DATA SH EET
Product specification
Supersedes data of 1996 Oct 02 1997 Nov 24
DISCRETE SEMICONDUCTORS
BYV27 series
Ultra fast low-loss
controlled avalanche rectifiers
handbook, 2 columns
M3D116
1997 Nov 24 2
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
FEATURES
•Glass passivated
•High maximum operating
temperature
•Low leakage current
•Excellent stability
•Guaranteed avalanche energy
absorption capability
•Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM047
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRRM repetitive peak reverse voltage
BYV27-50 −50 V
BYV27-100 −100 V
BYV27-150 −150 V
BYV27-200 −200 V
BYV27-300 −300 V
BYV27-400 −400 V
BYV27-500 −500 V
BYV27-600 −600 V
VRcontinuous reverse voltage
BYV27-50 −50 V
BYV27-100 −100 V
BYV27-150 −150 V
BYV27-200 −200 V
BYV27-300 −300 V
BYV27-400 −400 V
BYV27-500 −500 V
BYV27-600 −600 V
IF(AV) average forward current Ttp =85°C; lead length = 10 mm;
see Figs 2, 3 and 4;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
BYV27-50 to 200 −2.0 A
BYV27-300 and 400 −1.9 A
BYV27-500 and 600 −1.6 A
IF(AV) average forward current Tamb =60°C; printed-circuit board
mounting (see Fig. 25);
see Figs 5, 6 and 7;
averaged over any 20 ms period;
see also Figs 14, 15 and 16
BYV27-50 to 200 −1.30 A
BYV27-300 and 400 −1.25 A
BYV27-500 and 600 −1.10 A
1997 Nov 24 3
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified.
IFRM repetitive peak forward current Ttp =85°C; see Figs 8, 9 and 10
BYV27-50 to 400 −20 A
BYV27-500 and 600 −16 A
IFRM repetitive peak forward current Tamb =60°C;
see Figs 11, 12 and 13
BYV27-50 to 200 −14 A
BYV27-300 and 400 −13 A
BYV27-500 and 600 −11 A
IFSM non-repetitive peak forward current t = 10 ms half sine wave;
Tj=T
j max prior to surge;
VR=V
RRMmax
BYV27-50 to 400 −50 A
BYV27-500 and 600 −40 A
ERSM non-repetitive peak reverse
avalanche energy L = 120 mH; Tj=T
j max prior to
surge; inductive load switched off −20 mJ
Tstg storage temperature −65 +175 °C
Tjjunction temperature see Fig. 17 −65 +175 °C
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF= 2 A; Tj=T
j max;
see Figs 18, 19 and 20
BYV27-50 to 200 −−0.78 V
BYV27-300 and 400 −−0.82 V
BYV27-500 and 600 −−1.00 V
VFforward voltage IF=2A;
see Figs 18, 19 and 20
BYV27-50 to 200 −−0.98 V
BYV27-300 and 400 −−1.05 V
BYV27-500 and 600 −−1.25 V
V(BR)R reverse avalanche breakdown
voltage IR= 0.1 mA
BYV27-50 55 −−V
BYV27-100 110 −−V
BYV27-150 165 −−V
BYV27-200 220 −−V
BYV27-300 330 −−V
BYV27-400 440 −−V
BYV27-500 560 −−V
BYV27-600 675 −−V
I
Rreverse current VR=V
RRMmax;
see Fig. 21 −− 5µA
V
R
=V
RRMmax;
Tj= 165 °C; see Fig. 21 −−150 µA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
1997 Nov 24 4
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig. 25.
For more information please refer to the
“General Part of associated Handbook”
.
trr reverse recovery time when switched from
IF= 0.5 A to IR=1A;
measured at IR= 0.25 A;
see Fig. 27
BYV27-50 to 200 −−25 ns
BYV27-300 to 600 −−50 ns
Cddiode capacitance f = 1 MHz; VR=0;
see Figs 22, 23 and 24
BYV27-50 to 200 −100 −pF
BYV27-300 and 400 −80 −pF
BYV27-500 and 600 −65 −pF
maximum slope of reverse recovery
current when switched from
IF= 1 A to VR≥30 V
and dIF/dt = −1A/µs;
see Fig. 26
−− 4A/µs
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
Rth j-a thermal resistance from junction to ambient note 1 100 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dIR
dt
--------
1997 Nov 24 5
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
GRAPHICAL DATA
BYV27-50 to 200
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0 200
MGA849
100 T ( C)
o
tp
0
IF(AV)
(A) 1.6
1.2
0.8
0.4
2.0
20 15 10 lead length (mm)
BYV27-300 and 400
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
Fig.3 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0 200
MLC293
100 T ( C)
o
tp
0
IF(AV)
(A) 1.6
1.2
0.8
0.4
2.0
lead length 10 mm
Fig.4 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
BYV27-500 and 600
a = 1.42; VR=V
RRMmax;δ= 0.5.
Switched mode application.
handbook, halfpage
0 200
0
1
2
3
IF(AV)
(A)
100 Ttp (°C)
MGK648
lead length 10 mm
BYV27-50 to 200
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig. 25.
Switched mode application.
Fig.5 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0 200
0
MGA848
100
IF(AV)
(A)
T ( C)
amb o
1.6
1.2
0.8
0.4
2.0
1997 Nov 24 6
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
Fig.6 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYV27-300 and 400
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig. 25.
Switched mode application.
handbook, halfpage
0 200
0
0.8
0.4
1.6
MLC294
100
IF(AV)
(A)
T ( C)
o
1.2
amb
Fig.7 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
BYV27-500 and 600
a = 1.42; VR=V
RRMmax;δ= 0.5.
Device mounted as shown in Fig. 25.
