Supertex inc.
www.supertex.com
Supertex inc.
Doc. # DSFP-HV830
E072913
HV830
High Voltage EL Lamp Driver IC
Features
►Processed with HVCMOS® technology
►2.0 to 9.5V operating supply voltage
►DC to AC conversion
►200V peak-to-peak typical output voltage
►Large output load capability typically 50nF
►Permits the use of high-resistance elastomeric lamp
components
►Adjustable output lamp frequency to control lamp
color, lamp life, and power consumption
►Adjustable converter frequency to eliminate harmon-
ics and optimize power consumption
►Enable/disable function
►Low current draw under no load condition
►Very low standby current - 30nA typical
Applications
►Handheld personal computers
►Electronic personal organizers
►GPS units
►Pagers
►Cellular phones
►Portable instrumentation
General Description
The Supertex HV830 is a high-voltage driver designed for
driving EL lamps of up to 50nF. EL lamps greater than 50nF
can be driven for applications not requiring high brightness.
The input supply voltage range is from 2.0 to 9.5V. The device
uses a single inductor and a minimum number of passive
components. The nominal regulated output voltage that is
applied to the EL lamp is ±100V. The chip can be enabled
by connecting the resistors on the RSW-Osc and REL-Osc
pins to the VDD pin, and disabled when connected to GND.
The HV830 has two internal oscillators, a switching MOSFET
and a high-voltage EL lamp driver. The frequency of the
switching converter MOSFET is set by an external resistor
connected between the RSW-Osc and the VDD pins. The EL
lamp driver frequency is set by an external resistor connected
between the REL-Osc and the VDD pins. An external induc-
tor is connected between the LX and VDD pins. A 0.01µF to
0.1µF capacitor is connected between the CS pin and the
GND. The EL lamp is connected between the VA and VB pins.
The switching MOSFET charges the external inductor and
discharges it into the CS capacitor. The voltage at CS will
start to increase. Once the voltage at CS reaches a nominal
value of 100V, the switching MOSFET is turned OFF to con-
serve power. The output pins VA and VB are congured as
an H-bridge and are switched in opposite states to achieve
200V peak-to-peak across the EL lamp.
Block Diagram
Disable
GND
VDD
REL-Osc
VA
CS
LX
VB
RSW-Osc Q
Q
Q
Q
Output
Osc
VREF
Switch
Osc
C
+
_
Supertex inc.
www.supertex.com
2
Doc. # DSFP-HV830
E072913
HV830
Absolute Maximum Ratings
Parameter Value
Supply voltage, VDD -0.5 to +10V
Output voltage, VCS -0.5 to +120V
Power dissipation 400mW
Storage temperature -65OC to +150OC
Operating temperature -25OC to +85OC
Recommended Operating Conditions
Sym Parameter Min Typ Max Unit Conditions
VDD Supply voltage 2.0 - 9.5 V ---
fEL VA-B output drive frequency - - 1.5 KHz ---
TAOperating temperature -25 - +85 OC ---
DC Electrical Characteristics (VIN = 3.0V, RSW = 1.0MΩ, REL = 3.3MΩ, TA = 25°C unless otherwise specied)
Sym Parameter Min Typ Max Unit Conditions
RDS(ON) On resistance of switching transistor - 2.0 4.0 ΩI = 100mA
VCS Output voltage - regulation 90 100 110 V VDD = 2.0V to 9.5V
VA - VBOutput peak-to-peak voltage 180 200 220 V VDD = 2.0V to 9.5V
IDDQ Quiescent VDD current - disabled - 30 - nA RSW-Osc = Low
IDD VDD supply current - 100 150 µA VDD = 3.0V. See Fig.1
IIN Input current including inductor current - 35 40 mA VDD = 3.0V. See Fig.1
VCS Output voltage on VCS - 95 - V VDD = 3.0V. See Fig.1
fEL VA - VB output drive frequency 220 250 280 Hz VDD = 3.0V. See Fig.1
fSW Inductor switching frequency 55 65 75 KHz VDD = 3.0V. See Fig.1
D Switching transistor duty cycle - 88 - % ---
Pin Conguration
1
2
3
4
8
7
6
5
VDD
RSW-Osc
CS
LX
REL-Osc
VA
VB
GND
Product Marking
Y = Last Digit of Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
YWW
HV830
LLLL
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground. 8-Lead SOIC
8-Lead SOIC
(top view)
Package may or may not include the following marks: Si or
Ordering Information
Part Number Package Packing
HV830LG-G 8-Lead SOIC 2500/Reel
Typical Thermal Resistance
Package θja
8-Lead SOIC 101OC/W
-G denotes a lead (Pb)-free / RoHS compliant package
Supertex inc.
www.supertex.com
3
Doc. # DSFP-HV830
E072913
HV830
Fig.1: Test Circuit, VIN = 3.0V
VDD = VIN = 3.0V
ON = VDD
OFF = 0V
0.01µF
200V
0.1µF2
220µH1
BAS21LT1
1.0MΩ
3.3MΩ
3.0 square inch lamp.
1.0nF HV830
1
7
2
3
4
8
6
5
LX GND
VB
VA
REL-OscVDD
RSW-Osc
CS
The HV830 can be easily enabled and disabled via a logic
control signal on the RSW and REL resistors as shown in Fig.2
below. The control signal can be from a microprocessor. RSW
and REL are typically very high values, therefore, only 10’s
of microamperes will be drawn from the logic signal when it
is at a logic high (enable) state. When the microprocessor
signal is high the device is enabled and when the signal is
low, it is disabled.
