
2.0
W
Continuous drain current
ID
*1
7
A
Pulsed drain current
ID,pulse
*2
28
A
Drain - Source voltage
VDSS
30
V
Taping code
TR
Marking
HH
lAbsolute maximum ratings(Ta = 25°C) ,unless otherwise specified
Parameter
Symbol
Value
Unit
lPackaging specifications
Type
Packaging
Taping
lApplication
Reel size (mm)
180
DC/DC converters
Tape width (mm)
10
Load switch
Basic ordering unit (pcs)
3,000
lFeatures
lInner circuit
1) Low on - resistance.
2) High Power Small Mold Package (HUML2020L8).
3) Pb-free lead plating ; RoHS compliant
4) Halogen Free
5) 100% Rg and UIS Tested
lOutline
VDSS
30V
HUML2020L8
ID
7A
PD
2.0W
RDS(on) at 4.5V (Max.)
40.0mW
RDS(on) at 10V (Max.)
28.6mW
*1 BODY DIODE
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(7) Drain
(8) Source
(2)
(1)
(4)
(3)
(5)
(6)
(7)
(8)
(2)
(3)
(6)
(1)
(5)
(4)
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2013.04 - Rev.A
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Data Sheet
RF4E070BN
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 Mounted on a FR4 (40×40×0.8mm)
*4 Pulsed
-
S
Transconductance
gfs *4
VDS=5V, ID=7A
4.0
-
-
3.2
-
mW
VGS=4.5V, ID=7A
28.6
-
30.8
40.0
V
Gate threshold voltage
VGS (th)
VGS = VDS, ID = 250mA
1.0
-
2.0
mA
Gate - Source leakage current
IGSS
VGS = 20V, VDS = 0V
-
-
100
nA
Zero gate voltage drain current
IDSS
VDS = 30V, VGS = 0V
-
-
1
Min.
Typ.
Max.
V
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
30
-
-
-
mV/°C
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
lElectrical characteristics(Ta = 25°C) ,unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
Breakdown voltage
temperature coefficient
ΔV(BR)DSS
ΔTj
ID=1mA
referenced to 25°C
-
18
-
mV/°C
Gate input resistannce
RG
W
Gate threshold voltage
temperature coefficient
ΔV(GS)th
ΔTj
ID=1mA
referenced to 25°C
-
-2.1
Static drain - source
on - state resistance
RDS(on)
*4
VGS=10V, ID=7A
-
22.0
f = 1MHz, open drain
Thermal resistance, junction - ambient
RthJA
*3
-
-
62.5
°C/W
RthJC
-
-
-
°C/W
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Data Sheet
RF4E070BN
VGS = 0V, Is =1.67A
-
1.67
A
lGate Charge characteristics(Ta = 25C)
Parameter
Symbol
Conditions
Values
V
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
-
1.2
Ta = 25°C
Forward voltage
VSD
*4
-
Inverse diode continuous,
forward current
IS *1
-
6
-
ns
Rise time
tr
*4
ID = 3.5A
-
8
-
Turn - off delay time
td(off)
*4
RL = 4.29W
-
23
-
Fall time
tf
*4
RG = 10W
-
5
-
Ciss
VGS = 0V
Output capacitance
Coss
VDS = 15V
Turn - on delay time
td(on)
*4
VDD ⋍ 15V, VGS = 10V
-
1.4
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
-
50
Unit
Min.
Typ.
Max.
pF
-
-
410
-
-
40
-
Reverse transfer capacitance
Crss
f = 1MHz
Input capacitance
-
Unit
Min.
Typ.
Max.
Total gate charge
Qg
*4
VDD ⋍ 15V, ID=7A
VGS = 10V
-
8.9
-
nC
VDD ⋍ 15V, ID=7A
VGS = 4.5V
-
4.6
-
Gate - Source charge
Qgs
*4
-
1.9
-
Gate - Drain charge
Qgd
*4
-
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Data Sheet
RF4E070BN
lElectrical characteristic curves
1
10
100
1000
0.0001 0.01 1 100
Ta=25ºC
Single Pulse
0.01
0.1
1
10
100
0.1 1 10 100
Ta=25ºC
Single Pulse
Mounted on a cupper board.
(40mm × 40mm × 0.8mm)
Operation in this area
is limited by RDS(on)
(VGS = 10V)
PW = 100ms
PW = 1ms
PW = 10ms
DC Operation
0
20
40
60
80
100
120
050 100 150 200
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
bottom Single
Ta=25ºC
Rth(ch-a)=62.5ºC/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
Mounted on a cupper board.
