1
SEMICONDUCTORS
SUMMARY
Continuous drain source voltage VDS=60V
On-state resistance 550m
Nominal load current 1.6A
Clamping Energy 550mJ
DESCRIPTION
Self protected low side MOSFET. Monolithic over temperature, over current, over
voltage (active clamp) and ESD protected logic level power MOSFET intended as a
general purpose switch.
FEATURES
•High continuous current rating
•Logic level input
•Input protection (ESD)
•Thermal shutdown with auto restart
•Over load protection
•Short circuit protection with pulse start capability and auto restart
•Over voltage protection (active clamp)
•Load dump protection (actively protects load)
APPLICATIONS
•Especially suited for loads with a high
inrush current such as lamps and
motors
•All types of resistive, inductive and
capacitive loads in switching
applications
•␮C compatible power switch for 12V
and 24V DC applications and for 42V
Powernet
•Automotive rated
•Replaces electromechanical relays and
discrete circuits
BSP75G
DRAFT ISSUE C - NOVEMBER 2003
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET™
MOSFET
ADVANCE INFORMATION
SOT223
PACKAGE
PINOUT
DIAGRAM
FUNCTIONAL BLOCK DIAGRAM
BSP75G
SEMICONDUCTORS
DRAFT ISSUE C - NOVEMBER 2003
ADVANCE INFORMATION
2
PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R␪JA 50 °C/W
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Continuous drain-source voltage VDS 60 V
Drain-source voltage for short circuit protection VDS(SC) 36 V
Continuous input voltage VIN -0.2 ... +10 V
Peak input voltage VIN -0.2 ... +20 V
Operating temperature range Tj, -40 to +150 °C
Storage temperature range Tstg -55 to +150 °C
Power dissipation at TA=25°C PD2.5 W
Continuous drain current @ VIN=10V; TA=25°C 2ID1.6 A
Pulsed drain current @ VIN=10V IDM 3A
Unclamped single pulse inductive energy EAS 550 mJ
Load dump protection VLoadDump 80 V
Electrostatic discharge (Human Body Model) VESD 4000 V
NOTES
2For a device surface mounted on FR4 PCB measured at t ⱕ10s
ABSOLUTE MAXIMUM RATINGS
BSP75G
SEMICONDUCTORS
DRAFT ISSUE C - NOVEMBER 2003
ADVANCE INFORMATION
3
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-source clamp voltage VDS(AZ) 60 70 75 V ID=10mA
Off state drain current IDSS 0.1 3 ␮AV
DS=12V, VIN=0V
Off state drain current IDSS 315␮AV
DS=32V, VIN=0V
Input threshold voltage VIN(th) 1 2.1 2.5 V ID=10mA
Input current IIN 0.7 1.2 mA VIN=+5V
Input current IIN 1.5 2.7 mA VIN=+7V
Input current IIN 4 7 mA VIN=+10V
Static drain-source on-state resistance RDS(on) 520 675 m⍀VIN=5V, ID=0.7A
Static drain-source on-state resistance RDS(on) 385 550 m⍀VIN=10V, ID=0.7A
Continuous load current 2ID1.6 A VIN=10V
Continuous load current 2ID1AV
IN=5V
Current limit 3ID(LIM) 0.7 1.1 1.75 A VIN=5V, VDS>5V
Current limit 3ID(LIM) 234AV
IN=10V, VDS>5V
DYNAMIC
Turn-on time (VIN to 90% ID)t
on 420␮sR
L=22⍀,
VIN=0 to 10V,
VBB=12V
Turn-off time (VIN to 90% ID)t
off 10 20 ␮sR
L=22⍀,
VIN=10V to 0V,
VBB=12V
Slew rate on (70 to 50% VBB) -dVDS/dton 6.5 20 V/␮sR
L=22⍀,
VIN=0 to 10V,
VBB=12V
Slew rate off (50 to 70% VBB)DV
DS/dton 3.2 10 V/␮sR
L=22⍀,
VIN=10V to 0V,
VBB=12V
PROTECTION FUNCTIONS1
Required input voltage for over
temperature protection VPROT 4.5 V
Thermal overload trip temperature TJT 150 175 °C
Thermal hysteresis 10 °C
Unclamped single pulse inductive
energy Tj=25°C EAS 550 mJ ID(ISO)=0.7A,
VBB=32V
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
NOTES
1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous, repetitive operation.
2For a device surface mounted on FR4 PCB measured at tⱕ10s.
3The drain current is limited to a reduced value when Vds exceeds a safe value.
BSP75G
SEMICONDUCTORS
4
DRAFT ISSUE C - NOVEMBER 2003
Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
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Zetex Inc
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Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
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Telephone: (852) 26100 611
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For the latest product information, log on to www.zetex.com
© Zetex plc 2003
ADVANCE INFORMATION
DIM Millimeters DIM Millimeters
MIN MAX MIN MAX
Aᎏ1.80 D 6.30 6.70
A1 0.02 0.10 e 2.30 BASIC
A2 1.55 1.65 e1 4.60 BASIC
b 0.66 0.84 E 6.70 7.30
b2 2.90 3.10 E1 3.30 3.70
PACKAGE DIMENSIONS
PACKAGE OUTLINE