SIEMENS NPN Silicon AF Transistors Features @ For AF driver and output stages @ High collector current @ Low collector-emitter saturation voltage @ Complementary types: BCX 51 ... BCX 53 (PNP) BCX 54 ... BCX 56 VPS05162 Type Marking Ordering Code Pin Configuration | Package" (tape and reel) 1 2 3 BCX 54 BA Q62702-C954 B Cc E | SOT-89 BCX 54-10 BC Q62702-C 1861 BCX 54-16 BD Q62702-C1731 BCX 55 BE Q62702-C1729 BCX 55-10 BG Q62702-C1730 BCX 55-16 BM Q62702-C1903 BCX 56 BH Q62702-C1614 BCX 56-10 BK Q62702-C1635 BCX 56-16 BL Q62702-C 1613 1) For detailed intormation see chapter Package Outlines. Semiconductor Group 894 04.96 SIEMENS BCX 54... BCX 56 Maximum Ratings Parameter Symbol Values Unit BCX 54 |BCX55 |BCX 56 Collector-emitter voltage Vee 45 60 80 Vv Collector-base voltage Veso 45 60 100 Emitter-base voltage Veeo 5 5 5 Collector current Ic 1 A Peak collector current Tom 1.5 Base current Ip 100 mA Peak base current Tem 200 Total power dissipation, Ts = 130 C | Pia 1 Ww Junction temperature Ti 150 Cc Storage temperature range Tstg 65 ... + 150 Thermal Resistance Junction - ambient) Rinsa <75 K/W Junction - soldering point Rtrus < 20 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group B95 SIEMENS BCX 54 ... BCX 56 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. |typ. | max. DC characteristics Collector-emitter breakdown voltage Vier\ceo Vv Ic=10mA BCX 54 45 _ _ BCX 55 60 - - BCX 56 80 - - Collector-base breakdown voltage Vieryceo Ic = 100 pA BCX 54 45 - - BCX 55 60 ~ - BCX 56 100 |- - Emitter-base breakdown voltage Vereso | 5 - - fe =10pA Collector cutoff current Toso Ves = 30 V - - 100 {nA Vea = 30 V, Ta= 150C - - 20 pA Emitter cutoff current TB0 - - 20 nA Ves =4V DC current gain) hre - ic= 5MA, Vee=2V 25 - - Ic = 150 mA, Vce=2V BCX 54, BCX 55, BCX 56 40 - 250 BCX 54-10, BCX 55-10, BCX 56-10 63 100 160 BCX 54-16, BCX 55-16, BCX 56-16 100 160 | 250 Ic = 500 mA, Vee = 2 V 25 _ - Collector-emitter saturation voltage") Vecksa - - 0.5 V Te = 500 mA, Jn = 50 mA Base-emitter voltage) Vee - - 1 Ic = 500 mA, Vce = 2V AC characteristics Transition frequency f - 100 ~ MHz Ic = 50 mA, Vee = 10 V, f= 20 MHz ) Pulse test: 1s 300 ns, D= 2%. Semiconductor Group 896 SIEMENS BCX 54 ... BCX 56 Total power dissipation Pio = f (Ta*; Ts) Transition frequency ft = f (Jc) * Package mounted on epoxy Vee=10V BCX 54...56 EHP00444 2 103 MHz f f, 5 102 5 1 0.05 50 100 * 36150 100 5 10! 5 10? mA 103 ee ee k Permissible pulse load Prt ma/Pitoc =f (tp) Collector cutoff current /czo = f (7) Vca = 30 V $4...56 EHPO0447 104 nA Pee Ss CHES ae UT LTS 0 5 +1 10 107 1975 1* 10 10% s 10 0 50 100 = C:150 +}, y Semiconductor Group 897 SIEMENS BCX 54... BCX 56 Collector current Ic = f (Vee) Vee=2V 194 Bok 54 56 mA 10 0 02 04 06 OB 1.0V1.2 Yer Base-emitter saturation voltage Ic = f (Veesa) hre = 10 to4 EHP00450 mA Ie 105 5 102 10 10 0 02 04 06 O08 1.0V1.2 Yor tof Semiconductor Group Collector-emitter saturation voltage Ic = f (Veesa) hre = 10 104 mA BCX 54...56 0 0.2 0.4 0.6 V 0.8 Yo sat DC current gain fre = f (Ic) Voe=2V 103 BCX 54...56 EHPOO4S1 5 hee 10 107 10 510) 5102 ma 103 | 898