Enable/Disable Conguration
Fig. 2: Enable/Disable Conguration
VIN = VDD
ON = VDD
OFF = 0V
CS
200V
4.7µF
15V
1.0nF
LX
BAS21LT1
RSW
REL
EL Lamp
+
-
Remote Enable
HV830
1
7
2
3
4
8
6
5
LX GND
VB
VA
REL-OscVDD
RSW-Osc
CS
Enable/Disable Table
RSW Resistor HV830
VDD Enable
0V Disable
Notes:
1. Murata part # LQH4N221K04 (DC resistance < 5.4Ω).
2. Larger values may be required depending upon supply impedance.
Supertex inc.
www.supertex.com
4
Doc. # DSFP-HV830
E072913
HV830
The HV830 can also be used for handheld devices operating
from a single cell 1.5V battery where a regulated voltage is
available. This is shown in Fig. 3. The regulated voltage can
be used to run the internal logic of the HV830. The amount of
current necessary to run the internal logic is typically 100µA
at a VDD of 3.0V. Therefore, the regulated voltage could easily
provide the current without being loaded down. The HV830
used in this conguration can also be enabled/disabled via
logic control signal on the RSW and REL resistors as shown
in Fig.2.
Split Supply Conguration Using a Single Cell (1.5V) Battery
Fig. 3 can also be used with high battery voltages, such as
12V, as long as the input voltage, VDD, to the HV830 device
is within its specications of 2.0V to 9.5V.
Split Supply Conguration for Battery Voltages of Higher than 9.5V
Fig. 3 Split Supply Conguration
VIN = Battery
Voltage
VDD = Regulated
Voltage
ON = VDD
OFF = 0V
CS
200V
0.1µF*
LX
BAS21LT1
RSW
REL
EL Lamp
+
–
Remote
Enable
1.0nF HV830
1
7
2
3
4
8
6
5
LX GND
VB
VA
REL-OscVDD
RSW-Osc
CS
* Larger values may be required depending upon supply impedance.
Supertex inc.
www.supertex.com
5
Doc. # DSFP-HV830
E072913
HV830
External Component Description
External
Component Description
Diode Fast reverse recovery diode, BAS21LT1 or equivalent.
CS
Capacitor 0.01µF to 0.1µF, 200V capacitor to GND is used to store the energy transferred from the inductor.
REL-Osc
The EL lamp frequency is controlled via an external REL resistor connected between REL-Osc and VDD
pins of the device. The lamp frequency increases as REL decreases. As the EL lamp frequency increases,
the amount of current drawn from the battery will increase and the output voltage VCS will decrease. The
color of the EL lamp is dependent upon its frequency.
A 3.3MΩ resistor would provide lamp frequency of 220 to 280Hz. Decreasing the REL-Osc by a factor of 2
will increase the lamp frequency by a factor of 2.
RSW-Osc
The switching frequency of the converter is controlled via an external resistor, RSW between the RSW-Osc
and VDD pins of the device. The switching frequency increases as RSW decreases. With a given inductor,
as the switching frequency increases, the amount of current drawn from the battery will decrease and the
output voltage, VCS, will also decrease.
CSW
Capacitor
A 1nF capacitor is recommended between the RSW-Osc pin and GND when a 0.01µF CS capacitor is
used. This capacitor is used to shunt any switching noise that may couple into the RSW-Osc pin. The CSW
capacitor may also be needed when driving large EL lamp due to increase in switching noise. A CSW larger
than 1.0nF is not recommended.
LX
Inductor
The inductor LX is used to boost the low input voltage by inductive yback. When the internal switch is
on, the inductor is being charged. When the internal switch is off, the charge stored in the inductor will
be transferred to the high voltage capacitor CS. The energy stored in the capacitor is connected to the
internal H-bridge and therefore to the EL lamp. In general, smaller value inductors, which can handle
more current, are more suitable to drive larger size lamps. As the inductor value decreases, the switching
frequency of the inductor (controlled by RSW) should be increased to avoid saturation.
220µH Murata inductors with 5.4Ω series DC resistance is typically recommended. For inductors with the
same inductance value but with lower series DC resistance, lower RSW value is needed to prevent high
current draw and inductor saturation.
Lamp
As the EL lamp size increases, more current will be drawn from the battery to maintain high voltage across
the EL lamp. The input power, (VIN x IIN), will also increase. If the input power is greater than the power dis-
sipation of the package (400mW), an external resistor in series with one side of the lamp is recommended
to help reduce the package power dissipation.
6
HV830
Doc. # DSFP-HV830
E072913
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
8-Lead SOIC (Narrow Body) Package Outline (LG)
4.90x3.90mm body, 1.75mm height (max), 1.27mm pitch
1
8
Seating
Plane
Gauge
Plane
L
L1
L2
EE1
D
eb
AA2
A1
Seating
Plane
A
A
Top View
Side View
View B View B
θ1
θ
Note 1
(Index Area
D/2 x E1/2)
View A-A
h
h
Note 1
Symbol A A1 A2 b D E E1 e h L L1 L2 θ θ1
Dimension
(mm)
MIN 1.35* 0.10 1.25 0.31 4.80* 5.80* 3.80*
1.27
BSC
0.25 0.40
1.04
REF
0.25
BSC
0O5O
NOM - - - - 4.90 6.00 3.90 - - - -
MAX 1.75 0.25 1.65* 0.51 5.00* 6.20* 4.00* 0.50 1.27 8O15O
JEDEC Registration MS-012, Variation AA, Issue E, Sept. 2005.
* This dimension is not specied in the JEDEC drawing.
Drawings are not to scale.
Supertex Doc. #: DSPD-8SOLGTG, Version I041309.
Note:
1. This chamfer feature is optional. A Pin 1 identier must be located in the index area indicated. The Pin 1 identier can be: a molded mark/identier;
an embedded metal marker; or a printed indicator.
