© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 12 1Publication Order Number:
MJ15023/D
MJ15023 (PNP),
MJ15025 (PNP)
Silicon Power Transistors
The MJ15023 and MJ15025 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
•High Safe Operating Area
•High DC Current Gain
•Complementary to MJ15022 (NPN), MJ15024 (NPN)
•These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MJ15023
MJ15025
VCEO 200
250
Vdc
Collector−Base Voltage
MJ15023
MJ15025
VCBO 350
400
Vdc
Emitter−Base Voltage VEBO 5 Vdc
Collector−Emitter Voltage VCEX 400 Vdc
Collector Current − Continuous (Note 1) IC16 Adc
Collector Current − Peak (Note 1) ICM 30 Adc
Base Current − Continuous IB5 Adc
Total Device Dissipation
@ TC = 25_C
Derate above 25_C
PD250
1.43 W
W/_C
Operating and Storage Junction
Temperature Range TJ, Tstg −65 to +200 _C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 0.70 _C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
16 AMPERES
SILICON POWER TRANSISTORS
200 − 250 VOLTS, 250 WATTS
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
MJ15023G TO−204
(Pb−Free) 100 Units / Tray
MJ1502xG
AYWW
MEX
TO−204 (TO−3)
CASE 1−07
STYLE 1
MJ1502x = Device Code
x = 3 or 5
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
MJ15025G TO−204
(Pb−Free) 100 Units / Tray
1
BASE
2
EMITTER
COLLECTOR
CASE
12
CASE
MJ15023 (PNP), MJ15025 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 100 mAdc, IB = 0)
MJ15023
MJ15025
VCEO(sus)
200
250 −
−
−
Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc)
MJ15023
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
MJ15025
ICEX
−
−
250
250
mAdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
MJ15023
(VCE = 200 Vdc, IB = 0)
MJ15025
ICEO
−
−
500
500
mAdc
Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0)
Both
IEBO
− 500
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non−repetitive))
(VCE = 80 Vdc, t = 0.5 s (non−repetitive))
IS/b 5
2−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
hFE 15
560
−
−
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat) −
−1.4
4.0
Vdc
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc) VBE(on) − 2.2 Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) fT4 − MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Cob − 600 pF
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
100
Figure 1. Active−Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.5 10 1 k
20
TC = 25°C
50 250
0.1
IC, COLLECTOR CURRENT (AMPS)
0.2
1.0
5.0
50
500100
10
20
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
MJ15023 (PNP), MJ15025 (PNP)
http://onsemi.com
3
fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)
Figure 2. Capacitances Figure 3. Current−Gain − Bandwidth Product
Figure 4. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.1 0.3 0.5
9
5
VCE = 4.0 V
8
2
1.0 5.0
0
1
3
4
7
6
2.0 10
4000
0.3
VR, REVERSE VOLTAGE (VOLTS)
50
C, CAPACITANCE (pF)
TJ = 25°C
10010
500
100
1000
300301.00.5
Figure 5. “On” Voltages
5.0
1.8
0.1
IC, COLLECTOR CURRENT (AMPS)
10
V, VOLTAGE (VOLTS)
TJ = 25°C
5.0
1.0
0.8
0.2
0
1.4
2.01.0
VCE(sat) @ IC/IB = 10
0.5
VBE(on) @ VCE = 4.0 V
IC, COLLECTOR CURRENT (AMPS)
200
hFE, DC CURRENT GAIN
100
2.0
5.0
10
20
50
Cob
TJ = 25°C
TJ = 100°C
TJ = 25°C
VCE = 10 V
fTest = 1 MHz
25°C
100°C
3000
0.2 10 205.02.01.00.5
Cib
100°C
TYPICAL CHARACTERISTICS
MJ15023 (PNP), MJ15025 (PNP)
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T− SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
UL
GB
V
H
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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Phone: 81−3−5817−1050
MJ15023/D
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