(40mm × 40mm × 0.8mm)
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area
Power Dissipation : PD/PD max. [%]
Drain Current : ID [A]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum
Power dissipation
Normalized Transient Thermal Resistance : r(t)
Pulse Width : PW [s] Pulse Width : PW [s]
Peak Transient Power : P(W)
Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]
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Data Sheet
RF4E070BN
lElectrical characteristic curves
Drain Current : ID [A]
0
1
2
3
4
5
6
7
0 0.2 0.4 0.6 0.8 1
Ta=25ºC
Pulsed
VGS= 2.5V
VGS= 10V
VGS= 4.0V
VGS= 3.0V
VGS= 4.5V
0
20
40
60
-50 0 50 100 150
VGS = 0V
ID = 1mA
Pulsed
0.001
0.01
0.1
1
10
100
0 0.5 1 1.5 2 2.5 3 3.5
VDS= 10V
Pulsed
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0
1
2
3
4
5
6
7
0 2 4 6 8 10
VGS= 2.5V
VGS= 10V
VGS= 4.0V
VGS= 3.0V
VGS= 4.5V
Fig.5 Typical Output Characteristics(I)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.6 Typical Output Characteristics(II)
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Fig.7 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : V(BR)DSS [V]
Junction Temperature : Tj [°C]
Fig.8 Typical Transfer Characteristics
Gate - Source Voltage : VGS [V]
Ta=25ºC
Pulsed
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Data Sheet
RF4E070BN
lElectrical characteristic curves
0
1
2
3
-50 0 50 100 150
0.01
0.1
1
10
100
0.001 0.01 0.1 1 10 100
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
VDS= 10V
Pulsed
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
0
10
20
30
40
50
60
0 2 4 6 8 10
ID = 3.5A
ID = 7A
Ta=25ºC
Pulsed
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : VGS(th) [V]
Junction Temperature : Tj [°C]
Fig.10 Transconductance vs. Drain Current
Transconductance : gfs [S]
Drain Current : ID [A]
Fig.11 Drain Current Derating Curve
Drain Current Dissipation
: ID/ID max. (%)
Junction Temperature : Tj [ºC]
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Gate - Source Voltage : VGS [V]
VDS = 10V
ID = 1mA
Pulsed
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Data Sheet
RF4E070BN
lElectrical characteristic curves
0
5
10
15
20
25
30
35
40
45
50
-50 -25 0 25 50 75 100 125 150
VGS = 10V
ID = 7A
Pulsed
1
10
100
0.1 1 10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
VGS= 10V
Pulsed
1
10
100
0.1 1 10
VGS= 4.5V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Drain Current : ID [A]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: RDS(on) [mW]
Drain Current : ID [A]
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Data Sheet
RF4E070BN
lElectrical characteristic curves
1
10
100
1000
10000
0.01 0.1 1 10 100
Coss
Crss
Ciss
Ta = 25ºC
f = 1MHz
VGS = 0V
0
2
4
6
8
10
0246810
Ta=25ºC
VDD= 15V
ID= 7A
RG=10W
Pulsed
0.01
0.1
1
10
100
0 0.5 1
VGS=0V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1
10
100
1000
0.01 0.1 1 10 100
tr
tf
td(on)
td(off)
Ta=25ºC
VDD= 15V
VGS= 10V
RG=10W
Pulsed
Fig.16 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : VDS [V]
Fig.17 Switching Characteristics
Switching Time : t [ns]
Drain Current : ID [A]
Fig.18 Dynamic Input Characteristics
Gate - Source Voltage : VGS [V]
Total Gate Charge : Qg [nC]
Fig.19 Source Current
vs. Source Drain Voltage
Source Current : IS [A]
Source-Drain Voltage : VSD [V]
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Data Sheet
RF4E070BN
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
9/10
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Data Sheet
RF4E070BN
lDimensions (Unit : mm)
Dimension in mm / inches
HUML2020L8(Single)
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
MIN MAX MIN MAX
A 0.55 0.65 0.022 0.026
A1 0.00 0.05 0.000 0.002
b 0.25 0.35 0.010 0.014
b1 1.55 1.75 0.061 0.069
b2 0.95 1.05 0.037 0.041
b3
b4 0.20 0.30 0.008 0.012
D 1.90 2.10 0.075 0.083
E 1.90 2.10 0.075 0.083
e
Lp 0.225 0.325 0.009 0.013
Lp1 1.05 1.15 0.041 0.045
Lp2 0.75 0.85 0.030 0.033
x- 0.10 - 0.004
y - 0.10 - 0.004
MIN MAX MIN MAX
b5 - 0.45 - 0.018
b6 - 1.75 - 0.069
b7 - 1.05 - 0.041
b8
b9 - 0.30 - 0.012
e1
l1 - 0.425 - 0.017
l2 - 1.15 - 0.045
l3 - 0.85 - 0.033
1.725
0.068
0.65
0.026
DIM
MILIMETERS
INCHES
0.175
0.007
DIM
MILIMETERS
INCHES
0.175
0.007
D
E
A
B
A
A1
S
Seating plane
y
S
Lp2
Lp1
S A
b6
b7
b5
l2
l3
Lp
e
b
b4
b3
b2
b1
e
b8
b9
e1
X M B
l1
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Notice
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Notes
The information contained herein is subject to change without notice.
Before you use our Products, please contact our sales representative
and verify the latest specifica-
tions :
Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to var ious factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
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The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
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The Products specified in this document are not designed to be radiation tolerant.
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ROHM shall have no responsibility for any damages or injury arising from non-compliance with
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ROHM has used reasonable care to ensur the accuracy of the information contained in this
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Please use the Products in accordance with any applicable environmental laws and regulations,
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