Switched mode application.
handbook, halfpage
0 200
0
0.4
0.8
1.2
1.6
IF(AV)
(A)
100 Tamb (°C)
MGK649
BYV27-50 to 200
Ttp =85°C; Rth j-tp = 46 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
8
10 211010
2103104
MLC297
16
t (ms)
p
10 1
IFRM
(A)
4
12
20 δ = 0.05
0.1
0.2
0.5
1
1997 Nov 24 7
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
BYV27-300 and 400
Ttp =85°C; Rth j-tp = 46 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
8
10 211010
2103104
MLC299
16
t (ms)
p
10 1
IFRM
(A)
4
12
20
δ = 0.05
0.1
0.2
0.5
1
BYV27-500 and 600
Ttp =85°C; Rth j-tp = 46 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 600 V.
Fig.10 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
12
104
103
102
10110−1
10−2
MGK650
tp (ms)
IFRM
(A)
8
4
16
20
δ = 0.05
0.1
0.2
1
0.5
1997 Nov 24 8
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
BYV27-50 to 200
Tamb =60°C; Rth j-a = 100 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 200 V.
Fig.11 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
8
10 211010
2103104
MLC298
16
t (ms)
p
10 1
IFRM
(A)
4
12
δ = 0.05
0.1
0.2
0.5
1
BYV27-300 and 400
Tamb =60°C; Rth j-a = 100 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 400 V.
Fig.12 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
8
10 211010
2103104
MLC300
16
t (ms)
p
10 1
IFRM
(A)
4
12 δ = 0.05
0.1
0.2
0.5
1
1997 Nov 24 9
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
BYV27-500 and 600
Tamb =60°C; Rth j-a = 100 K/W.
VRRMmax during 1 −δ; curves include derating for Tj max at VRRM = 600 V.
Fig.13 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
0
12
104
103
102
10110−1
10−2
MGK651
tp (ms)
IFRM
(A)
8
4
16
20
δ = 0.05
0.1
1
0.5
0.2
BYV27-50 to 200
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.14 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
MGA870
2.4
0
1.6
1.2
0.8
0.4
2.0
P
(W)
I (A)
F(AV)
12
a = 3 2.5 21.57
1.42
BYV27-300 and 400
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
Fig.15 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
handbook, halfpage
0
MLC292
2.4
0
1.6
1.2
2.0
0.8
0.4
P
(W)
I (A)
F(AV)
12
a = 3 2.5 21.57
1.42
1997 Nov 24 10
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
Fig.16 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
BYV27-500 and 600
a=I
F(RMS)/IF(AV); VR=V
RRMmax;δ= 0.5.
handbook, halfpage
0
MGK652
2.0
0
1.2
0.8
0.4
1.6
P
(W)
IF(AV)(A)
12
2.5
2
1.57
1.42
a = 3
Solid line = VR.
Dotted line = VRRM;δ= 0.5.
Fig.17 Maximum permissible junction
temperature as a function of maximum
reverse voltage percentage.
handbook, halfpage
0 100
200
0
100
50 VR (%VRmax)
Tj
(°C)
MGK645
BYV27-50 to 200
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.18 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
02
6
0
2
4
MGA864
1
IF
(A)
V (V)
F
BYV27-300 and 400
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.19 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
02
6
0
2
4
MLC291
1
IF
(A)
V (V)
F
1997 Nov 24 11
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
BYV27-500 and 600
Dotted line: Tj= 175 °C.
Solid line: Tj=25°C.
Fig.20 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
02
6
0
2
4
MBH649
1
IF
(A)
V (V)
F
VR=V
RRMmax.
Fig.21 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
MGC550
0 100 200
103
102
10
1
(µA)
IR
Tj (°C)
BYV27-50 to 200
f = 1 MHz; Tj=25°C.
Fig.22 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MLC295
10 102103
1
102
10
V (V)
R
Cd
(pF)
BYV27-300 and 400
f = 1 MHz; Tj=25°C.
Fig.23 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
1
MLC296
10 102103
1
102
10
V (V)
R
Cd
(pF)
1997 Nov 24 12
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
Fig.24 Diode capacitance as a function of reverse
voltage; typical values.
BYV27-500 and 600
f = 1 MHz; Tj=25°C.
handbook, halfpage
1
MGK653
10 102103
1
102
10
VR (V)
Cd
(pF)
Fig.25 Device mounted on a printed-circuit board.
Dimensions in mm.
handbook, halfpage
MGA200
3
2
7
50
25
50
Fig.26 Reverse recovery definitions.
n
dbook, halfpage
10%
100%
dI
dt
t
trr
IF
IR
MGC499
F
dI
dt
R
1997 Nov 24 13
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
Fig.27 Test circuit and reverse recovery time waveform and definition.
Input impedance oscilloscope: 1 MΩ, 22 pF; tr≤7 ns.
Source impedance: 50 Ω; tr≤15 ns.
handbook, full pagewidth
10 Ω
1 Ω
50 Ω
25 V
DUT
MAM057
+trr
0.5
0
0.5
1.0
IF
(A)
IR
(A)
t
0.25
1997 Nov 24 14
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
Note
1. The marking band indicates the cathode.
SOD57 97-10-14
Hermetically sealed glass package; axial leaded; 2 leads SOD57
UNIT b
max.
mm 0.81
D
max. G
max.
284.573.81
L
min.
DIMENSIONS (mm are the original dimensions)
G
LD L
b
0 2.5 5 mm
scale
ka
(1)
1997 Nov 24 15
Philips Semiconductors Product specification
Ultra fast low-loss
controlled avalanche rectifiers BYV27 series
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors – a worldwide company
© Philips Electronics N.V. 1997 SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands 117027/1200/04/pp16 Date of release: 1997 Nov 24 Document order number: 9397 750 02663
