FZT7053
Document Number DS31895 Rev. 2 - 2 1 of 5
www.diodes.com August 2009
© Diodes Incorporated
A Product Line o
f
Diodes Incorporated
FZT7053
100V NPN Darlington transistor in SOT223
Features
• BVCEO > 100V
• BVCBO > 100V
• Continuous current IC(cont) = 1.5A
• Ultra High Grain
Applications
• Lamp
• Relay
• Solenoid driving
Mechanical Data
• Case: SOT-223
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Matte Tin Finish
• Weight: 0.112 grams (approximate)
Ordering Information
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FZT7053TA FZT7053 7 12 1000
Marking Information
FZT7053 = Product type Marking Code
Top View Device symbol Pin Configuration
SOT-223
FZT7053
Document Number DS31895 Rev. 2 - 2 2 of 5
www.diodes.com August 2009
© Diodes Incorporated
A Product Line o
f
Diodes Incorporated
FZT7053
100V NPN Darlington transistor in SOT223
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 12 V
Continuous Collector Current IC 1.5 A
Peak Pulse Current ICM 1.8 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation at TA = 25°C (Note 1)
Linear derating factor PD 1.0
8.0 W
mW /°C
Power Dissipation at TA = 25°C (Note 2)
Linear derating factor PD 1.25
10 W
mW /°C
Power Dissipation at TA = 25°C (Note 3)
Linear derating factor PD 6.25
50 W
mW /°C
Thermal Resistance, Junction to Ambient (Note 1) R
θ
JA 125 °C/W
Thermal Resistance, Junction to Ambient (Note 2) R
θ
JA 100 °C/W
Thermal Resistance, Junction to Lead (Note 3) R
θ
JL 20 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
2. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
3. Junction to lead (collector Tab). Typical.
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage V
(
BR
)
CBO 100 V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 4) V
(
BR
)
CEO 100 V
IC = 100mA
Emitter-Base Breakdown Voltage V
(
BR
)
EBO 12 V
IE = 100µA
Collector-Base Cutoff Current ICBO <1
100
0.5 nA
µA VCB = 80V
VCB = 80V, Tamb = 100°C
Collector-Emitter Cutoff Current ICES <1
200
0.5 nA
µA VCB = 80V
VCB = 80V, Tamb = 100°C
Emitter Cutoff Current IEBO <1 100 nA VEB = 7V
DC Current Gain (Note 4) hFE 10000
1000
IC = 100mA, VCE = 5V
IC = 1A, VCE = 5V
Collector-Emitter Saturation Voltage (Note 4) VCE
(
SAT
)
1.5 V IC = 100mA, IB = 0.1mA
Base-Emitter Turn-On Voltage (Note 4) VBE
(
ON
)
2.0 mV
IC = 100mA, VCE = 5V
Output Capacitance (Note 4) Cobo 6.0 8.0 pF
VCB = 10V. f = 1MHz
Current Gain-Bandwidth Product (Note 4) fT 200 MHz
VCE = 5V, IC = 100mA
Turn-On Time ton 0.7 µs
VCC = 10V, IC = 100µA
IB1 = -IB2 = 0.1mA
Turn-Off Time toff 2.5 µs
Notes: 1. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
2. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.
3. Junction to lead (collector Tab). Typical.
4. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ≤ 2%
FZT7053
Document Number DS31895 Rev. 2 - 2 5 of 5
www.diodes.com August 2009
© Diodes Incorporated
A Product Line o
f
Diodes Incorporated
FZT7053
100V NPN Darlington transistor in SOT223
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